Enrique Miranda

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Citations	7661	3629
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Jordi SuñéProfessor, IEEE Fellow, Universitat Autònoma de BarcelonaVerified email at uab.cat
Francesca Campabadal SeguraInstitut de Microelectronica de Barcelona, IMB-CNM, CSICVerified email at imb-cnm.csic.es
David JiménezProfessor at UAB (Universitat Autònoma de Barcelona)Verified email at uab.es
Mireia Bargalló GonzalezInstitut de Microelectrònica de Barcelona IMB-CNM (CSIC)Verified email at csic.es
Fernando Leonel AguirreSenior Device Engineer, Intrinsic Semiconductor Technologies Ltd.Verified email at intrinsicsemi.com
Mario LanzaIEEE Fellow | Associate Professor at National University of SingaporeVerified email at kaust.edu.sa
Christian WengerIHP GmbH - Leibniz institute for innovative microelectronicsVerified email at ihp-microelectronics.com
Juan B. RoldánDepartment of Electronics and Computer Technology. Granada University (Spain)Verified email at ugr.es
pk hurleyTyndall National Institute, University College CorkVerified email at tyndall.ie
Francisco Jiménez-MolinosUniversidad de GranadaVerified email at ugr.es
Felix PalumboConsejo de Investigaciones Cientificas y Tecnicas - UTNVerified email at conicet.gov.ar
Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu BerlinVerified email at ikz-berlin.de
Karim CherkaouiTyndall National InstituteVerified email at tyndall.ie
J. Muñoz-GorrizPhD student, Universitat Autonoma de BacelonaVerified email at uab.cat
SALVADOR DUEÑASProfessor, University of ValladolidVerified email at uva.es
Helena CastánCatedrática de Universidad, Universidad de ValladolidVerified email at ele.uva.es
Marco A. VillenaUniversity of GranadaVerified email at ugr.es
Adnan MehonicAssociate Professor, University College LondonVerified email at ucl.ac.uk
Tony KenyonProfessor of Nanoelectronic & Nanophotonic Materials, UCLVerified email at ee.ucl.ac.uk
Sebastian PazosPhysical Science and Engineering, King Abdullah University of Science and TechnologyVerified email at kaust.edu.sa

Enrique Miranda

Universitat Autonoma de Barcelona

Verified email at uab.cat

microelectronics


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Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019	652	2019
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ... Advanced functional materials 27 (10), 1604811, 2017	336	2017
Impact of Temperature on the Resistive Switching Behavior of Embedded -Based RRAM Devices C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ... IEEE transactions on electron devices 58 (9), 3124-3131, 2011	297	2011
Model for the Resistive Switching Effect in MIM Structures Based on the Transmission Properties of Narrow Constrictions EA Miranda, C Walczyk, C Wenger, T Schroeder IEEE Electron Device Letters 31 (6), 609-611, 2010	219	2010
Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries M Lanza, G Bersuker, M Porti, E Miranda, M Nafría, X Aymerich Applied Physics Letters 101 (19), 2012	209	2012
Silicon Oxide (SiO_x): A Promising Material for Resistance Switching? A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ... Advanced materials 30 (43), 1801187, 2018	208	2018
Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021	194	2021
Quantum-size effects in hafnium-oxide resistive switching S Long, X Lian, C Cagli, X Cartoixa, R Rurali, E Miranda, D Jiménez, ... Applied Physics Letters 102 (18), 2013	186	2013
Analytic model for the surface potential and drain current in negative capacitance field-effect transistors D Jimenez, E Miranda, A Godoy IEEE Transactions on Electron Devices 57 (10), 2405-2409, 2010	170	2010
Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO₂-Based RRAM S Long, L Perniola, C Cagli, J Buckley, X Lian, E Miranda, F Pan, M Liu, ... Scientific reports 3 (1), 2929, 2013	169	2013
Electron transport through broken down ultra-thin SiO2 layers in MOS devices E Miranda, J Sune Microelectronics Reliability 44 (1), 1-23, 2004	155	2004
A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown S Long, X Lian, C Cagli, L Perniola, E Miranda, M Liu, J Suñé IEEE electron device letters 34 (8), 999-1001, 2013	139	2013
Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices S Long, X Lian, T Ye, C Cagli, L Perniola, E Miranda, M Liu, J Sune IEEE electron device letters 34 (5), 623-625, 2013	131	2013
Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/films E Miranda, J Suñé 2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001	127	2001
Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics E Miranda, J Suñé, R Rodríguez, M Nafria, X Aymerich, L Fonseca, ... IEEE Transactions on Electron Devices 47 (1), 82-89, 2000	127	2000
Hardware implementation of memristor-based artificial neural networks F Aguirre, A Sebastian, M Le Gallo, W Song, T Wang, JJ Yang, W Lu, ... Nature communications 15 (1), 1974, 2024	109	2024
Variability in resistive memories JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ... Advanced Intelligent Systems 5 (6), 2200338, 2023	100	2023
Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms? J Suñé, G Mura, E Miranda IEEE Electron Device Letters 21 (4), 167-169, 2000	97	2000
Post soft breakdown conduction in SiO/sub 2/gate oxides J Sune, E Miranda International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000	96	2000
A function-fit model for the soft breakdown failure mode E Miranda, J Sune, R Rodriguez, M Nafria, X Aymerich IEEE Electron Device Letters 20 (6), 265-267, 1999	94	1999

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