| 42.3: Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM‐OLED display SHK Park, M Ryu, CS Hwang, S Yang, C Byun, JI Lee, J Shin, SM Yoon, ... SID Symposium Digest of Technical Papers 39 (1), 629-632, 2008 | 668 | 2008 |
| 21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane DH Cho, S Yang, SHK Park, C Byun, SM Yoon, JI Lee, CS Hwang, ... SID Symposium Digest of Technical Papers 40 (1), 280-283, 2009 | 638 | 2009 |
| Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor H Oh, SM Yoon, MK Ryu, CS Hwang, S Yang, SHK Park Applied physics letters 97 (18), 2010 | 379 | 2010 |
| Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature DH Cho, S Yang, C Byun, J Shin, MK Ryu, SHK Park, CS Hwang, ... Applied Physics Letters 93 (14), 2008 | 173 | 2008 |
| High-mobility nonvolatile memory thin-film transistors with a ferroelectric polymer interfacing ZnO and pentacene channels KH Lee, G Lee, K Lee, MS Oh, S Im, SM Yoon Advanced Materials 21 (42), 4287-4291, 2009 | 137 | 2009 |
| Sb-Se-based phase-change memory device with lower power and higher speed operations SM Yoon, NY Lee, SO Ryu, KJ Choi, YS Park, SY Lee, BG Yu, MJ Kang, ... IEEE electron device letters 27 (6), 445-447, 2006 | 124 | 2006 |
| Fully transparent non‐volatile memory thin‐film transistors using an organic ferroelectric and oxide semiconductor below 200 C SM Yoon, S Yang, C Byun, SHK Park, DH Cho, SW Jung, OS Kwon, ... Advanced Functional Materials 20 (6), 921-926, 2010 | 114 | 2010 |
| Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor H Oh, SM Yoon, MK Ryu, CS Hwang, S Yang, SHK Park Applied Physics Letters 98 (3), 2011 | 105 | 2011 |
| The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly (vinylidene fluoride-trifluoroethylene) GG Lee, E Tokumitsu, SM Yoon, Y Fujisaki, JW Yoon, H Ishiwara Applied Physics Letters 99 (1), 2011 | 96 | 2011 |
| Ferroelectric-gate field effect transistor memories H Ishiwara, M Okuyama, S Sakai, SM Yoon Springer 131, 141-155, 2016 | 89 | 2016 |
| Channel protection layer effect on the performance of oxide TFTs SHK Park, DH Cho, CS Hwang, S Yang, MK Ryu, CW Byun, SM Yoon, ... Etri Journal 31 (6), 653-659, 2009 | 86 | 2009 |
| Effects of deposition temperature on the device characteristics of oxide thin-film transistors using In–Ga–Zn–O active channels prepared by atomic-layer deposition SM Yoon, NJ Seong, K Choi, GH Seo, WC Shin ACS applied materials & interfaces 9 (27), 22676-22684, 2017 | 77 | 2017 |
| Low-temperature processed flexible In–Ga–Zn–O thin-film transistors exhibiting high electrical performance S Yang, JY Bak, SM Yoon, MK Ryu, H Oh, CS Hwang, GH Kim, SHK Park, ... IEEE electron device letters 32 (12), 1692-1694, 2011 | 72 | 2011 |
| Polycrystalline silicon-germanium heating layer for phase-change memory applications SY Lee, KJ Choi, SO Ryu, SM Yoon, NY Lee, YS Park, SH Kim, SH Lee, ... Applied physics letters 89 (5), 2006 | 70 | 2006 |
| Impacts of HVACR temperature sensor offsets on building energy performance and occupant thermal comfort S Yoon, Y Yu, J Wang, P Wang Building Simulation 12, 259-271, 2019 | 65 | 2019 |
| Autoencoder-driven fault detection and diagnosis in building automation systems: Residual-based and latent space-based approaches Y Choi, S Yoon Building and Environment 203, 108066, 2021 | 64 | 2021 |
| Improvement in device performance of vertical thin-film transistors using atomic layer deposited IGZO channel and polyimide spacer YM Kim, HB Kang, GH Kim, CS Hwang, SM Yoon IEEE Electron Device Letters 38 (10), 1387-1389, 2017 | 63 | 2017 |
| Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly (ethylene naphthalate … MJ Park, DJ Yun, MK Ryu, JH Yang, JE Pi, OS Kwon, GH Kim, CS Hwang, ... Journal of Materials Chemistry C 3 (18), 4779-4786, 2015 | 63 | 2015 |
| Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films SM Yoon, KJ Choi, NY Lee, SY Lee, YS Park, BG Yu Applied surface science 254 (1), 316-320, 2007 | 62 | 2007 |
| Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer SW Jung, JS Choi, JB Koo, CW Park, BS Na, JY Oh, SC Lim, SS Lee, ... Organic Electronics 16, 46-53, 2015 | 61 | 2015 |
