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Spyridon Pavlidis
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Size‐scalable and high‐density liquid‐metal‐based soft electronic passive components and circuits using soft lithography
M Kim, H Alrowais, S Pavlidis, O Brand
Advanced Functional Materials 27 (3), 1604466, 2017
1412017
Aerosol jet printing for 3-D multilayer passive microwave circuitry
F Cai, S Pavlidis, J Papapolymerou, YH Chang, K Wang, C Zhang, ...
European Microwave Conference (EuMC), 2014 44th, 512-515, 2014
882014
High resolution aerosol jet printing of D-band printed transmission lines on flexible LCP substrate
F Cai, Y Chang, K Wang, WT Khan, S Pavlidis, J Papapolymerou
2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-3, 2014
722014
Characterization of AlGaN/GaN HEMTs using gate resistance thermometry
G Pavlidis, S Pavlidis, ER Heller, EA Moore, R Vetury, S Graham
IEEE Transactions on Electron Devices 64 (1), 78-83, 2016
592016
High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
P Reddy, M Hayden Breckenridge, Q Guo, A Klump, D Khachariya, ...
Applied Physics Letters 116 (8), 2020
482020
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
MH Breckenridge, P Bagheri, Q Guo, B Sarkar, D Khachariya, S Pavlidis, ...
Applied Physics Letters 118 (11), 2021
322021
Record> 10 MV/cm mesa breakdown fields in Al0. 85Ga0. 15N/Al0. 6Ga0. 4N high electron mobility transistors on native AlN substrates
D Khachariya, S Mita, P Reddy, S Dangi, JH Dycus, P Bagheri, ...
Applied Physics Letters 120 (17), 2022
262022
Direct correlation between potentiometric and impedance biosensing of antibody-antigen interactions using an integrated system
MY Tsai, N Creedon, E Brightbill, S Pavlidis, B Brown, DW Gray, ...
Applied Physics Letters 111 (7), 2017
202017
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
D Khachariya, S Stein, W Mecouch, MH Breckenridge, S Rathkanthiwar, ...
Applied Physics Express 15 (10), 101004, 2022
192022
Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN
P Reddy, D Khachariya, W Mecouch, MH Breckenridge, P Bagheri, ...
Applied Physics Letters 119 (18), 2021
192021
Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN
D Khachariya, D Szymanski, R Sengupta, P Reddy, E Kohn, Z Sitar, ...
Journal of Applied Physics 128 (6), 2020
182020
Investigation of surface roughness effects for D-band SIW transmission lines on LCP substrate
S Li, M Yi, S Pavlidis, H Yu, M Swaminathan, J Papapolymerou
2017 IEEE Radio and Wireless Symposium (RWS), 121-124, 2017
172017
Role of polarity in SiN on Al/GaN and the pathway to stable contacts
P Reddy, D Khachariya, D Szymanski, MH Breckenridge, B Sarkar, ...
Semiconductor Science and Technology 35 (5), 055007, 2020
142020
Integrated microfluidic cooling for GaN devices on multilayer organic LCP substrate
OL Chlieh, CAD Morcillo, S Pavlidis, WT Khan, J Papapolymerou
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-4, 2013
142013
A 5.4 W X-band gallium nitride (GaN) power amplifier in an encapsulated organic package
S Pavlidis, AÇ Ulusoy, J Papapolymerou
2015 European Microwave Conference (EuMC), 789-792, 2015
122015
An X-band GaN HEMT hybrid power amplifier with low-loss Wilkinson division on AlN substrate
GC Barisich, S Pavlidis, CAD Morcillo, OL Chlieh, J Papapolymerou, ...
2013 IEEE International Conference on Microwaves, Communications, Antennas …, 2013
122013
Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
P Reddy, W Mecouch, M Hayden Breckenridge, D Khachariya, P Bagheri, ...
physica status solidi (RRL)–Rapid Research Letters 16 (6), 2100619, 2022
102022
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
S Rathkanthiwar, P Bagheri, D Khachariya, S Mita, S Pavlidis, P Reddy, ...
Applied Physics Express 15 (5), 051003, 2022
102022
Encapsulated organic package technology for wideband integration of heterogeneous MMICs
S Pavlidis, G Alexopoulos, AÇ Ulusoy, MK Cho, J Papapolymerou
IEEE Transactions on Microwave Theory and Techniques 65 (2), 438-448, 2016
102016
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
D Szymanski, D Khachariya, TB Eldred, P Bagheri, S Washiyama, ...
Journal of Applied Physics 131 (1), 2022
92022
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