Articles with public access mandates - Mykhailo VorobiovLearn more
Available somewhere: 13
Two charge states of the acceptor in GaN: Evidence from photoluminescence
MA Reshchikov, M Vorobiov, DO Demchenko, Ü Özgür, H Morkoç, ...
Physical Review B 98 (12), 125207, 2018
Mandates: US National Science Foundation
Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry
MA Reshchikov, M Vorobiov, O Andrieiev, K Ding, N Izyumskaya, ...
Scientific Reports 10 (1), 2223, 2020
Mandates: US National Science Foundation
Shallow and deep states of beryllium acceptor in GaN: Why photoluminescence experiments do not reveal small polarons for defects in semiconductors
DO Demchenko, M Vorobiov, O Andrieiev, TH Myers, MA Reshchikov
Physical Review Letters 126 (2), 027401, 2021
Mandates: US National Science Foundation
The effect of annealing on photoluminescence from defects in ammonothermal GaN
MA Reshchikov, DO Demchenko, D Ye, O Andrieiev, M Vorobiov, ...
Journal of Applied Physics 131 (3), 2022
Mandates: US National Science Foundation, National Science Centre, Poland
Point defects in beryllium-doped GaN
M Vorobiov, O Andrieiev, DO Demchenko, MA Reshchikov
Physical Review B 104 (24), 245203, 2021
Mandates: US National Science Foundation
Photoluminescence related to Ca in GaN
MA Reshchikov, DO Demchenko, M Vorobiov, O Andrieiev, B McEwen, ...
Physical Review B 106 (3), 035206, 2022
Mandates: US National Science Foundation
Stability of the CNHi Complex and the Blue Luminescence Band in GaN
MA Reshchikov, O Andrieiev, M Vorobiov, B McEwen, ...
physica status solidi (b) 258 (12), 2100392, 2021
Mandates: US National Science Foundation
MOCVD Growth and Characterization of Be-Doped GaN
B McEwen, MA Reshchikov, E Rocco, V Meyers, K Hogan, O Andrieiev, ...
ACS Applied Electronic Materials 4 (8), 3780-3785, 2022
Mandates: US National Science Foundation
Defect-related photoluminescence from ammono GaN
MA Reshchikov, M Vorobiov, K Grabianska, M Zajac, M Iwinska, ...
Journal of Applied Physics 129 (9), 2021
Mandates: US National Science Foundation, National Science Centre, Poland
Dual nature of the acceptor in GaN: Evidence from photoluminescence
MA Reshchikov, M Vorobiov, O Andrieiev, DO Demchenko, B McEwen, ...
Physical Review B 108 (7), 075202, 2023
Mandates: US National Science Foundation
Photoluminescence from GaN implanted with Be and F
MA Reshchikov, O Andrieiev, M Vorobiov, DO Demchenko, B McEwen, ...
physica status solidi (b) 260 (9), 2300131, 2023
Mandates: US National Science Foundation
Thermal annealing of GaN implanted with Be
MA Reshchikov, O Andrieiev, M Vorobiov, D Ye, DO Demchenko, ...
Journal of Applied Physics 131 (12), 2022
Mandates: US National Science Foundation, National Science Centre, Poland
Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition
MA Reshchikov, M Vorobiov, O Andrieiev, B McEwen, E Rocco, V Meyers, ...
physica status solidi (b) 260 (8), 2200487, 2023
Mandates: US National Science Foundation
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