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Somilkumar Rathi (Somil)
Somilkumar Rathi (Somil)
Semiconductors
Verified email at asu.edu
Title
Cited by
Cited by
Year
Tin-catalyzed plasma-assisted growth of silicon nanowires
SJ Rathi, BN Jariwala, JD Beach, P Stradins, PC Taylor, X Weng, Y Ke, ...
The Journal of Physical Chemistry C 115 (10), 3833-3839, 2011
722011
On the electronic and geometric structures of armchair GeC nanotubes: a hybrid density functional study
SJ Rathi, AK Ray
Nanotechnology 19 (33), 335706, 2008
422008
Guided VLS growth of epitaxial lateral Si nanowires
SJ Rathi, DJ Smith, J Drucker
Nano letters 13 (8), 3878-3883, 2013
362013
On the existence and stability of single walled SiGe nanotubes
SJ Rathi, AK Ray
Chemical Physics Letters 466 (1-3), 79-83, 2008
282008
Dual hydrogen barrier layer for memory devices
N Sato, N Mukherjee, M Manfrini, T Gosavi, RK Dokania, SJ Rathi, ...
US Patent 11,869,928, 2024
242024
Carbon monoxide-induced reduction and healing of graphene oxide
B Narayanan, SL Weeks, BN Jariwala, B Macco, JW Weber, SJ Rathi, ...
Journal of Vacuum Science & Technology A 31 (4), 2013
222013
Free standing silica thin films with highly ordered perpendicular nanopores
J Cheng, SJ Rathi, P Stradins, GL Frey, RT Collins, SKR Williams
RSC advances 4 (15), 7627-7633, 2014
192014
A hybrid density functional study of zigzag and chiral Si nanotubes
SJ Rathi, AK Ray
Journal of Computational and Theoretical Nanoscience 5 (4), 464-475, 2008
182008
Optimization of In2Se3/Si(111) Heteroepitaxy To Enable Bi2Se3/In2Se3 Bilayer Growth
SJ Rathi, DJ Smith, J Drucker
Crystal Growth & Design 14 (9), 4617-4623, 2014
142014
Multi-region diffusion barrier containing titanium, silicon and nitrogen
VV Vats, MZ Karim, BS Choi, SJ Rathi, N Mukherjee
US Patent 11,942,365, 2024
52024
Achieving near-zero temperature coefficient of resistivity in atomic layer deposition TiSixN films through composition tuning
C Feit, S Chugh, AR Dhamdhere, HY Kim, S Dabas, SJ Rathi, ...
Journal of Vacuum Science & Technology A 38 (6), 2020
52020
Systems and methods of placing substrates in semiconductor manufacturing equipment
A Finkelman, SJ Rathi, N Mukherjee
US Patent 11,328,944, 2022
42022
Diffusion barrier properties of atomic layer deposited TiSiN films
SY Lee, J Mack, HY Kim, SH Jung, SJ Rathi, N Mukherjee
Materials Letters 315, 131912, 2022
32022
Ab initio study of the structure and properties of amorphous silicon hydride from accelerated molecular dynamics simulations
R Atta-Fynn, SJ Rathi, H Arya, P Biswas
Journal of Non-Crystalline Solids 622, 122641, 2023
12023
Smooth titanium nitride layers and methods of forming the same
SH Jung, N Mukherjee, HS Kim, KJ Choi, M Joo, HY Kim, Y Okuyama, ...
US Patent App. 18/169,684, 2023
12023
Iterative monetization of process development of non-linear polar material and devices
S Manipatruni, N Mukherjee, N Sato, T Gosavi, SJ Rathi, JD Clarkson, ...
US Patent 11,741,428, 2023
12023
Conformal and smooth titanium nitride layers and methods of forming the same
SH Jung, N Mukherjee, Y Okuyama, N Naghibolashrafi, BB Nie, HY Kim, ...
US Patent 11,482,413, 2022
12022
Iterative monetization of precursor in process development of non-linear polar material and devices
S Manipatruni, N Mukherjee, N Sato, T Gosavi, SJ Rathi, JD Clarkson, ...
US Patent 12,147,941, 2024
2024
Method of memory device fabrication through iterative multilayer stack development
S Manipatruni, N Mukherjee, N Sato, T Gosavi, M Manfrini, SJ Rathi, ...
US Patent App. 18/757,370, 2024
2024
Methodology for robust process window discovery in plasmonic nanostructures
M Annamalai, SJ Rathi
Plasmonics: Design, Materials, Fabrication, Characterization, and …, 2024
2024
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Articles 1–20