| Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition X Liu, J Kim, R Yeluri, S Lal, H Li, J Lu, S Keller, B Mazumder, JS Speck, ... Journal of Applied Physics 114 (16), 2013 | 45 | 2013 |
| Engineering the (In, Al, Ga) N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors J Lu, X Zheng, M Guidry, D Denninghoff, E Ahmadi, S Lal, S Keller, ... Applied Physics Letters 104 (9), 2014 | 39 | 2014 |
| In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors X Liu, R Yeluri, J Kim, S Lal, A Raman, C Lund, S Wienecke, J Lu, ... Applied Physics Letters 103 (5), 2013 | 35 | 2013 |
| Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition J Lu, D Denninghoff, R Yeluri, S Lal, G Gupta, M Laurent, S Keller, ... Applied Physics Letters 102 (23), 2013 | 29 | 2013 |
| Wafer-bonded pn heterojunction of GaAs and chemomechanically polished N-polar GaN J Kim, NG Toledo, S Lal, J Lu, TE Buehl, UK Mishra IEEE Electron Device Letters 34 (1), 42-44, 2012 | 25 | 2012 |
| High-temperature-annealed flexible carbon nanotube network transistors for high-frequency wearable wireless electronics Y Lan, Y Yang, Y Wang, Y Wu, Z Cao, S Huo, L Jiang, Y Guo, Y Wu, ... ACS Applied Materials & Interfaces 12 (23), 26145-26152, 2020 | 22 | 2020 |
| Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN R Yeluri, X Liu, M Guidry, OS Koksaldi, S Lal, J Kim, J Lu, S Keller, ... Applied Physics Letters 105 (22), 2014 | 17 | 2014 |
| InGaAs-InGaN wafer-bonded current aperture vertical electron transistors (BAVETs) S Lal, E Snow, J Lu, B Swenson, S Keller, SP Denbaars, UK Mishra Journal of electronic materials 41, 857-864, 2012 | 15 | 2012 |
| Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain J Kim, MA Laurent, H Li, S Lal, UK Mishra Applied Physics Letters 106 (2), 2015 | 11 | 2015 |
| Impact of gate-aperture overlap on the channel-pinch off in InGaAs/InGaN-based bonded aperture vertical electron transistor S Lal, J Lu, G Gupta, BJ Thibeault, SP DenBaars, UK Mishra IEEE electron device letters 34 (12), 1500-1502, 2013 | 7 | 2013 |
| Characteristics of native oxides-interfaced GaAs/Ge np diodes J Zhou, J Gong, S Lal, J Kim, W Lin, C Chen, C Li, Y Lu, S Qiu, Y Dong, ... IEEE Electron Device Letters, 2024 | 6 | 2024 |
| Suppression of anomalously large threshold voltage in wafer-bonded vertical transistors by enhancing critical field to impact ionization S Lal, J Lu, BJ Thibeault, MH Wong, SP DenBaars, UK Mishra IEEE Transactions on Electron Devices 65 (3), 1079-1086, 2018 | 3 | 2018 |
| Vertical electron transistors with In0.53Ga0.47As channel and N-polar In0.1Ga0.9N/GaN drain achieved by direct wafer-bonding J Kim, S Lal, MA Laurent, UK Mishra 72nd Device Research Conference, 221-222, 2014 | 3 | 2014 |
| Controlling electronic properties of wafer-bonded interfaces among dissimilar materials: A path to developing novel wafer-bonded devices S Lal, J Lu, M Guidry, B Thibeault, SP Denbaars, UK Mishra Device Research Conference (DRC), 2013 71st Annual, 1-2, 2013 | 3 | 2013 |
| Low contact-resistivity and high-uniformity Ni/Au ohmic contacts on Si nanomembranes grafted to Si substrates via low-temperature rapid thermal annealing ZM Jisoo Kim, Jiarui Gong, Wei Lin, Shalini Lal, Xin Su, Daniel Vincent ... Materials Science in Semiconductor Processing 151, 106988, 2022 | 2 | 2022 |
| Reduction of Saturation Voltage in InGaAs-Channel/InGaN-Drain Vertical FETs and the role of traps at the InGaAs/InGaN junction S Lal, J Lu, BJ Thibeault, MH Wong, CG Van de Walle, ... Device Research Conference (DRC), 2019 77th Annual, 1-2, 2019 | 1 | 2019 |
| Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In0.53Ga0.47as channel and III-N drain S Lal, J Lu, B Thibeault, SP Denbaars, UK Mishra 70th Device Research Conference, 165-166, 2012 | 1 | 2012 |
| Q&A: With SSCS Women in Circuits [Society News] S Bommalingaiahnapallya, M Boufarsan, Z Deniz, W Gass, ... IEEE Solid-State Circuits Magazine 17 (1), 131-131, 2025 | | 2025 |
| Q&A: With SSCS Women in Circuits [Society News] S Bommalingaiahnapallya, M Boufarsan, Z Deniz, W Gass, ... IEEE Solid-State Circuits Magazine 16 (4), 117-117, 2024 | | 2024 |
| Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs S Lal, J Lu, BJ Thibeault, MH Wong, CG Van de Walle, SP DenBaars, ... IEEE Transactions on Electron Devices 71 (3), 1702-1709, 2024 | | 2024 |
Umesh MishraUCSBVerified email at ece.ucsb.edu