| Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K Y Kamihara, T Watanabe, M Hirano, H Hosono Journal of the American Chemical Society 130 (11), 3296-3297, 2008 | 10974* | 2008 |
| Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono nature 432 (7016), 488-492, 2004 | 9154 | 2004 |
| P-type electrical conduction in transparent thin films of CuAlO2 H Kawazoe, M Yasukawa, H Hyodo, M Kurita, H Yanagi, H Hosono Nature 389 (6654), 939-942, 1997 | 4130* | 1997 |
| Amorphous Oxide And Thin Film Transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent App. 10/592,431, 2007 | 4002 | 2007 |
| Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film H Hosono, H Ota, M Orita, K Ueda, M Hirano, T Kamiya US Patent 7,061,014, 2006 | 3959 | 2006 |
| Display H Kumomi, H Hosono, T Kamiya, K Nomura US Patent 7,791,072, 2010 | 3918 | 2010 |
| Integrated circuits utilizing amorphous oxides K Abe, H Hosono, T Kamiya, K Nomura US Patent 7,863,611, 2011 | 3886 | 2011 |
| Light-emitting device T Den, T Iwasaki, H Hosono, T Kamiya, K Nomura US Patent 7,872,259, 2011 | 3881 | 2011 |
| Amorphous oxide and field effect transistor M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura US Patent App. 11/269,600, 2006 | 3873 | 2006 |
| Field effect transistor M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura US Patent 7,868,326, 2011 | 3866 | 2011 |
| Field effect transistor manufacturing method H Yabuta, M Sano, T Iwasaki, H Hosono, T Kamiya, K Nomura US Patent 7,829,444, 2010 | 3862 | 2010 |
| Oxide thin film H Kawazoe, H Hosono, A Kudo, H Yanagi US Patent 6,294,274, 2001 | 3853 | 2001 |
| Sensor and image pickup device K Saito, H Hosono, T Kamiya, K Nomura US Patent 7,453,065, 2008 | 3844 | 2008 |
| Amorphous oxide and thin film transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent 10,032,930, 2018 | 3819 | 2018 |
| Amorphous oxide and thin film transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent App. 12/504,158, 2009 | 3816 | 2009 |
| LnCuO (S, Se, Te) monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film H Hosono, M Hirano, H Ota, M Orita, H Hiramatsu, K Ueda US Patent 7,323,356, 2008 | 3811 | 2008 |
| Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono Science 300 (5623), 1269-1272, 2003 | 3127 | 2003 |
| Present status of amorphous In–Ga–Zn–O thin-film transistors T Kamiya, K Nomura, H Hosono Science and Technology of Advanced Materials, 2010 | 2417* | 2010 |
| Superconductivity at 43 K in an iron-based layered compound LaO1-xFxFeAs H Takahashi, K Igawa, K Arii, Y Kamihara, M Hirano, H Hosono nature 453 (7193), 376-378, 2008 | 1675 | 2008 |
| Amorphous oxide semiconductors for high-performance flexible thin-film transistors K Nomura, A Takagi, T Kamiya, H Ohta, M Hirano, H Hosono Japanese journal of applied physics 45 (5S), 4303, 2006 | 1535 | 2006 |
Toshio KamiyaTokyo Institute of TechnologyDirección de correo verificada de msl.titech.ac.jp
