| High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells N Dharmarasu, M Yamaguchi, A Khan, T Yamada, T Tanabe, S Takagishi, ... Applied Physics Letters 79 (15), 2399-2401, 2001 | 112 | 2001 |
| Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells A Khan, M Yamaguchi, Y Ohshita, N Dharmarasu, K Araki, T Abe, H Itoh, ... Journal of Applied Physics 90 (3), 1170-1178, 2001 | 85 | 2001 |
| GaN Schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBE L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ... IEEE Sensors Journal 17 (1), 72-77, 2016 | 42 | 2016 |
| Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si (111) by plasma-assisted molecular beam epitaxy K Radhakrishnan, N Dharmarasu, Z Sun, S Arulkumaran, GI Ng Applied Physics Letters 97 (23), 2010 | 40 | 2010 |
| Effects of proton irradiation on InGaP solar cells N Dharmarasu, A Khan, M Yamaguchi, T Takamoto, T Ohshima, H Itoh, ... Journal of applied physics 91 (5), 3306-3311, 2002 | 37 | 2002 |
| Analysis for superior radiation resistance of InP-based solar cells M Yamaguchi, A Khan, N Dharmarasu Solar energy materials and solar cells 75 (1-2), 285-291, 2003 | 36 | 2003 |
| Wide continuous tuning range of 221 nm by InP/air-gap vertical-cavity filters A Hasse, S Irmer, J Daleiden, N Dharmarasu, S Hansmann, H Hillmer Electronics letters 42 (17), 1, 2006 | 30 | 2006 |
| Majority- and minority-carrier deep level traps in proton-irradiated -InGaP space solar cells N Dharmarasu, M Yamaguchi, JC Bourgoin, T Takamoto, T Ohshima, ... Applied physics letters 81 (1), 64-66, 2002 | 26 | 2002 |
| AlGaN/GaN HEMT-based high-sensitive NO2 gas sensors A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu Japanese Journal of Applied Physics 58 (SC), SCCD23, 2019 | 24 | 2019 |
| Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si (111) using ammonia-molecular beam epitaxy L Ravikiran, N Dharmarasu, K Radhakrishnan, M Agrawal, L Yiding, ... Journal of Applied Physics 117 (2), 2015 | 23 | 2015 |
| Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si (111) by ammonia molecular beam epitaxy N Dharmarasu, K Radhakrishnan, M Agrawal, L Ravikiran, S Arulkumaran, ... Applied physics express 5 (9), 091003, 2012 | 23 | 2012 |
| Low energy proton irradiation induced interface defects on Pd/n-GaAs Schottky diodes and its characteristics N Dharmarasu, S Arulkumaran, RR Sumathi, P Jayavel, J Kumar, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998 | 23 | 1998 |
| Improved electrical properties on the anodic oxide/InP interface for MOS structures RR Sumathi, N Dharmarasu, S Arulkumaran, P Jayavel, J Kumar Journal of electronic materials 27, 1358-1361, 1998 | 18 | 1998 |
| On the enhancement of effective barrier height in Tin-GaAs Schottky barrier diodes S Arulkumaran, J Arokiaraj, N Dharmarasu, J Kumar Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996 | 17 | 1996 |
| Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering S Patwal, M Agrawal, K Radhakrishnan, TLA Seah, N Dharmarasu physica status solidi (a) 217 (7), 1900818, 2020 | 16 | 2020 |
| Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy M Agrawal, N Dharmarasu, K Radhakrishnan, L Ravikiran Thin Solid Films 520 (24), 7109-7114, 2012 | 16 | 2012 |
| Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures R Lingaparthi, N Dharmarasu, K Radhakrishnan, A Ranjan, TLA Seah, ... Applied Physics Letters 118 (12), 2021 | 15 | 2021 |
| A study on GaSi interdiffusion during (Al) GaN/AlN growth on Si by plasma assisted molecular beam epitaxy Y Zheng, M Agrawal, N Dharmarasu, K Radhakrishnan, S Patwal Applied Surface Science 481, 319-326, 2019 | 14 | 2019 |
| Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si (111) by plasma assisted molecular beam epitaxy M Agrawal, K Radhakrishnan, N Dharmarasu, SS Pramana Japanese Journal of Applied Physics 54 (6), 065701, 2015 | 14 | 2015 |
| Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors S Arulkumaran, GI Ng, CH Lee, ZH Liu, K Radhakrishnan, N Dharmarasu, ... Solid-state electronics 54 (11), 1430-1433, 2010 | 14 | 2010 |
K RadhakrishnanNanyang technological universityVerified email at ntu.edu.sg
