| 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped -Ga2O3 MOSFETs AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ... IEEE Electron Device Letters 37 (7), 902-905, 2016 | 623 | 2016 |
| Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates M Baldini, M Albrecht, A Fiedler, K Irmscher, R Schewski, G Wagner ECS Journal of Solid State Science and Technology 6 (2), Q3040, 2016 | 320 | 2016 |
| Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ... Journal of Materials Science 51, 3650-3656, 2016 | 176 | 2016 |
| Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ... Apl Materials 7 (2), 2019 | 124 | 2019 |
| Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model R Schewski, M Baldini, K Irmscher, A Fiedler, T Markurt, B Neuschulz, ... Journal of Applied Physics 120 (22), 2016 | 122 | 2016 |
| Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy A Fiedler, R Schewski, M Baldini, Z Galazka, G Wagner, M Albrecht, ... Journal of Applied Physics 122 (16), 2017 | 119 | 2017 |
| Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions Z Galazka, K Irmscher, R Schewski, IM Hanke, M Pietsch, S Ganschow, ... Journal of Crystal Growth 529, 125297, 2020 | 116 | 2020 |
| Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al Z Galazka, S Ganschow, A Fiedler, R Bertram, D Klimm, K Irmscher, ... Journal of Crystal Growth 486, 82-90, 2018 | 111 | 2018 |
| Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals Z Galazka, S Ganschow, R Schewski, K Irmscher, D Klimm, ... APL Materials 7 (2), 2019 | 110 | 2019 |
| Static dielectric constant of β-Ga2O3 perpendicular to the principal planes (100),(010), and (001) A Fiedler, R Schewski, Z Galazka, K Irmscher ECS Journal of Solid State Science and Technology 8 (7), Q3083, 2019 | 98 | 2019 |
| Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE S Bin Anooz, R Grüneberg, C Wouters, R Schewski, M Albrecht, A Fiedler, ... Applied Physics Letters 116 (18), 2020 | 96 | 2020 |
| Suppressing a Charge Density Wave by Changing Dimensionality in the Ferecrystalline Compounds ([SnSe]1.15)1(VSe2)n with n = 1, 2, 3, 4 M Falmbigl, A Fiedler, RE Atkins, SF Fischer, DC Johnson Nano Letters 15 (2), 943-948, 2015 | 56 | 2015 |
| Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE SB Anooz, R Grüneberg, TS Chou, A Fiedler, K Irmscher, C Wouters, ... Journal of Physics D: Applied Physics 54 (3), 034003, 2020 | 50 | 2020 |
| The anisotropic quasi-static permittivity of single-crystal β-Ga2O3 measured by terahertz spectroscopy P Gopalan, S Knight, A Chanana, M Stokey, P Ranga, MA Scarpulla, ... Applied Physics Letters 117 (25), 2020 | 47 | 2020 |
| Bulk β-Ga2O3 single crystals doped with Ce, Ce+ Si, Ce+ Al, and Ce+ Al+ Si for detection of nuclear radiation Z Galazka, R Schewski, K Irmscher, W Drozdowski, ME Witkowski, ... Journal of Alloys and Compounds 818, 152842, 2020 | 45 | 2020 |
| Melt growth and properties of bulk BaSnO3 single crystals Z Galazka, R Uecker, K Irmscher, D Klimm, R Bertram, A Kwasniewski, ... Journal of Physics: Condensed Matter 29 (7), 075701, 2016 | 45 | 2016 |
| Synthesis and Systematic Trends in Structure and Electrical Properties of [(SnSe)1.15]m(VSe2)1, m = 1, 2, 3, and 4 R Atkins, M Dolgos, A Fiedler, C Grosse, SF Fischer, SP Rudin, ... Chemistry of Materials 26 (9), 2862-2872, 2014 | 44 | 2014 |
| Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ... Applied Physics Letters 119 (12), 2021 | 31 | 2021 |
| Si doping in MOCVD grown (010) β-(AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, L Meng, A Fiedler, HL Huang, AT Neal, ... Journal of Applied Physics 131 (14), 2022 | 25 | 2022 |
| Bulk single crystals and physical properties of β-(AlxGa1− x) 2O3 (x= 0–0.35) grown by the Czochralski method Z Galazka, A Fiedler, A Popp, S Ganschow, A Kwasniewski, P Seyidov, ... Journal of Applied Physics 133 (3), 2023 | 24 | 2023 |
Martin AlbrechtLeibniz-Institut für KristallzüchtungVerified email at ikz-berlin.de
