| Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN F Iucolano, F Roccaforte, A Alberti, C Bongiorno, S Di Franco, V Raineri Journal of applied physics 100 (12), 2006 | 117 | 2006 |
| High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect A Sciuto, F Roccaforte, S Di Franco, V Raineri, G Bonanno Applied physics letters 89 (8), 2006 | 105 | 2006 |
| Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ... ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017 | 97 | 2017 |
| Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs G Greco, F Iucolano, S Di Franco, C Bongiorno, A Patti, F Roccaforte IEEE Transactions on Electron Devices 63 (7), 2735 - 2741, 2016 | 77 | 2016 |
| Microscopic mechanisms of graphene electrolytic delamination from metal substrates G Fisichella, S Di Franco, F Roccaforte, S Ravesi, F Giannazzo Applied Physics Letters 104 (23), 2014 | 66 | 2014 |
| Molecular doping applied to Si nanowires array based solar cells RA Puglisi, C Garozzo, C Bongiorno, S Di Franco, M Italia, G Mannino, ... Solar Energy Materials and Solar Cells 132, 118-122, 2015 | 54 | 2015 |
| Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, ... Beilstein journal of nanotechnology 8 (1), 254-263, 2017 | 51 | 2017 |
| Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer G Fisichella, E Schiliro, S Di Franco, P Fiorenza, R Lo Nigro, F Roccaforte, ... ACS applied materials & interfaces 9 (8), 7761-7771, 2017 | 48 | 2017 |
| Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates G Fisichella, S Di Franco, P Fiorenza, RL Nigro, F Roccaforte, C Tudisco, ... Beilstein journal of nanotechnology 4 (1), 234-242, 2013 | 47 | 2013 |
| Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers RL Nigro, E Schilirò, G Mannino, S Di Franco, F Roccaforte Journal of Crystal Growth 539, 125624, 2020 | 38 | 2020 |
| Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC S Rascunà, P Badalà, C Tringali, C Bongiorno, E Smecca, A Alberti, ... Materials Science in Semiconductor Processing 97, 62-66, 2019 | 38 | 2019 |
| Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer A Sciuto, F Roccaforte, S Di Franco, V Raineri, S Billotta, G Bonanno Applied physics letters 90 (22), 2007 | 35 | 2007 |
| Silicon carbide pinch rectifiers using a dual-metal Ti-Ni/sub 2/Si Schottky barrier F Roccaforte, F La Via, A La Magna, S Di Franco, V Raineri IEEE transactions on Electron Devices 50 (8), 1741-1747, 2003 | 34 | 2003 |
| Spontaneous galvanic displacement of Pt nanostructures on nickel foam: Synthesis, characterization and use for hydrogen evolution reaction RG Milazzo, SMS Privitera, D D'Angelo, S Scalese, S Di Franco, F Maita, ... International Journal of Hydrogen Energy 43 (16), 7903-7910, 2018 | 31 | 2018 |
| Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy F Giannazzo, G Greco, S Di Franco, P Fiorenza, I Deretzis, A La Magna, ... Advanced Electronic Materials 6 (2), 1901171, 2020 | 30 | 2020 |
| Effect of high temperature annealing (T> 1650 C) on the morphological and electrical properties of p-type implanted 4H-SiC layers M Spera, D Corso, S Di Franco, G Greco, A Severino, P Fiorenza, ... Materials Science in Semiconductor Processing 93, 274-279, 2019 | 30 | 2019 |
| Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, ... physica status solidi (RRL)–Rapid Research Letters 10 (11), 797-801, 2016 | 28 | 2016 |
| High growth rate process in a SiC horizontal CVD reactor using HCl F La Via, G Galvagno, F Roccaforte, F Giannazzo, S Di Franco, ... Microelectronic engineering 83 (1), 48-50, 2006 | 28 | 2006 |
| New achievements on CVD based methods for SIC epitaxial growth D Crippa, GL Valente, A Ruggiero, L Neri, R Reitano, L Calcagno, G Foti, ... Materials Science Forum 483, 67-72, 2005 | 28 | 2005 |
| Interface state density evaluation of high quality hetero-epitaxial 3C–SiC (0 0 1) for high-power MOSFET applications R Anzalone, S Privitera, M Camarda, A Alberti, G Mannino, P Fiorenza, ... Materials Science and Engineering: B 198, 14-19, 2015 | 27 | 2015 |
