| A three-color, solid-state, three-dimensional display E Downing, L Hesselink, J Ralston, R Macfarlane Science 273 (5279), 1185-1189, 1996 | 1796 | 1996 |
| Binding of shallow donor impurities in quantum-well structures NC Jarosik, BD McCombe, BV Shanabrook, J Comas, J Ralston, G Wicks Physical review letters 54 (12), 1283, 1985 | 281 | 1985 |
| Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers JD Ralston, S Weisser, I Esquivias, EC Larkins, J Rosenzweig, PJ Tasker, ... IEEE Journal of quantum electronics 29 (6), 1648-1659, 1993 | 219 | 1993 |
| Mobile imaging application, device architecture, service platform architecture and services J Ralston, S Saunders, K Kolarov US Patent App. 11/357,661, 2006 | 154 | 2006 |
| Room‐temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices JD Ralston, S O’brien, GW Wicks, LF Eastman Applied physics letters 52 (18), 1511-1513, 1988 | 145 | 1988 |
| Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices N Herres, F Fuchs, J Schmitz, KM Pavlov, J Wagner, JD Ralston, P Koidl, ... Physical Review B 53 (23), 15688, 1996 | 133 | 1996 |
| Intersubband absorption and infrared photodetection at 3.5 and 4.2 μm in GaAs quantum wells H Schneider, F Fuchs, B Dischler, JD Ralston, P Koidl Applied physics letters 58 (20), 2234-2236, 1991 | 132 | 1991 |
| Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers S Weisser, EC Larkins, K Czotscher, W Benz, J Daleiden, I Esquivias, ... IEEE Photonics Technology Letters 8 (5), 608-610, 1996 | 126 | 1996 |
| Photoluminescence study of confined donors in GaAs Al x Ga 1− x As quantum wells X Liu, A Petrou, BD McCombe, J Ralston, G Wicks Physical Review B 38 (12), 8522, 1988 | 110 | 1988 |
| Defect structure and intermixing of ion‐implanted AlxGa1− xAs/GaAs superlattices J Ralston, GW Wicks, LF Eastman, BC De Cooman, CB Carter Journal of applied physics 59 (1), 120-123, 1986 | 102 | 1986 |
| Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy J Schmitz, J Wagner, F Fuchs, N Herres, P Koidl, JD Ralston Journal of crystal growth 150, 858-862, 1995 | 91 | 1995 |
| Intermixing of AlxGa1−xAs/GaAs superlattices by pulsed laser irradiation J Ralston, AL Moretti, RK Jain, FA Chambers Applied physics letters 50 (25), 1817-1819, 1987 | 90 | 1987 |
| System, method and apparatus of video processing and applications J Ralston, S Saunders US Patent App. 11/820,478, 2008 | 89 | 2008 |
| System and method for real-time video communications JD Ralston US Patent 8,896,652, 2014 | 88 | 2014 |
| Efficient software download to configurable communication device JD Ralston, R Subramanian, S Chen, TE Williams US Patent 7,188,159, 2007 | 82 | 2007 |
| Impedance characteristics of quantum-well lasers S Weisser, I Esquivias, PJ Tasker, JD Ralston, B Romero, J Rosenzweig IEEE photonics technology letters 6 (12), 1421-1423, 1994 | 80 | 1994 |
| Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells S Bürkner, M Maier, EC Larkins, W Rothemund, EP O’reilly, JD Ralston Journal of Electronic materials 24, 805-812, 1995 | 78 | 1995 |
| Two‐color GaAs/(AlGa) As quantum well infrared detector with voltage‐tunable spectral sensitivity at 3–5 and 8–12 μm K Kheng, M Ramsteiner, H Schneider, JD Ralston, F Fuchs, P Koidl Applied physics letters 61 (6), 666-668, 1992 | 67 | 1992 |
| Room‐temperature exciton electroabsorption in partially intermixed GaAs/AlGaAs quantum well waveguides JD Ralston, WJ Schaff, DP Bour, LF Eastman Applied physics letters 54 (6), 534-536, 1989 | 65 | 1989 |
| Doping density dependence of intersubband transitions in GaAs/AlxGa1− xAs quantum‐well structures M Ramsteiner, JD Ralston, P Koidl, B Dischler, H Biebl, J Wagner, ... Journal of applied physics 67 (8), 3900-3903, 1990 | 64 | 1990 |
Ignacio EsquiviasUniversidad Politecnica de MadridVerified email at upm.es