| Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis R Stoklas, D Gregušová, J Novák, A Vescan, P Kordoš Applied Physics Letters 93 (12), 2008 | 130 | 2008 |
| Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation JT Asubar, Z Yatabe, D Gregusova, T Hashizume Journal of Applied Physics 129 (12), 2021 | 93 | 2021 |
| Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis P Kordoš, R Stoklas, D Gregušová, J Novák Applied Physics Letters 94 (22), 2009 | 90 | 2009 |
| AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide D Gregušová, R Stoklas, K Čičo, T Lalinský, P Kordoš Semiconductor science and technology 22 (8), 947, 2007 | 84 | 2007 |
| Improved transport properties of Al2O3∕ AlGaN∕ GaN metal-oxide-semiconductor heterostructure field-effect transistor P Kordoš, D Gregušová, R Stoklas, K Čičo, J Novák Applied physics letters 90 (12), 2007 | 84 | 2007 |
| Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors M Ťapajna, M Jurkovič, L Válik, Š Haščík, D Gregušová, F Brunner, ... Applied Physics Letters 102 (24), 2013 | 70 | 2013 |
| Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition D Gregušová, R Stoklas, C Mizue, Y Hori, J Novák, T Hashizume, ... Journal of Applied Physics 107 (10), 2010 | 66 | 2010 |
| Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness P Kordoš, D Gregušová, R Stoklas, Š Gaži, J Novák Solid-state electronics 52 (6), 973-979, 2008 | 66 | 2008 |
| Investigation of trap effects in AlGaN∕ GaN field-effect transistors by temperature dependent threshold voltage analysis P Kordoš, D Donoval, M Florovič, J Kováč, D Gregušová Applied Physics Letters 92 (15), 2008 | 64 | 2008 |
| Impact of GaN cap on charges in Al2O3/(GaN/) AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations M Ťapajna, M Jurkovič, L Válik, Š Haščík, D Gregušová, F Brunner, ... Journal of Applied Physics 116 (10), 2014 | 54 | 2014 |
| Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements P Kordoš, R Stoklas, D Gregušová, Š Gaži, J Novák Applied Physics Letters 96 (1), 2010 | 52 | 2010 |
| Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors M Ťapajna, N Killat, V Palankovski, D Gregušová, K Čičo, JF Carlin, ... IEEE Transactions on Electron Devices 61 (8), 2793-2801, 2014 | 47 | 2014 |
| Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes M Mikulics, YC Arango, A Winden, R Adam, A Hardtdegen, ... Applied Physics Letters 108 (6), 2016 | 45 | 2016 |
| The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors P Kordoš, P Kúdela, D Gregušová, D Donoval Semiconductor science and technology 21 (12), 1592, 2006 | 41 | 2006 |
| Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics K Čičo, K Hušeková, M Ťapajna, D Gregušová, R Stoklas, J Kuzmík, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 40 | 2011 |
| Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region M Jurkovic, D Gregusova, V Palankovski, Š Hascik, M Blaho, K Cico, ... IEEE electron device letters 34 (3), 432-434, 2013 | 38 | 2013 |
| Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth D Gregušová, M Jurkovič, Š Haščík, M Blaho, A Seifertová, J Fedor, ... Applied Physics Letters 104 (1), 2014 | 36 | 2014 |
| High-temperature performance of AlGaN/GaN HFETs and MOSHFETs D Donoval, M Florovič, D Gregušová, J Kováč, P Kordoš Microelectronics Reliability 48 (10), 1669-1672, 2008 | 35 | 2008 |
| Formation of GaAs three-dimensional objects using AlAs “facet-forming” sacrificial layer and based solution V Cambel, D Gregušová, R Kúdela Journal of applied physics 94 (7), 4643-4648, 2003 | 33 | 2003 |
| Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density M Ťapajna, L Válik, F Gucmann, D Gregušová, K Fröhlich, Š Haščík, ... Journal of Vacuum Science & Technology B 35 (1), 2017 | 32 | 2017 |
