| Comprehensive Schottky barrier height behavior and reliability instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN high-electron-mobility transistors S Chakraborty, TW Kim Micromachines 13 (1), 84, 2022 | 22 | 2022 |
| Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity S Chakraborty, W Amir, JW Shin, KY Shin, CY Cho, JM Kim, T Hoshi, ... Materials 15 (23), 8415, 2022 | 11 | 2022 |
| Performance enhancement of AlGaN/GaN HEMT via trap-state improvement using O2 plasma treatment W Amir, JW Shin, KY Shin, S Chakraborty, CY Cho, JM Kim, ST Lee, ... IEEE Transactions on Electron Devices 70 (6), 2988-2993, 2023 | 10 | 2023 |
| Investigation of mean-time-to-failure measurements from AlGaN/GaN high-electron-mobility transistors using Eyring model S Chakraborty, TW Kim Electronics 10 (24), 3052, 2021 | 6 | 2021 |
| Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure S Chakraborty, TW Kim Micromachines 14 (10), 1833, 2023 | 3 | 2023 |
| Trap Behavior of Metamorphic HEMTs with Pulsed IV and Noise Measurement KY Shin, JW Shin, S Chakraborty, W Amir, CS Shin, TW Kim ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022 | 3 | 2022 |
| New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors S Chakraborty, W Amir, HM Kwon, TW Kim Electronics 12 (14), 3044, 2023 | 2 | 2023 |
| Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions W Amir, S Chakraborty, HM Kwon, TW Kim Materials 16 (12), 4469, 2023 | 2 | 2023 |
| An Explicit Thermal Resistance Model Regarding Self-Heating Effect of AlGaN/GaN High Electron Mobility Transistor S Chakraborty, JW Shin, W Amir, KY Shin, TW Kim Materials Science Forum 1074, 125-131, 2022 | 2 | 2022 |
| Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression S Chakraborty, JW Shin, W Amir, KY Shin, T Hoshi, T Tsutsumi, ... Solid-State Electronics 210, 108788, 2023 | 1 | 2023 |
| Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1−xN/GaN High Electron Mobility Transistors W Amir, JW Shin, S Chakraborty, KY Shin, T Hoshi, T Tsutsumi, ... physica status solidi (a) 221 (13), 2300597, 2024 | | 2024 |
| Effect of stress voltage and temperature on the reliability of AlGaN/GaN HEMTs for RF and Microwave application S Chakraborty, W Amir, T Hoshi, T Tsutsumi, H Sugiyama, TW Kim physica status solidi (a), 2023 | | 2023 |
| Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs KY Shin, JW Shin, W Amir, S Chakraborty, JP Shim, ST Lee, H Jang, ... Materials 16 (18), 6138, 2023 | | 2023 |
Taewoo KimTexas Tech UniversityVerified email at ttu.edu