| Study of GaN light-emitting diodes fabricated by laser lift-off technique CF Chu, FI Lai, JT Chu, CC Yu, CF Lin, HC Kuo, SC Wang Journal of Applied Physics 95 (8), 3916-3922, 2004 | 247 | 2004 |
| Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template DS Wuu, WK Wang, KS Wen, SC Huang, SH Lin, SY Huang, CF Lin, ... Applied Physics Letters 89 (16), 2006 | 197 | 2006 |
| Mesoporous GaN for Photonic Engineering Highly Reflective GaN Mirrors as an Example C Zhang, SH Park, D Chen, DW Lin, W Xiong, HC Kuo, CF Lin, H Cao, ... ACS photonics 2 (7), 980-986, 2015 | 178 | 2015 |
| Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands CH Chiu, TC Lu, HW Huang, CF Lai, CC Kao, JT Chu, CC Yu, HC Kuo, ... Nanotechnology 18 (44), 445201, 2007 | 146 | 2007 |
| White light LED assembly WH Chen, HY Huang, KC Chang, CF Lin US Patent 7,083,302, 2006 | 129 | 2006 |
| Light-output enhancement in a nitride-based light-emitting diode with 22 undercut sidewalls CC Kao, HC Kuo, HW Huang, JT Chu, YC Peng, YL Hsieh, CY Luo, ... IEEE photonics technology letters 17 (1), 19-21, 2004 | 103 | 2004 |
| Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall CF Lin, ZJ Yang, JH Zheng, JJ Dai IEEE photonics technology letters 17 (10), 2038-2040, 2005 | 99 | 2005 |
| Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕ GaN and Ta2O5∕ SiO2 distributed Bragg reflector CC Kao, YC Peng, HH Yao, JY Tsai, YH Chang, JT Chu, HW Huang, ... Applied Physics Letters 87 (8), 2005 | 96 | 2005 |
| Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-off CF Chu, CC Yu, HC Cheng, CF Lin, SC Wang Japanese journal of applied physics 42 (2B), L147, 2003 | 84 | 2003 |
| Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching HW Huang, CC Kao, TH Hsueh, CC Yu, CF Lin, JT Chu, HC Kuo, ... Materials Science and Engineering: B 113 (2), 125-129, 2004 | 83 | 2004 |
| The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer CF Lin, GC Chi, MS Feng, JD Guo, JS Tsang, JM Hong Applied physics letters 68 (26), 3758-3760, 1996 | 82 | 1996 |
| High-efficiency InGaN-based light-emitting diodes with nanoporous GaN: Mg structure CF Lin, JH Zheng, ZJ Yang, JJ Dai, DY Lin, CY Chang, ZX Lai, CS Hong Applied physics letters 88 (8), 2006 | 80 | 2006 |
| Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates RH Horng, WK Wang, SC Huang, SY Huang, SH Lin, CF Lin, DS Wuu Journal of crystal growth 298, 219-222, 2007 | 79 | 2007 |
| Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching CC Yu, CF Chu, JY Tsai, HW Huang, TH Hsueh, CF Lin, SC Wang Japanese journal of applied physics 41 (8B), L910, 2002 | 77 | 2002 |
| Illumination apparatus with laser emitting diode WH Chen, H Huang, K Chang, CF Lin US Patent App. 10/760,416, 2005 | 61 | 2005 |
| Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography HW Huang, CH Lin, JK Huang, KY Lee, CF Lin, CC Yu, JY Tsai, R Hsueh, ... Materials Science and Engineering: B 164 (2), 76-79, 2009 | 59 | 2009 |
| 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering TY Wang, CT Tasi, CF Lin, DS Wuu Scientific Reports 7 (1), 14422, 2017 | 56 | 2017 |
| Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching CC Kao, HW Huang, JY Tsai, CC Yu, CF Lin, HC Kuo, SC Wang Materials Science and Engineering: B 107 (3), 283-288, 2004 | 54 | 2004 |
| InGaN light-emitting diodes with an embedded nanoporous GaN distributed Bragg reflectors GY Shiu, KT Chen, FH Fan, KP Huang, WJ Hsu, JJ Dai, CF Lai, CF Lin Scientific Reports 6 (1), 29138, 2016 | 53 | 2016 |
| An AlN sacrificial buffer layer inserted into the GaN/patterned sapphire substrate for a chemical lift-off process CF Lin, JJ Dai, MS Lin, KT Chen, WC Huang, CM Lin, RH Jiang, ... Applied physics express 3 (3), 031001, 2010 | 52 | 2010 |
