| Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics MS Choi, D Qu, D Lee, X Liu, K Watanabe, T Taniguchi, WJ Yoo ACS nano 8 (9), 9332-9340, 2014 | 594 | 2014 |
| Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo Nature communications 6 (1), 6564, 2015 | 380 | 2015 |
| P-type polar transition of chemically doped multilayer MoS2 transistor X Liu, D Qu, J Ryu, F Ahmed, Z Yang, D Lee, WJ Yoo arXiv preprint arXiv:1604.08162, 2015 | 261 | 2015 |
| Carrier‐Type Modulation and Mobility Improvement of Thin MoTe2 D Qu, X Liu, M Huang, C Lee, F Ahmed, H Kim, RS Ruoff, J Hone, WJ Yoo Advanced Materials 29 (39), 1606433, 2017 | 208 | 2017 |
| Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni (111) foil M Huang, PV Bakharev, ZJ Wang, M Biswal, Z Yang, S Jin, B Wang, ... Nature nanotechnology 15 (4), 289-295, 2020 | 199 | 2020 |
| Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction X Liu, D Qu, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ... ACS nano 11 (9), 9143-9150, 2017 | 197 | 2017 |
| Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil M Huang, M Biswal, HJ Park, S Jin, D Qu, S Hong, Z Zhu, L Qiu, D Luo, ... Acs Nano 12 (6), 6117-6127, 2018 | 166 | 2018 |
| Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors HM Li, DY Lee, MS Choi, D Qu, X Liu, CH Ra, WJ Yoo Scientific reports 4 (1), 4041, 2014 | 147 | 2014 |
| Controlled folding of single crystal graphene B Wang, M Huang, NY Kim, BV Cunning, Y Huang, D Qu, X Chen, S Jin, ... Nano letters 17 (3), 1467-1473, 2017 | 103 | 2017 |
| Effects of plasma treatment on surface properties of ultrathin layered MoS2 S Kim, MS Choi, D Qu, CH Ra, X Liu, M Kim, YJ Song, WJ Yoo 2D Materials 3 (3), 035002, 2016 | 89 | 2016 |
| High electric field carrier transport and power dissipation in multilayer black phosphorus field effect transistor with dielectric engineering F Ahmed, YD Kim, MS Choi, X Liu, D Qu, Z Yang, J Hu, IP Herman, ... Advanced Functional Materials 27 (4), 1604025, 2017 | 62 | 2017 |
| Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance X Liu, D Qu, Y Yuan, J Sun, WJ Yoo ACS applied materials & interfaces 12 (23), 26586-26592, 2020 | 41 | 2020 |
| Self-screened high performance multi-layer MoS 2 transistor formed by using a bottom graphene electrode D Qu, X Liu, F Ahmed, D Lee, WJ Yoo Nanoscale 7 (45), 19273-19281, 2015 | 37 | 2015 |
| High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions X Liu, Y Pan, J Yang, D Qu, H Li, WJ Yoo, J Sun Applied Physics Letters 118 (23), 2021 | 32 | 2021 |
| Charge Density Depinning in Defective MoTe2 Transistor by Oxygen Intercalation X Liu, D Qu, L Wang, M Huang, Y Yuan, P Chen, Y Qu, J Sun, WJ Yoo Advanced Functional Materials 30 (50), 2004880, 2020 | 28 | 2020 |
| Ambipolar MoS2 Field‐Effect Transistor by Spatially Controlled Chemical Doping X Liu, Y Yuan, D Qu, J Sun physica status solidi (RRL)–Rapid Research Letters 13 (9), 1900208, 2019 | 20 | 2019 |
| Homogeneous molybdenum disulfide tunnel diode formed via chemical doping X Liu, D Qu, MS Choi, C Lee, H Kim, WJ Yoo Applied Physics Letters 112 (18), 2018 | 15 | 2018 |
| Gate-controlled Schottky barrier modulation for superior photoresponse of MoS2 field effect transistor HM Li, DY Lee, MS Choi, DS Qu, XC Liu, CH Ra, WJ Yoo 2013 IEEE International Electron Devices Meeting, 19.6. 1-19.6. 4, 2013 | 4 | 2013 |
| High performance WSe X Liu, Y Pan, J Yang, D Qu, H Li, WJ Yoo, J Sun Appl. Phys. Lett 118 (23), 2021 | 1 | 2021 |
| Effects of plasma treatment on surface properties of 2D tungsten diselenide I Moon, S Lee, D Qu, C Kim, WJ Yoo APS March Meeting Abstracts 2018, Y37. 007, 2018 | | 2018 |
Won Jong YooProfessor of Sungkyunkwan UniversityVerified email at skku.edu