| Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K J Hur, YC Luo, Z Wang, S Lombardo, AI Khan, S Yu IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 7 …, 2021 | 26 | 2021 |
| Trap Capture and Emission Dynamics in Ferroelectric Field-Effect Transistors and their Impact on Device Operation and Reliability N Tasneem, Z Wang, Z Zhao, N Upadhyay, S Lombardo, H Chen, J Hur, ... 2021 IEEE International Electron Devices Meeting (IEDM), 6.1. 1-6.1. 4, 2021 | 23 | 2021 |
| Atomic-scale imaging of polarization switching in an (anti-) ferroelectric memory material: Zirconia (ZrO2) S Lombardo, C Nelson, K Chae, S Reyes-Lillo, M Tian, N Tasneem, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 21 | 2020 |
| Local epitaxial-like templating effects and grain size distribution in atomic layer deposited Hf0.5Zr0.5O2 thin film ferroelectric capacitors SF Lombardo, M Tian, K Chae, J Hur, N Tasneem, S Yu, K Cho, ... Applied Physics Letters 119 (9), 092901, 2021 | 18 | 2021 |
| Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures N Tasneem, H Kashyap, K Chae, C Park, P Lee, SF Lombardo, N Afroze, ... ACS Applied Materials & Interfaces 14 (38), 43897-43906, 2022 | 17 | 2022 |
| Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2 K Chae, SF Lombardo, N Tasneem, M Tian, H Kumarasubramanian, ... ACS Applied Materials & Interfaces, 2022 | 16 | 2022 |
| Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling G Choe, PV Ravindran, A Lu, J Hur, M Lederer, A Reck, S Lombardo, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 15 | 2022 |
| Efficiency of Ferroelectric Field-Effect Transistors: An Experimental Study N Tasneem, MM Islam, Z Wang, Z Zhao, N Upadhyay, SF Lombardo, ... IEEE Transactions on Electron Devices 69 (3), 1568-1574, 2022 | 11 | 2022 |
| Reliability of fully-integrated nanoscale ReRAM/CMOS combinations as a function of on-wafer current control K Beckmann, J Holt, J Capulong, S Lombardo, NC Cady, J Van Nostrand 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW …, 2014 | 7 | 2014 |
| High-Performance HfO/AlO Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD Platform P Mukhopadhyay, I Fletcher, ZC Couvertier, J Morris, J Perez, C Nichols, ... IEEE Transactions on Electron Devices, 2024 | 4 | 2024 |
| Endurance and Reliability of Hybrid CMOS/ReRAM for Data Storage and Encryption Applications K Beckmann, JS Holt, J Capulong, Z Alamgir, S Lombardo, ... 40st Annu. GOMACTech Conf, 1-4, 2015 | 4 | 2015 |
| PbI2 Nanocrystal Growth by Atomic Layer Deposition from Pb(tmhd)2 and HI JN Vagott, K Bairley, J Hidalgo, CAR Perini, AF Castro-Méndez, ... Chemistry of Materials, 2022 | 3 | 2022 |
| Interfacial Oxide Layer Scavenging in Ferroelectric Hf0. 5Zr0. 5O2-Based MOS Structures With Ge Channel for Reduced Write Voltages C Park, H Kashyap, D Das, J Hur, N Tasneem, S Lombardo, N Afroze, ... IEEE Transactions on Electron Devices 70 (8), 4479-4483, 2023 | 2 | 2023 |
| Engineering High-K Switching Devices for in-Memory Computing A Zeinati, D Misra, D Triyoso, K Tapily, RD Clark, S Consiglio, ... 245th ECS Meeting (May 26-30, 2024), 2024 | | 2024 |
| Interfacial Oxide Layer Scavenging in Ferroelectric HfZrO-Based MOS Structures With Ge Channel for Reduced Write Voltages C Park, H Kashyap, D Das, J Hur, N Tasneem, S Lombardo, N Afroze, ... IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Advanced Microstructural Characterization of Ferroelectric and Antiferroelectric Fluorite-Structure Binary Oxide Thin Films for Memory Applications SF Lombardo Georgia Institute of Technology, 2022 | | 2022 |
| PbI2 nanocrystal growth by atomic layer deposition of Pb (tmhd) 2 and HI JP Correa-Baena, J Vagott, K Bairley, CAR Perini, AFC Mendez, ... | | 2022 |
