| Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ... Nature 604 (7904), 65-71, 2022 | 221 | 2022 |
| BTI analysis tool—Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation N Parihar, N Goel, S Mukhopadhyay, S Mahapatra IEEE Transactions on Electron Devices 65 (2), 392-403, 2017 | 118 | 2017 |
| A review of NBTI mechanisms and models S Mahapatra, N Parihar Microelectronics Reliability 81, 127-135, 2018 | 76 | 2018 |
| Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC–AC experimental conditions N Parihar, U Sharma, RG Southwick, M Wang, JH Stathis, S Mahapatra IEEE Transactions on Electron Devices 65 (1), 23-30, 2017 | 71 | 2017 |
| A modeling framework for NBTI degradation under dynamic voltage and frequency scaling N Parihar, N Goel, A Chaudhary, S Mahapatra IEEE Transactions on Electron Devices 63 (3), 946-953, 2016 | 66 | 2016 |
| A 3-D TCAD framework for NBTI—Part I: Implementation details and FinFET channel material impact R Tiwari, N Parihar, K Thakor, HY Wong, S Motzny, M Choi, V Moroz, ... IEEE Transactions on Electron Devices 66 (5), 2086-2092, 2019 | 50 | 2019 |
| Modeling of NBTI kinetics in RMG Si and SiGe FinFETs, part-I: DC stress and recovery N Parihar, RG Southwick, M Wang, JH Stathis, S Mahapatra IEEE Transactions on Electron Devices 65 (5), 1699-1706, 2018 | 50 | 2018 |
| Aging-aware voltage scaling VM Van Santen, H Amrouch, N Parihar, S Mahapatra, J Henkel 2016 Design, Automation & Test in Europe Conference & Exhibition (DATE), 576-581, 2016 | 49 | 2016 |
| Modeling of NBTI using BAT framework: DC-AC stress-recovery kinetics, material, and process dependence S Mahapatra, N Parihar IEEE Transactions on Device and Materials Reliability 20 (1), 4-23, 2020 | 37 | 2020 |
| A 3-D TCAD framework for NBTI, Part-II: Impact of mechanical strain, quantum effects, and FinFET dimension scaling R Tiwari, N Parihar, K Thakor, HY Wong, S Motzny, M Choi, V Moroz, ... IEEE Transactions on Electron Devices 66 (5), 2093-2099, 2019 | 34 | 2019 |
| Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs N Parihar, U Sharma, S Mukhopadhyay, N Goel, A Chaudhary, R Rao, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-1.1-XT-1.11, 2017 | 34 | 2017 |
| Device to circuit framework for activity-dependent nbti aging in digital circuits A Thirunavukkarasu, H Amrouch, J Joe, N Goel, N Parihar, S Mishra, ... IEEE Transactions on Electron Devices 66 (1), 316-323, 2018 | 32 | 2018 |
| Consistency of the two component composite modeling framework for NBTI in large and small area p-MOSFETs A Chaudhary, B Fernandez, N Parihar, S Mahapatra IEEE Transactions on Electron Devices 64 (1), 256-263, 2016 | 30 | 2016 |
| Modeling of NBTI kinetics in replacement metal gate Si and SiGe FinFETs—Part-II: AC stress and recovery N Parihar, RG Southwick, M Wang, JH Stathis, S Mahapatra IEEE Transactions on Electron Devices 65 (5), 1707-1713, 2018 | 28 | 2018 |
| Modeling of DC-AC NBTI stress-recovery time kinetics in P-channel planar bulk and FDSOI MOSFETs and FinFETs N Choudhury, N Parihar, N Goel, A Thirunavukkarasu, S Mahapatra IEEE Journal of the Electron Devices Society 8, 1281-1288, 2020 | 27 | 2020 |
| 3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters A Vandooren, Z Wu, N Parihar, J Franco, B Parvais, P Matagne, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 25 | 2020 |
| Key parameters driving transistor degradation in advanced strained SiGe channels V Huard, C Ndiaye, M Arabi, N Parihar, X Federspiel, S Mhira, ... 2018 IEEE International Reliability Physics Symposium (IRPS), P-TX. 4-1-P-TX …, 2018 | 23 | 2018 |
| Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs N Parihar, RG Southwick, U Sharma, M Wang, JH Stathis, S Mahapatra 2017 IEEE International Reliability Physics Symposium (IRPS), 2D-4.1-2D-4.7, 2017 | 22 | 2017 |
| A physical model for bulk gate insulator trap generation during bias-temperature stress in differently processed p-channel FETs T Samadder, N Choudhury, S Kumar, D Kochar, N Parihar, S Mahapatra IEEE Transactions on Electron Devices 68 (2), 485-490, 2021 | 21 | 2021 |
| A stochastic framework for the time kinetics of interface and bulk oxide traps for BTI, SILC, and TDDB in MOSFETs S Kumar, R Anandkrishnan, N Parihar, S Mahapatra IEEE Transactions on Electron Devices 67 (11), 4741-4748, 2020 | 21 | 2020 |
Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)Verified email at ee.iitb.ac.in