Articles with public access mandates - Dagmar GregusovaLearn more
Not available anywhere: 2
Growth and performance of n++ GaN cap layer for HEMTs applications
J Kuzmík, M Blaho, D Gregušová, P Eliáš, O Pohorelec, S Hasenöhrl, ...
Materials Science in Semiconductor Processing 185, 108959, 2025
Mandates: European Commission
Simple RF on-chip calibration for high-frequency transistor measurements
M Florovič, M Dzuriš, R HarťAnský, J Kovac, A Chvála, D Gregušová, ...
2024 15th International Conference on Advanced Semiconductor Devices and …, 2024
Mandates: European Commission
Available somewhere: 6
Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region
M Jurkovic, D Gregusova, V Palankovski, Š Hascik, M Blaho, K Cico, ...
IEEE electron device letters 34 (3), 432-434, 2013
Mandates: Austrian Science Fund
Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density
M Ťapajna, L Válik, F Gucmann, D Gregušová, K Fröhlich, Š Haščík, ...
Journal of Vacuum Science & Technology B 35 (1), 2017
Mandates: Hungarian Scientific Research Fund
Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
M Ťapajna, R Stoklas, D Gregušová, F Gucmann, K Hušeková, Š Haščík, ...
Applied Surface Science 426, 656-661, 2017
Mandates: Hungarian Scientific Research Fund
InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN
M Mikulics, R Stoklas, A Dadgar, D Gregušová, J Novák, D Grützmacher, ...
Applied physics letters 97 (17), 2010
Mandates: German Research Foundation
InN: Breaking the limits of solid-state electronics
J Kuzmík, A Adikimenakis, M Ťapajna, D Gregušová, Š Haščík, ...
AIP Advances 11 (12), 2021
Mandates: European Commission
Current conduction mechanism and electrical break-down in InN grown on GaN
J Kuzmik, C Fleury, A Adikimenakis, D Gregušová, M Ťapajna, ...
Applied Physics Letters 110 (23), 2017
Mandates: European Commission
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