| Trapping effects and microwave power performance in AlGaN/GaN HEMTs SC Binari, K Ikossi, JA Roussos, W Kruppa, D Park, HB Dietrich, ... IEEE Transactions on Electron Devices 48 (3), 465-471, 2001 | 837 | 2001 |
| Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/plasma treatment prior to SiN passivation AP Edwards, JA Mittereder, SC Binari, DS Katzer, DF Storm, JA Roussos IEEE electron device letters 26 (4), 225-227, 2005 | 178 | 2005 |
| Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress JA Mittereder, SC Binari, PB Klein, JA Roussos, DS Katzer, DF Storm, ... Applied Physics Letters 83 (8), 1650-1652, 2003 | 117 | 2003 |
| Full-wafer characterization of AlGaN/GaN HEMTs on free-standing CVD diamond substrates KD Chabak, JK Gillespie, V Miller, A Crespo, J Roussos, M Trejo, ... IEEE electron device letters 31 (2), 99-101, 2009 | 98 | 2009 |
| /InAlN/AlN/GaN MIS-HEMTs With 10.8 Johnson Figure of Merit BP Downey, DJ Meyer, DS Katzer, JA Roussos, M Pan, X Gao IEEE electron device letters 35 (5), 527-529, 2014 | 89 | 2014 |
| High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ... IEEE electron device letters 34 (2), 199-201, 2013 | 69 | 2013 |
| Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping DF Storm, DS Katzer, SC Binari, ER Glaser, BV Shanabrook, JA Roussos Applied physics letters 81 (20), 3819-3821, 2002 | 56 | 2002 |
| Ion induced charge collection in GaAs MESFETs A Campbell, A Knudson, D McMorrow, W Anderson, J Roussos, S Espy, ... IEEE Transactions on Nuclear Science 36 (6), 2292-2299, 1989 | 55 | 1989 |
| X-band power and linearity performance of compositionally graded AlGaN channel transistors SH Sohel, A Xie, E Beam, H Xue, JA Roussos, T Razzak, S Bajaj, Y Cao, ... IEEE Electron Device Letters 39 (12), 1884-1887, 2018 | 45 | 2018 |
| Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ... IEEE Electron Device Letters 35 (10), 1013-1015, 2014 | 43 | 2014 |
| AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization DF Storm, DS Katzer, JA Roussos, JA Mittereder, R Bass, SC Binari, ... Journal of crystal growth 301, 429-433, 2007 | 43 | 2007 |
| MBE growth of AlGaN/GaN HEMTs with high power density DS Katzer, SC Binari, DF Storm, JA Roussos, BV Shanabrook, ER Glaser Electronics Letters 38 (25), 1, 2002 | 38 | 2002 |
| Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs DS Katzer, DF Storm, SC Binari, JA Roussos, BV Shanabrook, ER Glaser Journal of crystal growth 251 (1-4), 481-486, 2003 | 36 | 2003 |
| AlN/GaN insulated gate HEMTs with HfO2 gate dielectric DA Deen, SC Binari, DF Storm, DS Katzer, JA Roussos, JC Hackley, ... Electronics letters 45 (8), 423-424, 2009 | 29 | 2009 |
| Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates DF Storm, JA Roussos, DS Katzer, JA Mittereder, R Bass, SC Binari, ... Electronics Letters 42 (11), 663-665, 2006 | 29 | 2006 |
| Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes TA Growden, DF Storm, EM Cornuelle, ER Brown, W Zhang, BP Downey, ... Applied Physics Letters 116 (11), 2020 | 28 | 2020 |
| Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates DF Storm, DS Katzer, JA Roussos, JA Mittereder, R Bass, SC Binari, ... Journal of crystal growth 305 (2), 340-345, 2007 | 25 | 2007 |
| Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures DF Storm, DS Katzer, DA Deen, R Bass, DJ Meyer, JA Roussos, SC Binari, ... Solid-state electronics 54 (11), 1470-1473, 2010 | 24 | 2010 |
| Epitaxial single-crystal ScAlN on 4H-SiC for high-velocity, low-loss SAW devices VJ Gokhale, BP Downey, MT Hardy, EN Jin, JA Roussos, DJ Meyer 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems …, 2020 | 21 | 2020 |
| Photoionisation spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy PB Klein, JA Mittereder, SC Binari, JA Roussos, DS Katzer, DF Storm Electronics Letters 39 (18), 1, 2003 | 19 | 2003 |
