Articles with public access mandates - Wenzhong Bao （包文中）Learn more
Not available anywhere: 49
Tunable SnSe2/WSe2 Heterostructure Tunneling Field Effect Transistor
X Yan, C Liu, C Li, W Bao, S Ding, DW Zhang, P Zhou
Small 13 (34), 1701478, 2017
Mandates: National Natural Science Foundation of China
Integrated In-Sensor Computing Optoelectronic Device for Environment-Adaptable Artificial Retina Perception Application
J Meng, T Wang, H Zhu, L Ji, W Bao, P Zhou, L Chen, QQ Sun, DW Zhang
Nano Letters 22 (1), 81-89, 2021
Mandates: National Natural Science Foundation of China
Atomic force microscopy studies on molybdenum disulfide flakes as sodium-ion anodes
SD Lacey, J Wan, AW Cresce, SM Russell, J Dai, W Bao, K Xu, L Hu
Nano letters 15 (2), 1018-1024, 2015
Mandates: US Department of Energy
High Performance Wafer Scale MoS2 Transistors toward Practical Application
H Xu, H Zhang, Z Guo, Y Shan, S Wu, J Wang, W Hu, H Liu, Z Sun, C Luo, ...
Small, 1803465, 2018
Mandates: National Natural Science Foundation of China
Metallic few-layered VSe 2 nanosheets: high two-dimensional conductivity for flexible in-plane solid-state supercapacitors
C Wang, X Wu, Y Ma, G Mu, Y Li, C Luo, H Xu, Y Zhang, J Yang, X Tang, ...
Journal of Materials Chemistry A 6 (18), 8299-8306, 2018
Mandates: National Natural Science Foundation of China
Flexible Boron Nitride-based Memristor for In-situ Digital and Analogue Neuromorphic Computing Applications
JL Meng, TY Wang, ZY He, H Zhu, L Ji, QQ Sun, SJ Ding, W Bao, P Zhou, ...
Materials Horizons, 2021
Mandates: National Natural Science Foundation of China
In Situ Transmission Electron Microscopy Observation of Sodiation–Desodiation in a Long Cycle, High-Capacity Reduced Graphene Oxide Sodium-Ion Battery Anode
J Wan, F Shen, W Luo, L Zhou, J Dai, X Han, W Bao, Y Xu, ...
Chemistry of Materials 28 (18), 6528-6535, 2016
Mandates: US National Science Foundation
12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture
Y Xia, X Chen, J Wei, S Wang, S Chen, S Wu, M Ji, Z Sun, Z Xu, W Bao, ...
Nature Materials 22 (11), 1324-1331, 2023
Mandates: National Natural Science Foundation of China
High-Performance WSe2 Photodetector Based on a Laser-Induced p–n Junction
J Chen, Q Wang, Y Sheng, G Cao, P Yang, Y Shan, F Liao, Z Muhammad, ...
ACS applied materials & interfaces 11 (46), 43330-43336, 2019
Mandates: National Natural Science Foundation of China
Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide
L Tong, J Wan, K Xiao, J Liu, J Ma, X Guo, L Zhou, X Chen, Y Xia, S Dai, ...
Nature Electronics 6 (1), 37-44, 2023
Mandates: National Natural Science Foundation of China
Energy-efficient flexible photoelectric device with 2D/0D hybrid structure for bio-inspired artificial heterosynapse application
JL Meng, TY Wang, L Chen, QQ Sun, H Zhu, L Ji, SJ Ding, WZ Bao, ...
Nano Energy 83, 105815, 2021
Mandates: National Natural Science Foundation of China
WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment
C Li, X Yan, X Song, W Bao, S Ding, DW Zhang, P Zhou
Nanotechnology 28 (41), 415201, 2017
Mandates: National Natural Science Foundation of China
Interface Engineering of Silicon/Carbon Thin-Film Anodes for High-Rate Lithium-Ion Batteries
L Tong, P Wang, W Fang, X Guo, W Bao, Y Yang, S Shen, F Qiu
ACS Applied Materials & Interfaces 12 (26), 29242-29252, 2020
Mandates: National Natural Science Foundation of China
Wafer-scale transferred multilayer MoS2 for high performance field effect transistors
S Zhang, H Xu, F Liao, Y Sun, K Ba, Z Sun, ZJ Qiu, Z Xu, H Zhu, L Chen, ...
Nanotechnology 30 (17), 174002, 2019
Mandates: National Natural Science Foundation of China
Charge‐Trap Memory Based on Hybrid 0D Quantum Dot–2D WSe2 Structure
X Hou, H Zhang, C Liu, S Ding, W Bao, DW Zhang, P Zhou
Small 14 (20), 1800319, 2018
Mandates: National Natural Science Foundation of China
Room-Temperature Fabrication of High-Performance Amorphous In–Ga–Zn–O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper
H Ning, Y Zeng, Y Kuang, Z Zheng, P Zhou, R Yao, H Zhang, W Bao, ...
ACS Applied Materials & Interfaces 9 (33), 27792-27800, 2017
Mandates: National Natural Science Foundation of China
Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors
X Wang, X Chen, J Ma, S Gou, X Guo, L Tong, J Zhu, Y Xia, D Wang, ...
Advanced Materials 34 (48), 2202472, 2022
Mandates: National Natural Science Foundation of China
Multifunctional MoS2 Transistors with Electrolyte Gel Gating
B Wu, X Wang, H Tang, W Jiang, Y Chen, Z Wang, Z Cui, T Lin, H Shen, ...
Small 16 (22), 2000420, 2020
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Low sub-threshold swing realization with contacts of graphene/h-BN/MoS2 heterostructures in MoS2 transistors
C Li, X Yan, W Bao, S Ding, DW Zhang, P Zhou
Applied Physics Letters 111 (19), 193502, 2017
Mandates: National Natural Science Foundation of China
MoS2/Silicon-on-Insulator Heterojunction Field-Effect-Transistor for High-Performance Photodetection
J Deng, Z Guo, Y Zhang, X Cao, S Zhang, Y Sheng, H Xu, W Bao, J Wan
IEEE Electron Device Letters 40 (3), 423-426, 2019
Mandates: National Natural Science Foundation of China
Publication and funding information is determined automatically by a computer program