| Room-temperature polariton lasing in semiconductor microcavities S Christopoulos, GBH Von Högersthal, AJD Grundy, PG Lagoudakis, ... Physical review letters 98 (12), 126405, 2007 | 1227 | 2007 |
| Current status of AlInN layers lattice-matched to GaN for photonics and electronics R Butté, JF Carlin, E Feltin, M Gonschorek, S Nicolay, G Christmann, ... Journal of Physics D: Applied Physics 40 (20), 6328, 2007 | 416 | 2007 |
| Spontaneous polarization buildup in a room-temperature polariton laser JJ Baumberg, AV Kavokin, S Christopoulos, AJD Grundy, R Butté, ... Physical Review Letters 101 (13), 136409, 2008 | 297 | 2008 |
| Effect of hydrogen on the electronic properties of In x Ga 1− x As 1− y N y/GaAs quantum wells AF A. Polimeni, G. Baldassarri H. v., H. M. Bissiri, M. Capizzi, M. Fischer ... Physical Review B 63 (20), 201304, 2001 | 109 | 2001 |
| Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure E Feltin, G Christmann, J Dorsaz, A Castiglia, JF Carlin, R Butté, ... Electronics Letters 43 (17), 924-926, 2007 | 82 | 2007 |
| Early manifestation of localization effects in diluted Ga (AsN) F Masia, A Polimeni, G Baldassarri Höger von Högersthal, M Bissiri, ... Applied physics letters 82 (25), 4474-4476, 2003 | 77 | 2003 |
| Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells G Baldassarri H. v. H, M Bissiri, A Polimeni, M Capizzi, M Fischer, ... Applied Physics Letters 78 (22), 3472-3474, 2001 | 77 | 2001 |
| Optical evidence of polaron interaction in InAs/GaAs quantum dots M Bissiri, GBH von Högersthal, AS Bhatti, M Capizzi, A Frova, P Frigeri, ... Physical Review B 62 (7), 4642, 2000 | 75 | 2000 |
| Fine structure in the excitonic emission of quantum dot molecules G Ortner, I Yugova, GBH Von Högersthal, A Larionov, H Kurtze, ... Physical Review B—Condensed Matter and Materials Physics 71 (12), 125335, 2005 | 63 | 2005 |
| Role of hydrogen in III–N–V compound semiconductors A Polimeni, GBH von Högersthal, M Bissiri, M Capizzi, A Frova, M Fischer, ... Semiconductor science and technology 17 (8), 797, 2002 | 48 | 2002 |
| Magnetophotoluminescence studies of (inga)(asn)/gaas heterostructures GBH Von Högersthal, A Polimeni, F Masia, M Bissiri, M Capizzi, D Gollub, ... Physical Review B 67 (23), 233304, 2003 | 44 | 2003 |
| High resolution spectroscopy of yellow 1S excitons in Cu2O D Fröhlich, G Dasbach, GBH von Högersthal, M Bayer, R Klieber, D Suter, ... Solid State Communications 134 (1-2), 139-142, 2005 | 38 | 2005 |
| Tunable variation of the electron effective mass and exciton radius in hydrogenated A Polimeni, GBH von Högersthal, F Masia, A Frova, M Capizzi, S Sanna, ... Physical Review B 69 (4), 041201, 2004 | 37 | 2004 |
| Reduced temperature dependence of the band gap in investigated with photoluminescence A Polimeni, M Bissiri, A Augieri, GBH Von Högersthal, M Capizzi, ... Physical Review B 65 (23), 235325, 2002 | 33 | 2002 |
| Quantum size and shape effects on the excited states of quantum dots M Bissiri, GBH Von Högersthal, M Capizzi, P Frigeri, S Franchi Physical Review B 64 (24), 245337, 2001 | 33 | 2001 |
| Hydrogen-induced passivation of nitrogen in M Bissiri, GBH von Högersthal, A Polimeni, V Gaspari, F Ranalli, ... Physical Review B 65 (23), 235210, 2002 | 31 | 2002 |
| High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells M Bissiri, V Gaspari, A Polimeni, G Baldassarri Höger von Högersthal, ... Applied Physics Letters 79 (16), 2585-2587, 2001 | 31 | 2001 |
| Role of N clusters in band-gap reduction M Bissiri, GBH von Högersthal, A Polimeni, M Capizzi, D Gollub, ... Physical Review B 66 (3), 033311, 2002 | 22 | 2002 |
| Single carrier localization in investigated by magnetophotoluminescence A Polimeni, F Masia, A Vinattieri, G Baldassarri Höger von Högersthal, ... Applied physics letters 84 (13), 2295-2297, 2004 | 20 | 2004 |
| Polaron interaction in InAs/GaAs quantum dots and resonant photoluminescence M Bissiri, G Baldassarri HvH, M Capizzi, VM Fomin, VN Gladilin, ... physica status solidi (b) 224 (3), 639-642, 2001 | 15 | 2001 |
