Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform X Cui, GH Lee, YD Kim, G Arefe, PY Huang, CH Lee, DA Chenet, X Zhang, ... Nature nanotechnology 10 (6), 534-540, 2015 | 1441 | 2015 |
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage GH Lee, X Cui, YD Kim, G Arefe, X Zhang, CH Lee, F Ye, K Watanabe, ... ACS nano 9 (7), 7019-7026, 2015 | 474 | 2015 |
Thousands of conductance levels in memristors integrated on CMOS M Rao, H Tang, J Wu, W Song, M Zhang, W Yin, Y Zhuo, F Kiani, B Chen, ... Nature 615 (7954), 823-829, 2023 | 256 | 2023 |
Environmental instability and degradation of single-and few-layer WTe2 nanosheets in ambient conditions F Ye, J Lee, J Hu, Z Mao, J Wei, PXL Feng arXiv preprint arXiv:1608.00097, 2016 | 131 | 2016 |
Electrothermally tunable graphene resonators operating at very high temperature up to 1200 K F Ye, J Lee, PXL Feng Nano Letters 18 (3), 1678-1685, 2018 | 84 | 2018 |
Single-and few-layer WTe 2 and their suspended nanostructures: Raman signatures and nanomechanical resonances J Lee, F Ye, Z Wang, R Yang, J Hu, Z Mao, J Wei, PXL Feng Nanoscale 8 (15), 7854-7860, 2016 | 60 | 2016 |
Atomic layer MoS 2-graphene van der Waals heterostructure nanomechanical resonators F Ye, J Lee, PXL Feng Nanoscale 9 (46), 18208-18215, 2017 | 59 | 2017 |
Ultrawide frequency tuning of atomic layer van der Waals heterostructure electromechanical resonators F Ye, A Islam, T Zhang, PXL Feng Nano Letters 21 (13), 5508-5515, 2021 | 45 | 2021 |
Structure and properties of layer-by-layer self-assembled chitosan/lignosulfonate multilayer film H Luo, Q Shen, F Ye, YF Cheng, M Mezgebe, RJ Qin Materials Science and Engineering: C 32 (7), 2001-2006, 2012 | 35 | 2012 |
Diffusive Memristors with Uniform and Tunable Relaxation Time for Spike Generation in Event‐Based Pattern Recognition F Ye, F Kiani, Y Huang, Q Xia Advanced Materials 35 (37), 2204778, 2023 | 32 | 2023 |
Ultra‐High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics F Ye, Q Liu, B Xu, PXL Feng, X Zhang Small 19 (12), 2205726, 2023 | 22 | 2023 |
Gate-tuned temperature in a hexagonal boron nitride-encapsulated 2-D semiconductor device Y Li, F Ye, J Xu, W Zhang, PXL Feng, X Zhang IEEE Transactions on Electron Devices 65 (10), 4068-4072, 2018 | 20 | 2018 |
Small angle x-ray scattering of iron oxide nanoparticle monolayers formed on a liquid surface D Zhang, C Lu, J Hu, SW Lee, F Ye, IP Herman The Journal of Physical Chemistry C 119 (19), 10727-10733, 2015 | 17 | 2015 |
Identification and classification of exfoliated graphene flakes from microscopy images using a hierarchical deep convolutional neural network S Mahjoubi, F Ye, Y Bao, W Meng, X Zhang Engineering Applications of Artificial Intelligence 119, 105743, 2023 | 14 | 2023 |
From memristive devices to neuromorphic systems Y Huang, F Kiani, F Ye, Q Xia Applied Physics Letters 122 (11), 2023 | 13 | 2023 |
Glowing graphene nanoelectromechanical resonators at ultra-high temperature up to 2650K F Ye, J Lee, PXL Feng 2018 IEEE international Electron devices meeting (IEDM), 4.4. 1-4.4. 4, 2018 | 9 | 2018 |
Thousands of conductance levels in memristors monolithically integrated on CMOS J Yang, M Rao, H Tang, JB Wu, W Song, M Zhang, W Yin, Y Zhuo, F Kiani, ... | 6 | 2022 |
Very high interfacial thermal conductance in fully hBN-encapsulated MoS2 van der Waals heterostructure F Ye, Q Liu, B Xu, PXL Feng, X Zhang arXiv preprint arXiv:2102.05239, 2021 | 6 | 2021 |
Very-wide electrothermal tuning of graphene nanoelectromechanical resonators F Ye, J Lee, PXL Feng 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems …, 2017 | 6 | 2017 |
Phase Transition of MoTe2 Controlled in van der Waals Heterostructure Nanoelectromechanical Systems F Ye, A Islam, Y Wang, J Guo, PXL Feng Small 19 (5), 2205327, 2023 | 5 | 2023 |