| MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ... IEEE Electron device letters 33 (4), 525-527, 2012 | 188 | 2012 |
| Nanowire Channel InAlN/GaN HEMTs With High Linearity ofand DS Lee, H Wang, A Hsu, M Azize, O Laboutin, Y Cao, JW Johnson, ... IEEE electron device letters 34 (8), 969-971, 2013 | 134 | 2013 |
| Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz ML Schuette, A Ketterson, B Song, E Beam, TM Chou, M Pilla, HQ Tserng, ... IEEE Electron Device Letters 34 (6), 741-743, 2013 | 118 | 2013 |
| Passivation effects in Ni∕ AlGaN∕ GaN Schottky diodes by annealing H Kim, M Schuette, H Jung, J Song, J Lee, W Lu, JC Mabon Applied physics letters 89 (5), 2006 | 69 | 2006 |
| Impact ofPassivation Thickness in Highly Scaled GaN HEMTs DS Lee, O Laboutin, Y Cao, W Johnson, E Beam, A Ketterson, M Schuette, ... IEEE electron device letters 33 (7), 976-978, 2012 | 58 | 2012 |
| InAlN Barrier Scaled Devices for Very Highand for Low-Voltage RF Applications P Saunier, ML Schuette, TM Chou, HQ Tserng, A Ketterson, E Beam, ... IEEE transactions on electron devices 60 (10), 3099-3104, 2013 | 52 | 2013 |
| Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates B Song, B Sensale-Rodriguez, R Wang, J Guo, Z Hu, Y Yue, F Faria, ... IEEE Transactions on Electron Devices 61 (3), 747-754, 2014 | 49 | 2014 |
| Improved sensitivity of AlGaN/GaN field effect transistor biosensors by optimized surface functionalization X Wen, ML Schuette, SK Gupta, TR Nicholson, SC Lee, W Lu IEEE Sensors Journal 11 (8), 1726-1735, 2010 | 41 | 2010 |
| 317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance DS Lee, O Laboutin, Y Cao, W Johnson, E Beam, A Ketterson, M Schuette, ... physica status solidi c 10 (5), 827-830, 2013 | 28 | 2013 |
| Monolithically integrated E/D-mode InAlN HEMTs with ƒt/ƒmax> 200/220 GHz B Song, B Sensale-Rodriguez, R Wang, A Ketterson, M Schuette, E Beam, ... 70th Device Research Conference, 1-2, 2012 | 26 | 2012 |
| Cl2/BCl3/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors H Kim, ML Schuette, W Lu Journal of Vacuum Science & Technology B 29 (3), 2011 | 20 | 2011 |
| Self-aligned AlGaN/GaN high electron mobility transistors J Lee, D Liu, H Kim, M Schuette, JS Flynn, GR Brandes, W Lu Electronics Letters 40 (19), 1227-1228, 2004 | 20 | 2004 |
| Passivation of surface and interface states in AlGaN/GaN HEMT structures by annealing H Kim, ML Schuette, J Lee, W Lu, JC Mabon Journal of electronic materials 36, 1149-1155, 2007 | 18 | 2007 |
| Highly selective zero-bias plasma etching of GaN over AlGaN ML Schuette, W Lu Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 17 | 2007 |
| Ionic metal–oxide TFTs for integrated switching applications ML Schuette, AJ Green, K Leedy, A Crespo, SE Tetlak, KA Sutherlin, ... IEEE Transactions on Electron Devices 63 (5), 1921-1927, 2016 | 16 | 2016 |
| Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs B Sensale-Rodriguez, J Guo, R Wang, J Verma, G Li, T Fang, E Beam, ... Solid-state electronics 80, 67-71, 2013 | 11 | 2013 |
| Copper germanide Ohmic contact on n-type gallium nitride using silicon tetrachloride plasma ML Schuette, W Lu Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005 | 10 | 2005 |
| X-band power performance of N-face GaN MIS-HEMTs MH Wong, DF Brown, ML Schuette, H Kim, V Balasubramanian, W Lu, ... Electronics letters 47 (3), 214-215, 2011 | 9 | 2011 |
| Electrical transport in the copper germanide-n‐GaN system: Experiment and numerical model ML Schuette, W Lu Journal of applied physics 101 (11), 2007 | 9 | 2007 |
| Compositional Study of Copper-Germanium Ohmic Contact to n-GaN ML Schuette, W Lu Journal of electronic materials 36, 420-425, 2007 | 8 | 2007 |