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Dheeraj Kumar Sinha
Dheeraj Kumar Sinha
Department of Electronics and Communication Engineering, Indian Institute of Information Technology
Verified email at iitg.ernet.in - Homepage
Title
Cited by
Cited by
Year
2-D Analytical Modeling of Surface Potential and Threshold Voltage for Vertical Super-Thin Body FET
S Roy, A Chatterjee, DK Sinha, R Pirogova, S Baishya
IEEE Transactions on Electron Devices 64 (5), 2106-2112, 2017
132017
Modeling Erratic Behavior Due to High Current Filamentation in Bipolar Structures Under Dynamic Avalanche Conditions
DK Sinha, A Chatterjee, RD Schrimpf
IEEE Transactions on Electron Devices 63 (8), 3185-3192, 2016
62016
Fast ionization-front-induced anomalous switching behavior in trigger bipolar transistors of Marx-bank circuits under base-drive conditions
DK Sinha, MS Ansari, A Ray, G Trivedi, A Chatterjee, RD Schrimpf
IEEE Transactions on Plasma Science 46 (6), 2064-2071, 2018
22018
A Novel Co-design Methodology for Optimizing ESD Protection Device Using Layout Level Approach
V Abhinav, DK Sinha, A Chatterjee, F Brewer
2016 29th International Conference on VLSI Design and 2016 15th …, 2016
22016
Design of band-gap engineered silicon-germanium Junctionless Double-gate FET for ZRAM application
DK Sinha, A Chatterjee, G Trivedi, V Koldyaev
2015 6th International Conference on Computers and Devices for Communication …, 2015
22015
Methodology for optimizing ESD protection for high speed LVDS based I/Os
V Abhinav, A Chatterjee, DK Sinha, R Singh
2015 19th International Symposium on VLSI Design and Test, 1-5, 2015
22015
SPICE level implementation of physics of filamentation in ESD protection devices
DK Sinha, A Chatterjee
Microelectronics Reliability 79, 239-247, 2017
12017
FEM Based Device Simulator for High Voltage Devices
A Ray, G Kumar, S Bordoloi, DK Sinha, P Agarwal, G Trivedi
VLSI Design and Test: 21st International Symposium, VDAT 2017, Roorkee …, 2017
12017
FEM Based Device Simulator for High Voltage Devices
DK Sinha, P Agarwal, G Trivedi
VLSI Design and Test: 21st International Symposium, VDAT 2017, Roorkee …, 2017
2017
Modeling ambipolar behavior under high current injection regimes in layered semiconductor device structures
DK Sinha
Guwahati, 2017
2017
Two Dimensional Numerical Simulator for Modeling NDC Region in SNDC Devices
DK Sinha, A Chatterjee, G Trivedi
Journal of Physics: Conference Series 759 (1), 012099, 2016
2016
A Novel Capacitorless DRAM Cell Design Using Band-Gap Engineered Junctionless Double-Gate FET
DK Sinha, A Chatterjee, V Abhinav, G Trivedi, V Koldyaev
2016 29th International Conference on VLSI Design and 2016 15th …, 2016
2016
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