| A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors T Ghani, M Armstrong, C Auth, M Bost, P Charvat, G Glass, T Hoffmann, ... IEEE International Electron Devices Meeting 2003, 11.6. 1-11.6. 3, 2003 | 1080 | 2003 |
| A 90-nm Logic Technology Featuring Strained-Silicon S Thompson, M Armstrong, C Auth, M Alavi, M Buehler, R Chau, G Glass IEEE TRANSACTIONS ON ELECTRON DEVICES 51 (11), 1790, 2004 | 949 | 2004 |
| A Logic Nanotechnology Featuring Strained-Silicon S Thompson, M Armstrong, C Auth, S Cea, R Chau, G Glass IEEE ELECTRON DEVICE LETTERS 25 (4), 191, 2004 | 698 | 2004 |
| 45nm High-k + Metal Gate Strain-Enhanced Transistors C Auth, A Cappellani, JS Chun, A Dalis, A Davis, T Ghani, G Glass 2008 Symposium on VLSI Technology Digest of Technical Papers 978, 2008 | 608 | 2008 |
| A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1/spl mu/m/sup 2/SRAM cell S Thompson, N Anand, M Armstrong, C Auth, B Arcot, M Alavi, P Bai, ... Digest. International Electron Devices Meeting,, 61-64, 2002 | 456 | 2002 |
| Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si (001). A Vailionis, G G Physical review letters 85 (17), 2000 | 251 | 2000 |
| Ultrahigh B doping (<~ 10 22 cm− 3) during Si (001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport G Glass, H Kim, P Desjardins, N Taylor, T Spila, Q Lu, JE Greene Physical Review B 61 (11), 7628, 2000 | 49 | 2000 |
| Electrically active and inactive B lattice sites in ultrahighly B doped Si (001): An X-ray near-edge absorption fine-structure and high-resolution diffraction study A Vailionis, G Glass, P Desjardins, DG Cahill, JE Greene Physical review letters 82 (22), 4464, 1999 | 46 | 1999 |
| Atomic-Level Control during Film Growth under Highly Kinetically Constrained Conditions: H Mediation and Ultrahigh Doping during Si1 xGex Gas Source Epitaxy JE Greene MRS BULLETIN, 2001 | 16 | 2001 |
| Growth of on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions N Taylor, H Kim, T Spila, JA Eades, G Glass, P Desjardins, JE Greene Journal of applied physics 85 (1), 501-511, 1999 | 12 | 1999 |
T. GhaniIntel Senior FellowVerified email at intel.com
