| Magnetic memory element and nonvolatile memory device D Saida, M Amano, Y Ohsawa, J Ito, H Yoda US Patent 8,716,817, 2014 | 154 | 2014 |
| Magnetic recording device and magnetic recording apparatus S Nakamura, H Morise, S Yanagi, D Saida, A Kikitsu US Patent 8,085,582, 2011 | 84 | 2011 |
| Magnetic recording element and nonvolatile memory device D Saida, M Amano, J Ito, Y Ohsawa, S Kashiwada, C Kamata, ... US Patent 8,488,375, 2013 | 55 | 2013 |
| Magnetic element and nonvolatile memory device D Saida, M Amano, J Ito, Y Ohsawa, S Kashiwada, C Kamata, T Daibou US Patent 8,576,616, 2013 | 50 | 2013 |
| Nonvolatile memory device D Saida, M Amano, T Nagasawa, Y Ohsawa, J Ito US Patent 8,737,122, 2014 | 44 | 2014 |
| Magnetic memory element and nonvolatile memory device D Saida, M Amano, H Imamura US Patent 9,025,368, 2015 | 43 | 2015 |
| Magnetoresistive element and magnetic memory T Daibou, M Amano, D Saida, J Ito, Y Ohsawa, C Kamata, S Kashiwada, ... US Patent 8,878,317, 2014 | 42 | 2014 |
| Magnetic memory element and nonvolatile memory device D Saida, M Amano, J Ito US Patent 8,582,355, 2013 | 37 | 2013 |
| Magnetic memory S Yanagi, Y Ohsawa, S Nakamura, D Saida, H Morise US Patent 8,077,509, 2011 | 37 | 2011 |
| Magnetic recording element and nonvolatile memory device D Saida, M Amano, J Ito, Y Ohsawa, S Kashiwada, C Kamata, T Daibou US Patent 8,508,979, 2013 | 35 | 2013 |
| Sub-3 ns pulse with sub-100 µA switching of 1x–2x nm perpendicular MTJ for high-performance embedded STT-MRAM towards sub-20 nm CMOS D Saida, S Kashiwada, M Yakabe, T Daibou, N Hase, M Fukumoto, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 32 | 2016 |
| Low power and high density STT-MRAM for embedded cache memory using advanced perpendicular MTJ integrations and asymmetric compensation techniques K Ikegami, H Noguchi, C Kamata, M Amano, K Abe, K Kushida, ... 2014 IEEE International Electron Devices Meeting, 28.1. 1-28.1. 4, 2014 | 32 | 2014 |
| Method of manufacturing magnetic memory Y Ohsawa, S Takahashi, J Ito, D Saida, K Suguro, H Yoda US Patent 8,716,034, 2014 | 32 | 2014 |
| Magnetoresistive element and magnetic memory T Daibou, M Amano, D Saida, J Ito, Y Ohsawa, C Kamata, S Kashiwada, ... US Patent 9,299,918, 2016 | 29 | 2016 |
| Magnetic memory element and memory device D Saida, M Amano, J Ozeki, N Shimomura US Patent 9,818,464, 2017 | 28 | 2017 |
| Magnetization switching by current and microwaves T Taniguchi, D Saida, Y Nakatani, H Kubota Physical Review B 93 (1), 014430, 2016 | 27 | 2016 |
| Magnetic memory N Shimomura, E Kitagawa, C Kamata, M Amano, Y Ohsawa, D Saida, ... US Patent 8,994,131, 2015 | 27 | 2015 |
| - to -nm perpendicular MTJ Switching at Sub-3-ns Pulses Below A for High-Performance Embedded STT-MRAM for Sub-20-nm CMOS D Saida, S Kashiwada, M Yakabe, T Daibou, M Fukumoto, S Miwa, ... IEEE Transactions on Electron Devices 64 (2), 427-431, 2016 | 25 | 2016 |
| Magnetic memory element D Saida, M Amano, J Ito US Patent 8,928,055, 2015 | 25 | 2015 |
| Memory system including non-volatile memory of which access speed is electrically controlled D Saida, S Takeda, H Noguchi, K Abe US Patent 9,959,919, 2018 | 21 | 2018 |
