Effects of fin width on device performance and reliability of double-gate n-type FinFETs CL Lin, PH Hsiao, WK Yeh, HW Liu, SR Yang, YT Chen, KM Chen, ...
IEEE transactions on electron devices 60 (11), 3639-3644, 2013
49 2013 The Improvement of High- WK Yeh, YT Chen, FS Huang, CW Hsu, CY Chen, YK Fang, KJ Gan, ...
IEEE Transactions on Device and Materials Reliability 11 (1), 7-12, 2010
19 2010 The impact of oxide traps induced by SOI thickness on reliability of fully silicide metal-gate strained SOI MOSFET CL Lin, YT Chen, FS Huang, WK Yeh, CT Lin
IEEE electron device letters 31 (2), 165-167, 2010
11 2010 Effect of YT Chen, KM Chen, CL Lin, WK Yeh, GW Huang, CM Lai, YW Chen, ...
IEEE transactions on electron devices 58 (3), 812-818, 2011
5 2011 Impact of SOI thickness on FUSI-gate CESL CMOS performance and reliability YT Chen, KM Chen, WK Yeh, JS Yuan, FS Yeh
IEEE Transactions on Device and Materials Reliability 11 (1), 44-49, 2010
5 2010 Impact of Highly Compressive Interlayer-Dielectric- YT Chen, KM Chen, WS Liao, GW Huang, FS Huang
IEEE electron device letters 31 (12), 1368-1370, 2010
2 2010 Low-Frequency Noise Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Compressive Interlayer-Dielectric-SiNx Stressing Layer YT Chen, KM Chen, WS Liao, GW Huang, FS Huang
Japanese journal of applied physics 48 (4S), 04C042, 2009
1 2009 A Compact Transformer-Based Notch Filter Design in Standard 65nm CMOS Technology WL Chen, YS Shiao, KM Chen, GW Huang, YT Chen
2023 Asia-Pacific Microwave Conference (APMC), 140-142, 2023
2023 