| 10×10nm2Hf/HfOxcrossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... 2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011 | 1134* | 2011 |
| Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM YYIN CHEN, L GOUX, S CLIMA, B GOVOREANU, R DEGRAEVE, ... IEEE transactions on electron devices 60 (3), 1114-1121, 2013 | 300 | 2013 |
| Three-dimensional memory device including germanium-containing vertical channels and method of making the same Y Chen, C Petti US Patent 10,756,186, 2020 | 289 | 2020 |
| Evidences of oxygen-mediated resistive-switching mechanism in TiN\ HfO\ Pt cells L Goux, P Czarnecki, YY Chen, L Pantisano, XP Wang, R Degraeve, ... Applied Physics Letters 97, 243509, 2010 | 282 | 2010 |
| Intrinsic switching variability in HfO 2 RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ... 2013 5th IEEE International Memory Workshop, 30-33, 2013 | 266 | 2013 |
| ReRAM: History, Status, and Future Y Chen IEEE Transactions on Electron Devices 67 (4), 1420-1433, 2020 | 264 | 2020 |
| Balancing SET/RESET pulse for> 1010 endurance in HfO2/Hf 1T1R bipolar RRAM YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, G SANKAR KAR, ... IEEE transactions on electron devices 59 (12), 3243-3249, 2012 | 224* | 2012 |
| On the gradual unipolar and bipolar resistive switching of TiN\ HfO2\ Pt memory systems L Goux, YY Chen, L Pantisano, XP Wang, G Groeseneken, M Jurczak, ... Electrochemical and Solid-State Letters 13 (6), G54-G56, 2010 | 151 | 2010 |
| Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ... International Electron Deives Meeting-IEDM, 352-355, 2013 | 147 | 2013 |
| Understanding of the endurance failure in scaled HfO 2-based 1T1R RRAM through vacancy mobility degradation YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ... Electron Devices Meeting (IEDM), 2012 IEEE International, 20.3. 1-20.3. 4, 2012 | 133* | 2012 |
| Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ... VLSI Technology (VLSIT), 2012 Symposium on, 75-76, 2012 | 119 | 2012 |
| Filament observation in metal-oxide resistive switching devices U Celano, Y Yin Chen, DJ Wouters, G Groeseneken, M Jurczak, ... Applied Physics Letters 102 (12), 2013 | 113 | 2013 |
| First-principles simulation of oxygen diffusion in HfO< inf> x</inf>: Role in the resistive switching mechanism S Clima, YY Chen, R Degraeve, M Mees, K Sankaran, B Govoreanu, ... Applied Physics Letters 100 (13), 133102-133102-4, 2012 | 105 | 2012 |
| Ultralow sub-500nA operating current high-performance TiNAl< inf> 2</inf> O< inf> 3</inf> HfO< inf> 2</inf> HfTiN bipolar RRAM achieved through understanding-based stack … L Goux, A Fantini, G Kar, Y Chen, N Jossart, R Degraeve, S Clima, ... VLSI Technology (VLSIT), 2012 Symposium on, 159-160, 2012 | 100* | 2012 |
| Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ... Memory Workshop (IMW), 2012 4th IEEE International, 1-4, 2012 | 95 | 2012 |
| A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory S Yu, Y Yin Chen, X Guan, HS Philip Wong, JA Kittl Applied Physics Letters 100 (4), 2012 | 88 | 2012 |
| Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device Y Yin Chen, G Pourtois, C Adelmann, L Goux, B Govoreanu, R Degreave, ... Applied Physics Letters 100 (11), 2012 | 80 | 2012 |
| Analysis of Complementary RRAM Switching DJ Wouters, L Zhang, A Fantini, R Degraeve, L Goux, YY Chen, ... Electron Device Letters, IEEE 33 (8), 1186-1188, 2012 | 78 | 2012 |
| Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system L Goux, K Sankaran, G Kar, N Jossart, K Opsomer, R Degraeve, ... 2012 Symposium on VLSI Technology (VLSIT), 69-70, 2012 | 63 | 2012 |
| Intrinsic Tailing of Resistive States Distributions in Amorphous HfO x and TaO x Based Resistive Random Access Memories S Clima, YY Chen, A Fantini, L Goux, R Degraeve, B Govoreanu, ... IEEE Electron Device Letters 36 (8), 769-771, 2015 | 61 | 2015 |
GouximecVerified email at imec.be