| High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium L Meng, Z Feng, AFMAU Bhuiyan, H Zhao Crystal Growth & Design 22 (6), 3896-3904, 2022 | 79 | 2022 |
| Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao APL Materials 9 (10), 2021 | 52 | 2021 |
| Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage S Sharma, L Meng, AFMAU Bhuiyan, Z Feng, D Eason, H Zhao, ... IEEE Electron Device Letters 43 (12), 2029-2032, 2022 | 45 | 2022 |
| Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX CN Saha, A Vaidya, AFM Bhuiyan, L Meng, S Sharma, H Zhao, ... Applied Physics Letters 122 (18), 2023 | 40 | 2023 |
| MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films AFMAU Bhuiyan, Z Feng, L Meng, H Zhao Journal of Materials Research 36 (23), 4804-4815, 2021 | 28 | 2021 |
| Schottky diode characteristics on high-growth rate LPCVD β-Ga2O3 films on (010) and (001) Ga2O3 substrates S Saha, L Meng, Z Feng, AFM Anhar Uddin Bhuiyan, H Zhao, U Singisetti Applied Physics Letters 120 (12), 2022 | 26 | 2022 |
| Si doping in MOCVD grown (010) β-(AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, L Meng, A Fiedler, HL Huang, AT Neal, ... Journal of Applied Physics 131 (14), 2022 | 25 | 2022 |
| Band offsets at metalorganic chemical vapor deposited β-(AlxGa1− x) 2O3/β-Ga2O3 interfaces—Crystalline orientation dependence AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao Journal of Vacuum Science & Technology A 39 (6), 2021 | 23 | 2021 |
| Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures AFM Bhuiyan, Z Feng, L Meng, H Zhao Journal of Applied Physics 133 (21), 2023 | 15 | 2023 |
| Large-size free-standing single-crystal β-Ga 2 O 3 membranes fabricated by hydrogen implantation and lift-off Y Zheng, Z Feng, AFMAU Bhuiyan, L Meng, S Dhole, Q Jia, H Zhao, ... Journal of Materials Chemistry C 9 (19), 6180-6186, 2021 | 15 | 2021 |
| Metalorganic chemical vapor deposition of β-(AlxGa1− x) 2O3 thin films on (001) β-Ga2O3 substrates AFM Uddin Bhuiyan, L Meng, HL Huang, J Sarker, C Chae, B Mazumder, ... APL Materials 11 (4), 2023 | 14 | 2023 |
| Metalorganic chemical vapor deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates L Meng, AFM Bhuiyan, Z Feng, HL Huang, J Hwang, H Zhao Journal of Vacuum Science & Technology A 40 (6), 2022 | 12 | 2022 |
| MOCVD growth and band offsets of κ-phase Ga2O3 on c-plane sapphire, GaN-and AlN-on-sapphire, and (100) YSZ substrates AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao Journal of Vacuum Science & Technology A 40 (6), 2022 | 11 | 2022 |
| In situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1− x) 2O3 thin films AFM Bhuiyan, L Meng, HL Huang, J Hwang, H Zhao Journal of Applied Physics 132 (16), 2022 | 11 | 2022 |
| Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (AlxGa1–x)2O3 Films Using Trimethylgallium AFMAU Bhuiyan, L Meng, HL Huang, C Chae, J Hwang, H Zhao physica status solidi (RRL)–Rapid Research Letters 17 (10), 2300224, 2023 | 9 | 2023 |
| Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3 H Ghadi, JF McGlone, E Cornuelle, Z Feng, Y Zhang, L Meng, H Zhao, ... APL Materials 10 (10), 2022 | 9 | 2022 |
| MOCVD Growth of β-Ga2O3 on (001) Ga2O3 Substrates L Meng, D Yu, HL Huang, C Chae, J Hwang, H Zhao Crystal Growth & Design 24 (9), 3737-3745, 2024 | 7 | 2024 |
| Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices S Saha, L Meng, AFM Bhuiyan, A Sharma, CN Saha, H Zhao, U Singisetti Applied Physics Letters 123 (13), 2023 | 7 | 2023 |
| High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes S Saha, L Meng, DS Yu, AFM Anhar Uddin Bhuiyan, H Zhao, U Singisetti Journal of Vacuum Science & Technology A 42 (4), 2024 | 6 | 2024 |
| The role of carbon and CH neutralization in MOCVD β-Ga2O3 using TMGa as precursor L Meng, AFM Bhuiyan, H Zhao Applied Physics Letters 122 (23), 2023 | 6 | 2023 |
Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUVerified email at osu.edu
