| Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures JL Young, MA Steiner, H Döscher, RM France, JA Turner, TG Deutsch Nature Energy 2 (4), 1-8, 2017 | 450 | 2017 |
| Enhancement of the zero phonon line emission from a single nitrogen vacancy center in a nanodiamond via coupling to a photonic crystal cavity J Wolters, AW Schell, G Kewes, N Nüsse, M Schoengen, H Döscher, ... Applied Physics Letters 97 (14), 2010 | 303 | 2010 |
| Sunlight absorption in water–efficiency and design implications for photoelectrochemical devices H Döscher, JF Geisz, TG Deutsch, JA Turner Energy & Environmental Science 7 (9), 2951-2956, 2014 | 227 | 2014 |
| Solar-to-hydrogen efficiency: shining light on photoelectrochemical device performance H Döscher, JL Young, JF Geisz, JA Turner, TG Deutsch Energy & Environmental Science 9 (1), 74-80, 2016 | 137 | 2016 |
| Emerging Postsynthetic Improvements of BiVO4 Photoanodes for Solar Water Splitting B Lamm, BJ Trzesniewski, H Doscher, WA Smith, M Stefik ACS Energy Letters 3 (1), 112-124, 2017 | 126 | 2017 |
| In situ reflection anisotropy spectroscopy analysis of heteroepitaxial GaP films grown on Si (100) H Döscher, T Hannappel Journal of Applied Physics 107 (12), 2010 | 89 | 2010 |
| In situ verification of single-domain III-V on Si (100) growth via metal-organic vapor phase epitaxy H Döscher, T Hannappel, B Kunert, A Beyer, K Volz, W Stolz Applied Physics Letters 93 (17), 2008 | 85 | 2008 |
| Anomalous double-layer step formation on Si (100) in hydrogen process ambient S Brückner, H Döscher, P Kleinschmidt, O Supplie, A Dobrich, ... Physical Review B—Condensed Matter and Materials Physics 86 (19), 195310, 2012 | 67 | 2012 |
| Epitaxial III–V films and surfaces for photoelectrocatalysis H Döscher, O Supplie, MM May, P Sippel, C Heine, AG Muñoz, ... ChemPhysChem 13 (12), 2899-2909, 2012 | 62 | 2012 |
| Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory O Supplie, S Brückner, O Romanyuk, H Döscher, C Höhn, MM May, ... Physical Review B 90 (23), 235301, 2014 | 48 | 2014 |
| Surface preparation of Si (1 0 0) by thermal oxide removal in a chemical vapor environment H Döscher, S Brückner, A Dobrich, C Höhn, P Kleinschmidt, T Hannappel Journal of Crystal Growth 315 (1), 10-15, 2011 | 48 | 2011 |
| In situ investigation of hydrogen interacting with Si (100) S Brückner, H Döscher, P Kleinschmidt, T Hannappel Applied Physics Letters 98 (21), 2011 | 46 | 2011 |
| Indirect in situ characterization of Si (1 0 0) substrates at the initial stage of III–V heteroepitaxy H Döscher, O Supplie, S Brückner, T Hannappel, A Beyer, J Ohlmann, ... Journal of Crystal Growth 315 (1), 16-21, 2011 | 46 | 2011 |
| Energiespeicher-Roadmap (Update 2017)-Hochenergie-Batterien 2030+ und Perspektiven zukünftiger Batterietechnologien A Thielmann, C Neef, T Hettesheimer, H Döscher, M Wietschel, J Tübke Fraunhofer-Institut für System-und Innovationsforschung ISI, 2017 | 43 | 2017 |
| Domain-sensitive in situ observation of layer-by-layer removal at Si (100) in H2 ambient S Brückner, P Kleinschmidt, O Supplie, H Döscher, T Hannappel New Journal of Physics 15 (11), 113049, 2013 | 40 | 2013 |
| III–V on silicon: Observation of gallium phosphide anti-phase disorder by low-energy electron microscopy H Döscher, B Borkenhagen, G Lilienkamp, W Daum, T Hannappel Surface science 605 (15-16), L38-L41, 2011 | 40 | 2011 |
| Graphene Roadmap Briefs (No. 2): industrialization status and prospects 2020 H Döscher, T Schmaltz, C Neef, A Thielmann, T Reiss 2D Materials 8 (2), 022005, 2021 | 39 | 2021 |
| In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si (100) H Döscher, B Kunert, A Beyer, O Supplie, K Volz, W Stolz, T Hannappel Journal of Vacuum Science & Technology B 28 (4), C5H1-C5H6, 2010 | 36 | 2010 |
| Si (100) surfaces in a hydrogen-based process ambient H Döscher, A Dobrich, S Brückner, P Kleinschmidt, T Hannappel Applied Physics Letters 97 (15), 2010 | 32 | 2010 |
| Investigation of oxide removal from Si (1 0 0) substrates in dependence of the MOVPE process gas ambient H Döscher, S Brückner, T Hannappel Journal of crystal growth 318 (1), 563-569, 2011 | 31 | 2011 |
Sebastian BruecknerFerdinand-Braun-Institut BerlinVerified email at fbh-berlin.de
