| Optical and structural properties of CuO nanofilm: its diode application İY Erdoğan, Ö Güllü Journal of Alloys and Compounds 492 (1-2), 378-383, 2010 | 205 | 2010 |
| Fabrication and electrical characteristics of Schottky diode based on organic material Ö Güllü, Ş Aydoğan, A Türüt Microelectronic Engineering 85 (7), 1647-1651, 2008 | 194 | 2008 |
| The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes M Biber, Ö Güllü, S Forment, RL Van Meirhaeghe, A Türüt Semiconductor science and technology 21 (1), 1, 2005 | 90 | 2005 |
| Photovoltaic and electronic properties of quercetin/p-InP solar cells Ö Güllü, A Türüt Solar Energy materials and Solar cells 92 (10), 1205-1210, 2008 | 88 | 2008 |
| Electrical analysis of organic dye-based MIS Schottky contacts Ö Güllü, A Türüt Microelectronic Engineering 87 (12), 2482-2487, 2010 | 83 | 2010 |
| High barrier Schottky diode with organic interlayer Ö Güllü, Ş Aydoğan, A Türüt Solid State Communications 152 (5), 381-385, 2012 | 80 | 2012 |
| Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures Ö Güllü, Ö Barış, M Biber, A Türüt Applied Surface Science 254 (10), 3039-3044, 2008 | 77 | 2008 |
| Electronic properties of the metal/organic interlayer/inorganic semiconductor sandwich device Ö Güllü, T Kilicoglu, A Türüt Journal of Physics and Chemistry of Solids 71 (3), 351-356, 2010 | 74 | 2010 |
| Electrical analysis of organic interlayer based metal/interlayer/semiconductor diode structures Ö Güllü, A Türüt Journal of Applied Physics 106 (10), 2009 | 73 | 2009 |
| Electrical characterization of the Al/new fuchsin/n-Si organic-modified device Ö Güllü, S Asubay, Ş Aydoğan, A Türüt Physica E: Low-dimensional Systems and Nanostructures 42 (5), 1411-1416, 2010 | 67 | 2010 |
| Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor Ö Güllü, A Türüt Journal of Alloys and Compounds 509 (3), 571-577, 2011 | 51 | 2011 |
| Fabrication and electrical properties of Al/Safranin T/n-Si/AuSb structure Ö Güllü, Ş Aydoğan, A Türüt Semiconductor science and technology 23 (7), 075005, 2008 | 51 | 2008 |
| Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilms Ö Güllü Microelectronic engineering 87 (4), 648-651, 2010 | 48 | 2010 |
| Gamma irradiation-induced changes at the electrical characteristics of organic-based Schottky structures Ö Güllü, M Çankaya, M Biber, A Türüt Journal of Physics D: Applied Physics 41 (13), 135103, 2008 | 47 | 2008 |
| DNA-based organic-on-inorganic semiconductor Schottky structures Ö Güllü, M Çankaya, Ö Barış, M Biber, H Özdemir, M Güllüce, A Türüt Applied Surface Science 254 (16), 5175-5180, 2008 | 44 | 2008 |
| Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature Ö Güllü, M Biber, S Duman, A Türüt Applied surface science 253 (17), 7246-7253, 2007 | 43 | 2007 |
| Analysis of the series resistance and interface state densities in metal semiconductor structures G Güler, Ö Güllü, Ş Karataş, ÖF Bakkaloğlu Journal of Physics: Conference Series 153 (1), 012054, 2009 | 41 | 2009 |
| Electrical characterization of organic-on-inorganic semiconductor Schottky structures Ö Güllü, A Türüt, S Asubay Journal of Physics: Condensed Matter 20 (4), 045215, 2008 | 41 | 2008 |
| Silicon MIS diodes with Cr2O3 nanofilm: optical, morphological/structural and electronic transport properties İY Erdoğan, Ö Güllü Applied surface science 256 (13), 4185-4191, 2010 | 40 | 2010 |
| Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes S Asubay, Ö Güllü, A Türüt Applied surface science 254 (11), 3558-3561, 2008 | 40 | 2008 |