| Equilibrium molecular dynamics (MD) simulation study of thermal conductivity of graphene nanoribbon: a comparative study on MD potentials AI Khan, IA Navid, M Noshin, HMA Uddin, FF Hossain, S Subrina Electronics 4 (4), 1109-1124, 2015 | 84 | 2015 |
| Impact of vacancies on the thermal conductivity of graphene nanoribbons: A molecular dynamics simulation study M Noshin, AI Khan, IA Navid, HM Uddin, S Subrina Aip Advances 7 (1), 2017 | 56 | 2017 |
| Thermal transport characterization of hexagonal boron nitride nanoribbons using molecular dynamics simulation AI Khan, IA Navid, M Noshin, S Subrina AIP Advances 7 (10), 2017 | 43 | 2017 |
| Thermal transport characterization of stanene/silicene heterobilayer and stanene bilayer nanostructures M Noshin, AI Khan, S Subrina Nanotechnology, 2018 | 25 | 2018 |
| From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices K Woo, Z Bian, M Noshin, RP Martinez, M Malakoutian, B Shankar, ... Journal of Physics: Materials 7 (2), 022003, 2024 | 23 | 2024 |
| Modeling and computation of thermal and optical properties in silicene supported honeycomb bilayer and heterobilayer nanostructures M Noshin, AI Khan, R Chakraborty, S Subrina Materials Science in Semiconductor Processing 129, 105776, 2021 | 14 | 2021 |
| A molecular dynamics study on thermal conductivity of armchair graphene nanoribbon AI Khan, IA Navid, FF Hossain, M Noshin, S Subrina 2016 IEEE Region 10 Conference (TENCON), 2775-2778, 2016 | 10 | 2016 |
| Cooling future system-on-chips with diamond inter-tiers M Malakoutian, A Kasperovich, D Rich, K Woo, C Perez, R Soman, ... Cell Reports Physical Science 4 (12), 2023 | 8 | 2023 |
| Demonstration of N-polar All-AlGaN High Electron Mobility Transistors with 375 mA/mm Drive Current M Noshin, R Soman, S Chowdhury IEEE Electron Device Letters 44 (7), 1072-1075, 2023 | 8 | 2023 |
| A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same M Noshin, R Soman, X Xu, S Chowdhury Semiconductor Science and Technology 37, 075018, 2022 | 6 | 2022 |
| 10 MHz-switching on GaN trench CAVET up to 300° C operation enabled by high channel mobility X Wen, B Shankar, K Lee, H Kasai, M Noshin, J Chun, Y Nakazato, ... IEEE Electron Device Letters 45 (4), 653-656, 2024 | 4 | 2024 |
| Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors M Noshin, X Wen, R Soman, X Xu, S Chowdhury Applied Physics Letter 123 (6), 062103, 2023 | 4 | 2023 |
| A study on MOCVD growth window for high quality N-polar GaN for vertical device applications R Soman, M Noshin, S Chowdhury Semiconductor Science and Technology 37 (9), 095003, 2022 | 4 | 2022 |
| Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN KJ Lee, Y Nakazato, J Chun, X Wen, C Meng, R Soman, M Noshin, ... Nanotechnology 33 (50), 505704, 2022 | 3 | 2022 |
| First experimental demonstration of monolithic bidirectional switch using GaN current aperture vertical electron transistor (CAVET) X Wen, H Kasai, K Lee, M Noshin, J Chun, S Chowdhury 2024 Device Research Conference (DRC), 1-2, 2024 | 2 | 2024 |
| A systematic study on the efficacy of low-temperature GaN regrown on p-GaN to suppress Mg out-diffusion KJ Lee, X Wen, Y Nakazato, J Chun, M Noshin, C Meng, S Chowdhury Frontiers in Materials 10, 1229036, 2023 | 2 | 2023 |
| Thermal transport in defected armchair graphene nanoribbon: a molecular dynamics study M Noshin, AI Khan, IA Navid, S Subrina TENCON 2017-2017 IEEE Region 10 Conference, 2600-2603, 2017 | 2 | 2017 |
| AlN: An engineered thermal material for 3D integrated circuits S Vaziri, C Perez, IM Datye, H Kwon, CF Hsu, ME Chen, M Noshin, ... Advanced Functional Materials 35 (1), 2402662, 2025 | 1 | 2025 |
| Monolithic Bidirectional GaN-on-GaN Vertical Transistor Technologies: Exploring Bidirectional CAVET for Next-Generation Switching Applications with Symmetrical Power Control X Wen, H Kasai, M Noshin, C Meng, S Chowdhury IEEE Electron Devices Magazine 2 (4), 36-41, 2025 | | 2025 |
| Wrap-Around Gate Delivering , Normally-Off, Dispersion-Free CAVETs with Record-High Gate Swing X Wen, H Kasai, K Fujita, T Yamasaki, T Sawada, M Noshin, C Meng, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
SAMIA SUBRINABangladesh University of Engineering and TechnologyVerified email at eee.buet.ac.bd