| A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium G Scappucci, G Capellini, B Johnston, WM Klesse, JA Miwa, MY Simmons Nano Letters 11 (6), 2272-2279, 2011 | 83 | 2011 |
| The electronic structure of ε-Ga2O3 M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ... APL Materials 7 (2), 2019 | 72 | 2019 |
| New avenues to an old material: controlled nanoscale doping of germanium G Scappucci, G Capellini, WM Klesse, MY Simmons Nanoscale 5 (7), 2600-2615, 2013 | 53 | 2013 |
| Preparation of the Ge (001) surface towards fabrication of atomic-scale germanium devices WM Klesse, G Scappucci, G Capellini, MY Simmons Nanotechnology 22 (14), 145604, 2011 | 45 | 2011 |
| Decoupling of graphene from Ni (111) via formation of an interfacial NiO layer Y Dedkov, W Klesse, A Becker, F Späth, C Papp, E Voloshina Carbon 121, 10-16, 2017 | 40 | 2017 |
| Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers G Scappucci, G Capellini, WM Klesse, MY Simmons Nanotechnology 22 (37), 375203, 2011 | 39 | 2011 |
| Compositional dependence of the band-gap of Ge1− x− ySixSny alloys T Wendav, IA Fischer, M Montanari, MH Zoellner, W Klesse, G Capellini, ... Applied Physics Letters 108 (24), 2016 | 35 | 2016 |
| Nanoscale mapping of the 3D strain tensor in a germanium quantum well hosting a functional spin qubit device C Corley-Wiciak, C Richter, MH Zoellner, I Zaitsev, CL Manganelli, ... ACS applied materials & interfaces 15 (2), 3119-3130, 2023 | 34 | 2023 |
| Bottom-up assembly of metallic germanium G Scappucci, WM Klesse, LRA Yeoh, DJ Carter, O Warschkow, NA Marks, ... Scientific reports 5 (1), 12948, 2015 | 29 | 2015 |
| Phosphorus molecules on Ge (001): a playground for controlled n-doping of germanium at high densities G Mattoni, WM Klesse, G Capellini, MY Simmons, G Scappucci ACS nano 7 (12), 11310-11316, 2013 | 28 | 2013 |
| Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium S Shamim, S Mahapatra, G Scappucci, WM Klesse, MY Simmons, ... Physical Review Letters 112 (23), 236602, 2014 | 25 | 2014 |
| Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si (001): A comprehensive analysis CL Manganelli, M Virgilio, O Skibitzki, M Salvalaglio, D Spirito, P Zaumseil, ... Journal of Raman Spectroscopy 51 (6), 989-996, 2020 | 24 | 2020 |
| Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport G Scappucci, WM Klesse, AR Hamilton, G Capellini, DL Jaeger, ... Nano letters 12 (9), 4953-4959, 2012 | 23 | 2012 |
| Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers E Calandrini, T Venanzi, F Appugliese, M Badioli, V Giliberti, ... Applied Physics Letters 109 (12), 2016 | 22 | 2016 |
| -Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level G Scappucci, O Warschkow, G Capellini, WM Klesse, DR McKenzie, ... Physical Review Letters 109 (7), 076101, 2012 | 21 | 2012 |
| Atomic layer doping of strained Ge-on-insulator thin films with high electron densities WM Klesse, G Scappucci, G Capellini, JM Hartmann, MY Simmons Applied Physics Letters 102 (15), 2013 | 20 | 2013 |
| Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers S Shamim, S Mahapatra, G Scappucci, WM Klesse, MY Simmons, ... Scientific Reports 7 (1), 46670, 2017 | 17 | 2017 |
| Dual-temperature encapsulation of phosphorus in germanium δ‐layers toward ultra-shallow junctions G Scappucci, G Capellini, WM Klesse, MY Simmons Journal of Crystal Growth 316 (1), 81-84, 2011 | 17 | 2011 |
| Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer N Taoka, G Capellini, N von den Driesch, D Buca, P Zaumseil, ... Applied Physics Express 9 (3), 031201, 2016 | 14 | 2016 |
| Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si (001) V Schlykow, WM Klesse, G Niu, N Taoka, Y Yamamoto, O Skibitzki, ... Applied Physics Letters 109 (20), 2016 | 13 | 2016 |