| Structural, electrical, and Rashba properties of monolayer Janus ( =P, As, Sb, and Bi) S Babaee Touski, N Ghobadi Physical Review B 103 (16), 165404, 2021 | 43 | 2021 |
| Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties N Ghobadi, M Hosseini, SB Touski IEEE Transactions on Electron Devices 69 (2), 863-869, 2022 | 29 | 2022 |
| Substrate surface corrugation effects on the electronic transport in graphene nanoribbons S Babaee Touski, M Pourfath Applied Physics Letters 103 (14), 2013 | 27 | 2013 |
| Electronic and photocatalytic properties of Antimonene nanosheets A Kokabi, SB Touski Physica E: Low-dimensional Systems and Nanostructures 124, 114336, 2020 | 26 | 2020 |
| Vertical strain-induced modification of the electrical and spin properties of monolayer MoSi2X4 (X = N, P, As and Sb) SB Touski, N Ghobadi Journal of Physics D: Applied Physics 54 (48), 485302, 2021 | 24 | 2021 |
| A comparative study of substrates disorder on mobility in the Graphene nanoribbon: Charged impurity, surface optical phonon, surface roughness SB Touski, M Hosseini Physica E: Low-dimensional Systems and Nanostructures 116, 113763, 2020 | 24 | 2020 |
| Bipolar transistor based on graphane S Gharekhanlou, B and Tousaki, SB and Khorasani Journal of Physics: Conference Series 248, 012061, 2010 | 23 | 2010 |
| Electrical and electronic properties of strained mono-layer inte SB Touski, M Ariapour, M Hosseini Physica E: Low-dimensional Systems and Nanostructures 118, 113875, 2020 | 21 | 2020 |
| The electrical and spin properties of monolayer and bilayer Janus HfSSe under vertical electrical field N Ghobadi, SB Touski Journal of Physics: Condensed Matter 33 (8), 085502, 2020 | 19 | 2020 |
| Interplay between stacking order and in-plane strain on the electrical properties of bilayer antimonene SB Touski, N Ghobadi Physica E: Low-dimensional Systems and Nanostructures 126, 114407, 2021 | 18 | 2021 |
| Strain engineering of spin and Rashba splitting in group-III monochalcogenide MX (M= Ga, In and X= S, Se, Te) monolayer M Ariapour, SB Touski Journal of Magnetism and Magnetic Materials 510, 166922, 2020 | 17 | 2020 |
| Enhanced spin-flip scattering by surface roughness in and armchair nanoribbons SB Touski, R Roldán, M Pourfath, M Pilar Lopez-Sancho Physical Review B 95 (16), 165301, 2017 | 17 | 2017 |
| Tuning electronic properties of MSb (M= C, Si, Ge and Sn) monolayers by strain engineering A Rajabi-Maram, N Hasani, SB Touski Physica E: Low-dimensional Systems and Nanostructures 138, 115065, 2022 | 16 | 2022 |
| Effects of spin-orbit coupling on the electronic properties of the buckled III–V monolayers N Hasani, A Rajabi-Maram, SB Touski Journal of Magnetism and Magnetic Materials 543, 168638, 2022 | 15 | 2022 |
| Spin splitting and rashba effect at mono-layer gate in the presence of strain M Ariapour, SB Touski Materials Research Express 6 (7), 076402, 2019 | 14 | 2019 |
| Strain engineering of electronic and spin properties in SnX (X= P, As, Sb, Bi) monolayers N Hasani, A Rajabi-Maram, SB Touski Journal of Physics and Chemistry of Solids 174, 111131, 2023 | 11 | 2023 |
| Structural, electrical and optical properties of bilayer SiX (X= N, P, As and Sb) N Ghobadi, SB Touski Journal of Physics: Condensed Matter 33 (28), 285502, 2021 | 11 | 2021 |
| Electrical Properties of Double-Gate Field-Effect Transistor Based on MAN (M Ti, Zr, and Hf; A Si, Ge, and Sn) Monolayers N Hasani, M Shalchian, A Rajabi-Maram, SB Touski IEEE Transactions on Electron Devices, 2023 | 10 | 2023 |
| The effect of electron-electron interaction induced dephasing on electronic transport in graphene nanoribbons SS Kahnoj, SB Touski, M Pourfath Applied Physics Letters 105 (10), 2014 | 9 | 2014 |
| Spin relaxation in graphene nanoribbons in the presence of substrate surface roughness Z Chaghazardi, SB Touski, M Pourfath, R Faez Journal of Applied Physics 120 (5), 2016 | 8 | 2016 |
aLiReZa kOkAbIAssociate ProfessorVerified email at hut.ac.ir