Anderson Janotti

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Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraVerified email at mrl.ucsb.edu
Joel B VarleyLawrence Livermore National LaboratoryVerified email at llnl.gov
John L LyonsCenter for Computational Materials Science, US Naval Research LaboratoryVerified email at nrl.navy.mil
Suhuai WeiEastern Institute of Technology, Ningbo, ChinaVerified email at eitech.edu.cn
Justin WeberComputational Materials Science, Intel CorporationVerified email at intel.com
Burak HimmetogluOptumVerified email at optum.com
Lars BjaalieArundo AnalyticsVerified email at arundo.com
Matthias SchefflerDirector of NOMAD Laboratory at FHI of Max-Planck-GesellschaftVerified email at fhi-berlin.mpg.de
Patrick RinkeProfessor at Technical University Munich, GermanyVerified email at tum.de
Minseok ChoiInha UniversityVerified email at inha.ac.kr
Karthik KrishnaswamyIntel CorporationVerified email at intel.com
SB Zhang (Shengbai Zhang)Rensselaer Polytechnic InstituteVerified email at rpi.edu
Hartwin PeelaersUniversity of KansasVerified email at ku.edu
Sukit LimpijumnongInstitute for the Promotion of teaching Science and TechnologyVerified email at sut.ac.th
Qimin YanAssociate Professor, Department of Physics, Northeastern UniversityVerified email at northeastern.edu
Dr. rer. nat. André SchleifeUniversity of Illinois at Urbana-ChampaignVerified email at illinois.edu
Pakpoom ReunchanDepartment of Physics, Faculty of Science, Kasetsart UniversityVerified email at ku.ac.th
Antonio Jose Roque da SilvaInstituto de Física - Universidade de São PauloVerified email at if.usp.br
Ronaldo MotaCNPqVerified email at pq.cnpq.br
Audrius AlkauskasCenter for Physical Sciences and Technology (FTMC), Vilnius, LithuaniaVerified email at ftmc.lt

Anderson Janotti

University of Delaware

Verified email at udel.edu - Homepage

Electronic Structure Theory Semiconductor Physics


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Fundamentals of zinc oxide as a semiconductor A Janotti, CG Van de Walle Reports on progress in physics 72 (12), 126501, 2009	4644	2009
Native point defects in ZnO A Janotti, CG Van de Walle Physical Review B—Condensed Matter and Materials Physics 76 (16), 165202, 2007	3364	2007
First-principles calculations for point defects in solids C Freysoldt, B Grabowski, T Hickel, J Neugebauer, G Kresse, A Janotti, ... Reviews of modern physics 86 (1), 253-305, 2014	2742	2014
Oxygen vacancies in ZnO A Janotti, CG Van de Walle Applied Physics Letters 87 (12), 2005	1959	2005
Oxygen vacancies and donor impurities in β-Ga2O3 JB Varley, JR Weber, A Janotti, CG Van de Walle Applied physics letters 97 (14), 2010	1106	2010
Quantum computing with defects JR Weber, WF Koehl, JB Varley, A Janotti, BB Buckley, CG Van de Walle, ... Proceedings of the National Academy of Sciences 107 (19), 8513-8518, 2010	1000	2010
Hydrogen multicentre bonds A Janotti, CG Van de Walle Nature materials 6 (1), 44-47, 2007	900	2007
Carbon impurities and the yellow luminescence in GaN JL Lyons, A Janotti, CG Van de Walle Applied Physics Letters 97 (15), 2010	739	2010
Hybrid functional studies of the oxygen vacancy in A Janotti, JB Varley, P Rinke, N Umezawa, G Kresse, CG Van de Walle Physical Review B—Condensed Matter and Materials Physics 81 (8), 085212, 2010	699	2010
Role of self-trapping in luminescence and -type conductivity of wide-band-gap oxides JB Varley, A Janotti, C Franchini, CG Van de Walle Physical Review B—Condensed Matter and Materials Physics 85 (8), 081109, 2012	628	2012
Direct View at Excess Electrons in Rutile and Anatase M Setvin, C Franchini, X Hao, M Schmid, A Janotti, M Kaltak, ... Physical review letters 113 (8), 086402, 2014	491	2014
Sources of Electrical Conductivity in AK Singh, A Janotti, M Scheffler, CG Van de Walle Physical review letters 101 (5), 055502, 2008	488	2008
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN JL Lyons, A Janotti, CG Van de Walle Physical Review B 89 (3), 035204, 2014	484	2014
Why nitrogen cannot lead to p-type conductivity in ZnO JL Lyons, A Janotti, CG Van de Walle Applied Physics Letters 95 (25), 2009	473	2009
New insights into the role of native point defects in ZnO A Janotti, CG Van de Walle Journal of Crystal Growth 287 (1), 58-65, 2006	469	2006
Effects of cation states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors A Janotti, D Segev, CG Van de Walle Physical Review B—Condensed Matter and Materials Physics 74 (4), 045202, 2006	422	2006
Hydrogenated cation vacancies in semiconducting oxides JB Varley, H Peelaers, A Janotti, CG Van de Walle Journal of Physics: Condensed Matter 23 (33), 334212, 2011	405	2011
Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs A Janotti, SH Wei, SB Zhang Physical Review B 65 (11), 115203, 2002	324	2002
Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces P Moetakef, TA Cain, DG Ouellette, JY Zhang, DO Klenov, A Janotti, ... Applied Physics Letters 99 (23), 2011	319	2011
Shallow versus deep nature of Mg acceptors in nitride semiconductors JL Lyons, A Janotti, CG Van de Walle Physical review letters 108 (15), 156403, 2012	307	2012

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