| Method for forming strained silicon nitride films and a device containing such films RD Clark US Patent 7,651,961, 2010 | 605 | 2010 |
| Method of forming crystallographically stabilized doped hafnium zirconium based films RD Clark US Patent 7,833,913, 2010 | 521 | 2010 |
| Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition R Clark US Patent App. 11/278,387, 2007 | 514 | 2007 |
| Method for depositing dielectric films RD Clark US Patent 8,962,078, 2015 | 504 | 2015 |
| Nitrogen profile engineering in nitrided high dielectric constant films RD Clark US Patent 7,767,262, 2010 | 500 | 2010 |
| Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition RD Clark US Patent 8,097,300, 2012 | 476 | 2012 |
| High Flow GaCl3 Delivery T Steidl, C Birtcher, R Clark, L Senecal US Patent App. 11/756,091, 2008 | 470 | 2008 |
| Structures and techniques for atomic layer deposition S Aoyama, RD Clark, SP Consiglio, M Hopstaken, H Jagannathan, ... US Patent 8,722,548, 2014 | 431 | 2014 |
| Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition RD Clark US Patent 8,012,442, 2011 | 428 | 2011 |
| Critical Role of Interlayer in Hf0.5Zr0.5O2Ferroelectric FET Nonvolatile Memory Performance K Ni, P Sharma, J Zhang, M Jerry, JA Smith, K Tapily, R Clark, ... IEEE Transactions on Electron Devices 65 (6), 2461-2469, 2018 | 404 | 2018 |
| Area-selective deposition: fundamentals, applications, and future outlook GN Parsons, RD Clark Chemistry of Materials 32 (12), 4920-4953, 2020 | 307 | 2020 |
| Method for forming ultra-shallow doping regions by solid phase diffusion RD Clark US Patent 8,877,620, 2014 | 298 | 2014 |
| Perspective: New process technologies required for future devices and scaling R Clark, K Tapily, KH Yu, T Hakamata, S Consiglio, D O’meara, C Wajda, ... Apl Materials 6 (5), 2018 | 210 | 2018 |
| Emerging applications for high K materials in VLSI technology RD Clark Materials 7 (4), 2913-2944, 2014 | 204 | 2014 |
| Synthesis and Comparative η1-Alkyl and Sterically Induced Reduction Reactivity of (C5Me5)3Ln Complexes of La, Ce, Pr, Nd, and Sm WJ Evans, JM Perotti, SA Kozimor, TM Champagne, BL Davis, GW Nyce, ... Organometallics 24 (16), 3916-3931, 2005 | 154 | 2005 |
| Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy E Bersch, M Di, S Consiglio, RD Clark, GJ Leusink, AC Diebold Journal of Applied Physics 107 (4), 2010 | 133 | 2010 |
| Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode CH Choi, TS Jeon, R Clark, DL Kwong IEEE Electron Device Letters 24 (4), 215-217, 2003 | 96 | 2003 |
| Bent vs Linear Metallocenes Involving C5Me5 vs C8H8 Ligands: Synthesis, Structure, and Reactivity of the Triple-Decked (C5Me5)(THF) x Sm (C8H8) Sm (THF) x (C5Me5)(x= 0, 1 … WJ Evans, RD Clark, MA Ansari, JW Ziller Journal of the American Chemical Society 120 (37), 9555-9563, 1998 | 95 | 1998 |
| Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack P Sharma, K Tapily, AK Saha, J Zhang, A Shaughnessy, A Aziz, ... 2017 Symposium on VLSI Technology, T154-T155, 2017 | 90 | 2017 |
| MOS characteristics of ultrathin CVD HfAlO gate dielectrics SH Bae, CH Lee, R Clark, DL Kwong IEEE Electron Device Letters 24 (9), 556-558, 2003 | 89 | 2003 |
K. TapilyTokyo Electron LimitedVerified email at us.tel.com