| Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection A Nishikawa, T Kawasaki, N Furukawa, Y Terai, Y Fujiwara Applied Physics Express 2 (7), 071004, 2009 | 276 | 2009 |
| Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy A Nishikawa, N Furukawa, T Kawasaki, Y Terai, Y Fujiwara Applied Physics Letters 97 (5), 2010 | 106 | 2010 |
| Eu luminescence center created by Mg codoping in Eu-doped GaN D Lee, A Nishikawa, Y Terai, Y Fujiwara Applied Physics Letters 100 (17), 2012 | 76 | 2012 |
| Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers N Woodward, A Nishikawa, Y Fujiwara, V Dierolf Optical Materials 33 (7), 1050-1054, 2011 | 60 | 2011 |
| Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center N Woodward, J Poplawsky, B Mitchell, A Nishikawa, Y Fujiwara, V Dierolf Applied Physics Letters 98 (1), 2011 | 57 | 2011 |
| Lattice site location of optical centers in GaN: Eu light emitting diode material grown by organometallic vapor phase epitaxy K Lorenz, E Alves, IS Roqan, KP O’Donnell, A Nishikawa, Y Fujiwara, ... Applied Physics Letters 97 (11), 2010 | 48 | 2010 |
| High critical electric field exceeding 8 MV/cm measured using an AlGaN p–i–n vertical conducting diode on n-SiC substrate A Nishikawa, K Kumakura, T Makimoto Japanese journal of applied physics 46 (4S), 2316, 2007 | 46 | 2007 |
| Effect of nitrogen on the optical and transport properties of Ga0. 48In0. 52NyP1− y grown on GaAs (001) substrates YG Hong, A Nishikawa, CW Tu Applied physics letters 83 (26), 5446-5448, 2003 | 45 | 2003 |
| High critical electric field of AlxGa1− xN pin vertical conducting diodes on n-SiC substrates A Nishikawa, K Kumakura, T Akasaka, T Makimoto Applied physics letters 88 (17), 2006 | 40 | 2006 |
| Growth and characterization of InAsN alloy films and quantum wells M Kuroda, A Nishikawa, R Katayama, K Onabe Journal of crystal growth 278 (1-4), 254-258, 2005 | 36 | 2005 |
| Electroluminescence properties of Eu‐doped GaN‐based red light‐emitting diode by OMVPE A Nishikawa, T Kawasaki, N Furukawa, Y Terai, Y Fujiwara physica status solidi (a) 207 (6), 1397-1399, 2010 | 31 | 2010 |
| MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (0 0 1) A Nishikawa, R Katayama, K Onabe, Y Shiraki Journal of crystal growth 251 (1-4), 427-431, 2003 | 30 | 2003 |
| Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy A Nishikawa, N Furukawa, T Kawasaki, Y Terai, Y Fujiwara Optical Materials 33 (7), 1071-1074, 2011 | 28 | 2011 |
| Structural phase transitions and equations of state of Se and Te under high pressure A Nishikawa, K Niizeki, K Shindo Japanese journal of applied physics 32 (S1), 48, 1993 | 21 | 1993 |
| Atmospheric pressure growth of Eu‐doped GaN by organometallic vapor phase epitaxy N Furukawa, A Nishikawa, T Kawasaki, Y Terai, Y Fujiwara physica status solidi (a) 208 (2), 445-448, 2011 | 18 | 2011 |
| Effect of growth temperature on Eu‐doped GaN layers grown by organometallic vapor phase epitaxy T Kawasaki, A Nishikawa, N Furukawa, Y Terai, Y Fujiwara physica status solidi c 7 (7‐8), 2040-2042, 2010 | 17 | 2010 |
| Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates A Nishikawa, K Kumakura, T Akasaka, T Makimoto Superlattices and Microstructures 40 (4-6), 332-337, 2006 | 17 | 2006 |
| Temperature dependence of optical properties of quantum dots grown on GaAs (001) A Nishikawa, YG Hong, CW Tu Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 17 | 2004 |
| Development of a neural probe integrated with high-efficiency MicroLEDs for in vivo application H Yasunaga, T Takagi, D Shinko, Y Nakayama, Y Takeuchi, A Nishikawa, ... Japanese Journal of Applied Physics 60 (1), 016503, 2020 | 15 | 2020 |
| Band structure and structural stability of the high-pressure phases of the group VIb elements A Nishikawa, K Niizeki, K Shindo, K Ohno Journal of Physics and Chemistry of Solids 56 (3-4), 551-554, 1995 | 15 | 1995 |