| Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations R Vidya, P Ravindran, H Fjellvåg, BG Svensson, E Monakhov, ... Physical Review B—Condensed Matter and Materials Physics 83 (4), 045206, 2011 | 210 | 2011 |
| Annealing behavior between room temperature and 2000 C of deep level defects in electron-irradiated n-type 4H silicon carbide G Alfieri, EV Monakhov, BG Svensson, MK Linnarsson Journal of applied physics 98 (4), 2005 | 147 | 2005 |
| Zinc oxide: bulk growth, role of hydrogen and Schottky diodes EV Monakhov, AY Kuznetsov, BG Svensson Journal of Physics D: Applied Physics 42 (15), 153001, 2009 | 98 | 2009 |
| Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si EV Monakhov, BS Avset, A Hallén, BG Svensson Physical Review B 65 (23), 233207, 2002 | 88 | 2002 |
| Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling VP Markevich, AR Peaker, SB Lastovskii, LI Murin, J Coutinho, VJB Torres, ... Physical Review B—Condensed Matter and Materials Physics 80 (23), 235207, 2009 | 87 | 2009 |
| Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon M Mikelsen, EV Monakhov, G Alfieri, BS Avset, BG Svensson Physical Review B—Condensed Matter and Materials Physics 72 (19), 195207, 2005 | 84 | 2005 |
| Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO R Schifano, EV Monakhov, U Grossner, BG Svensson Applied Physics Letters 91 (19), 2007 | 81 | 2007 |
| Vacancy clustering and acceptor activation in nitrogen-implanted ZnO TM Børseth, F Tuomisto, JS Christensen, EV Monakhov, BG Svensson, ... Physical Review B—Condensed Matter and Materials Physics 77 (4), 045204, 2008 | 80 | 2008 |
| Thin films of In2O3 by atomic layer deposition using In (acac) 3 O Nilsen, R Balasundaraprabhu, EV Monakhov, N Muthukumarasamy, ... Thin Solid Films 517 (23), 6320-6322, 2009 | 73 | 2009 |
| Identification of substitutional Li in -type ZnO and its role as an acceptor KM Johansen, A Zubiaga, I Makkonen, F Tuomisto, PT Neuvonen, ... Physical Review B—Condensed Matter and Materials Physics 83 (24), 245208, 2011 | 70 | 2011 |
| Lithium and electrical properties of ZnO L Vines, EV Monakhov, R Schifano, W Mtangi, FD Auret, BG Svensson Journal of Applied Physics 107 (10), 2010 | 68 | 2010 |
| Evidence for identification of the divacancy-oxygen center in Si G Alfieri, EV Monakhov, BS Avset, BG Svensson Physical Review B 68 (23), 233202, 2003 | 68 | 2003 |
| Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films A Thøgersen, M Rein, E Monakhov, J Mayandi, S Diplas Journal of Applied Physics 109 (11), 2011 | 67 | 2011 |
| Effect of heat treatment on ITO film properties and ITO/p-Si interface R Balasundaraprabhu, EV Monakhov, N Muthukumarasamy, O Nilsen, ... Materials Chemistry and Physics 114 (1), 425-429, 2009 | 67 | 2009 |
| Development of radiation tolerant semiconductor detectors for the Super-LHC M Moll, J Adey, A Al-Ajili, G Alfieri, PP Allport, M Artuso, S Assouak, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005 | 67 | 2005 |
| Radiation-hard semiconductor detectors for SuperLHC M Bruzzi, J Adey, A Al-Ajili, P Alexandrov, G Alfieri, PP Allport, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005 | 65 | 2005 |
| Disorder-induced ordering in gallium oxide polymorphs A Azarov, C Bazioti, V Venkatachalapathy, P Vajeeston, E Monakhov, ... Physical Review Letters 128 (1), 015704, 2022 | 63 | 2022 |
| The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells? LI Murin, EA Tolkacheva, VP Markevich, AR Peaker, B Hamilton, ... Applied Physics Letters 98 (18), 2011 | 63 | 2011 |
| Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO TM Børseth, F Tuomisto, JS Christensen, W Skorupa, EV Monakhov, ... Physical Review B—Condensed Matter and Materials Physics 74 (16), 161202, 2006 | 62 | 2006 |
| Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide G Alfieri, EV Monakhov, BG Svensson, A Hallén Journal of applied physics 98 (11), 2005 | 62 | 2005 |