| Local electronic properties of corrugated silicene phases D Chiappe, C Grazianetti, G Tallarida, M Fanciulli, A Molle Advanced Materials 24 (37), 5088-5093, 2012 | 348 | 2012 |
| Hindering the oxidation of silicene with non‐reactive encapsulation A Molle, C Grazianetti, D Chiappe, E Cinquanta, E Cianci, G Tallarida, ... Advanced Functional Materials 23 (35), 4340-4344, 2013 | 222 | 2013 |
| In situ chemical and structural investigations of the oxidation of Ge (001) substrates by atomic oxygen A Molle, MNK Bhuiyan, G Tallarida, M Fanciulli Applied physics letters 89 (8), 2006 | 164 | 2006 |
| ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions E Guziewicz, M Godlewski, T Krajewski, Ł Wachnicki, A Szczepanik, ... Journal of Applied Physics 105 (12), 2009 | 147 | 2009 |
| Atomic-layer deposition of Lu2O3 G Scarel, E Bonera, C Wiemer, G Tallarida, S Spiga, M Fanciulli, ... Applied Physics Letters 85 (4), 630-632, 2004 | 134 | 2004 |
| On the correlation between surface roughness and inversion layer mobility in Si-MOSFETs A Pirovano, AL Lacaita, G Ghidini, G Tallarida IEEE Electron Device Letters 21 (1), 34-36, 2000 | 91 | 2000 |
| Formation and disruption of conductive filaments in a HfO2/TiN structure S Brivio, G Tallarida, E Cianci, S Spiga Nanotechnology 25 (38), 385705, 2014 | 87 | 2014 |
| Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications E Katsia, N Huby, G Tallarida, B Kutrzeba-Kotowska, M Perego, S Ferrari, ... APPLIED PHYSICS LETTERS 94 (14), 143501-143504, 2009 | 87 | 2009 |
| Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: A correlation between off-current and transconductance variations G Fortunato, A Pecora, G Tallarida, L Mariucci, C Reita, P Migliorato IEEE transactions on electron devices 41 (3), 340-346, 1994 | 82 | 1994 |
| Thermal conductivity of SiO2 films by scanning thermal microscopy S Callard, G Tallarida, A Borghesi, L Zanotti Journal of non-crystalline solids 245 (1-3), 203-209, 1999 | 81 | 1999 |
| Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition S Spiga, A Lamperti, C Wiemer, M Perego, E Cianci, G Tallarida, HL Lu, ... Microelectronic Engineering 85 (12), 2414-2419, 2008 | 78 | 2008 |
| Numerical analysis of poly-TFTs under off conditions L Colalongo, M Valdinoci, G Baccarani, P Migliorato, G Tallarida, C Reita Solid-State Electronics 41 (4), 627-633, 1997 | 76 | 1997 |
| Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy S Kremmer, H Wurmbauer, C Teichert, G Tallarida, S Spiga, C Wiemer, ... Journal of applied physics 97 (7), 2005 | 65 | 2005 |
| Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge S Spiga, C Wiemer, G Tallarida, G Scarel, S Ferrari, G Seguini, M Fanciulli Applied Physics Letters 87 (11), 2005 | 62 | 2005 |
| Anomalous off-current mechanisms in n-channel poly-Si thin film transistors P Migliorato, C Reita, G Tallarida, M Quinn, G Fortunato Solid-State Electronics 38 (12), 2075-2079, 1995 | 62 | 1995 |
| Al2O3 as gate dielectric for organic transistors: Charge transport phenomena in poly-(3-hexylthiophene) based devices L Fumagalli, D Natali, M Sampietro, E Peron, F Perissinotti, G Tallarida, ... Organic Electronics 9 (2), 198-208, 2008 | 60 | 2008 |
| Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2 G Seguini, JL Curi, S Spiga, G Tallarida, C Wiemer, M Perego Nanotechnology 25 (49), 495603, 2014 | 58 | 2014 |
| New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices N Huby, G Tallarida, M Kutrzeba, S Ferrari, E Guziewicz, M Godlewski Microelectronic Engineering 85 (12), 2442-2444, 2008 | 58 | 2008 |
| Vertically stacked non-volatile memory devices–material considerations M Godlewski, E Guziewicz, J Szade, A Wójcik-Głodowska, T Krajewski, ... Microelectronic Engineering 85 (12), 2434-2438, 2008 | 52 | 2008 |
| Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd2O3 films on Ge (001) substrates A Molle, C Wiemer, MNK Bhuiyan, G Tallarida, M Fanciulli, G Pavia Applied physics letters 90 (19), 2007 | 50 | 2007 |
Marco FanciulliProfessor of Condensed Matter Physics, University of Milano BicoccaVerified email at unimib.it