| Core-level spectroscopy of the clean Si(001) surface: Charge transfer within asymmetric dimers of the 2×1 and c(4×2) reconstructions E Landemark, CJ Karlsson, YC Chao, RIG Uhrberg Physical review letters 69 (10), 1588, 1992 | 455 | 1992 |
| Photoelectron spectroscopy of surface states on semiconductor surfaces GV Hansson, RIG Uhrberg Surface science reports 9 (5-6), 197-292, 1988 | 276 | 1988 |
| Symmetric arsenic dimers on the Si (100) surface RIG Uhrberg, RD Bringans, RZ Bachrach, JE Northrup Physical review letters 56 (5), 520, 1986 | 247 | 1986 |
| Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si (111) surface RIG Uhrberg, RD Bringans, MA Olmstead, RZ Bachrach, JE Northrup Physical Review B 35 (8), 3945, 1987 | 239 | 1987 |
| Experimental evidence for one highly dispersive dangling-bond band on Si (111) 2× 1 RIG Uhrberg, GV Hansson, JM Nicholls, SA Flodström Physical Review Letters 48 (15), 1032, 1982 | 238 | 1982 |
| Surface-state band structure of the Si (100) 2× 1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces LSO Johansson, RIG Uhrberg, P Mårtensson, GV Hansson Physical Review B 42 (2), 1305, 1990 | 223 | 1990 |
| Photoemission study of the surface and bulk electronic structures of Si (111) 7× 7 and Si (111)≤ 3×≤ 3: Al RIG Uhrberg, GV Hansson, JM Nicholls, PES Persson, SA Flodström Physical Review B 31 (6), 3805, 1985 | 218 | 1985 |
| Photoemission study of bonding at the -on-Si(111) interface MA Olmstead, RIG Uhrberg, RD Bringans, RZ Bachrach Physical Review B 35 (14), 7526, 1987 | 209 | 1987 |
| Experimental studies of the dangling-and dimer-bond-related surface electron bands on Si (100)(2× 1) RIG Uhrberg, GV Hansson, JM Nicholls, SA Flodström Physical Review B 24 (8), 4684, 1981 | 191 | 1981 |
| Arsenic overlayer on Si (111): Removal of surface reconstruction MA Olmstead, RD Bringans, RIG Uhrberg, RZ Bachrach Physical Review B 34 (8), 6041, 1986 | 177 | 1986 |
| Surface bands for single-domain 2× 1 reconstructed Si (100) and Si (100): As. Photoemission results for off-axis crystals RD Bringans, RIG Uhrberg, MA Olmstead, RZ Bachrach Physical Review B 34 (10), 7447, 1986 | 176 | 1986 |
| Abrupt rotation of the Rashba spin to the direction perpendicular to the surface K Sakamoto, T Oda, A Kimura, K Miyamoto, M Tsujikawa, A Imai, N Ueno, ... Physical review letters 102 (9), 096805, 2009 | 166 | 2009 |
| Arsenic-terminated Ge (111): An ideal 1× 1 surface RD Bringans, RIG Uhrberg, RZ Bachrach, JE Northrup Physical review letters 55 (5), 533, 1985 | 152 | 1985 |
| Fermi-level pinning and surface-state band structure of the Si(111)-(√3×√3)R30°-Ag surface LSO Johansson, E Landemark, CJ Karlsson, RIG Uhrberg Physical review letters 63 (19), 2092, 1989 | 149 | 1989 |
| Structure of low-coverage phases of Al, Ga, and In on Si (100) JE Northrup, MC Schabel, CJ Karlsson, RIG Uhrberg Physical Review B 44 (24), 13799, 1991 | 148 | 1991 |
| Hydrogen intercalation of graphene grown on 6H-SiC (0001) S Watcharinyanon, C Virojanadara, JR Osiecki, AA Zakharov, ... Surface Science 605 (17-18), 1662-1668, 2011 | 146 | 2011 |
| Interface formation of GaAs with Si (100), Si (111), and Ge (111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As RD Bringans, MA Olmstead, RIG Uhrberg, RZ Bachrach Physical Review B 36 (18), 9569, 1987 | 146 | 1987 |
| Hydrogen chemisorption on Si (111) 7× 7 studied with surface-sensitive core-level spectroscopy and angle-resolved photoemission CJ Karlsson, E Landemark, LSO Johansson, UO Karlsson, RIG Uhrberg Physical Review B 41 (3), 1521, 1990 | 135 | 1990 |
| Atomic origins of the surface components in the Si 2p core-level spectra of the Si(111)7×7 surface CJ Karlsson, E Landemark, YC Chao, RIG Uhrberg Physical Review B 50 (8), 5767, 1994 | 131 | 1994 |
| Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF2 on Si(111) MA Olmstead, RIG Uhrberg, RD Bringans, RZ Bachrach Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 120 | 1986 |
