Direct observation of a two-dimensional hole gas at oxide interfaces H Lee, N Campbell, J Lee, TJ Asel, TR Paudel, H Zhou, JW Lee, ...
Nature materials 17 (3), 231-236, 2018
208 2018 Optical signatures of deep level defects in Ga2O3 H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ...
Applied Physics Letters 112 (24), 2018
164 2018 Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
141 2019 Tailoring the electronic structure of covalently functionalized germanane via the interplay of ligand strain and electronegativity S Jiang, K Krymowski, T Asel, MQ Arguilla, ND Cultrara, E Yanchenko, ...
Chemistry of Materials 28 (21), 8071-8077, 2016
87 2016 Pulsed Power Performance of β -Ga₂O₃ MOSFETs at L-Band NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ...
IEEE Electron Device Letters 41 (7), 989-992, 2020
45 2020 Toward high voltage radio frequency devices in β-Ga2O3 N Moser, K Liddy, A Islam, N Miller, K Leedy, T Asel, S Mou, A Green, ...
Applied Physics Letters 117 (24), 2020
40 2020 γ-phase inclusions as common structural defects in alloyed β-(AlxGa1− x) 2O3 and doped β-Ga2O3 films CS Chang, N Tanen, V Protasenko, TJ Asel, S Mou, HG Xing, D Jena, ...
APL Materials 9 (5), 2021
38 2021 Controlled Si doping of β-Ga2O3 by molecular beam epitaxy JP McCandless, V Protasenko, BW Morell, E Steinbrunner, AT Neal, ...
Applied Physics Letters 121 (7), 2022
35 2022 Native point defect formation in flash sintered ZnO studied by depth-resolved cathodoluminescence spectroscopy H Gao, TJ Asel, JW Cox, Y Zhang, J Luo, LJ Brillson
Journal of Applied Physics 120 (10), 2016
34 2016 Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy TJ Asel, E Steinbrunner, J Hendricks, AT Neal, S Mou
Journal of Vacuum Science & Technology A 38 (4), 2020
29 2020 Identification of a functional point defect in D Lee, H Wang, BA Noesges, TJ Asel, J Pan, JW Lee, Q Yan, LJ Brillson, ...
Physical Review Materials 2 (6), 060403, 2018
24 2018 Near-nanoscale-resolved energy band structure of LaNiO3/La2/3Sr1/3MnO3/SrTiO3 heterostructures and their interfaces TJ Asel, H Gao, TJ Heinl, D Adkins, PM Woodward, J Hoffman, ...
Journal of Vacuum Science & Technology B 33 (4), 2015
17 2015 Uniform large-area growth of nanotemplated high-quality monolayer MoS2 JR Young, M Chilcote, M Barone, J Xu, J Katoch, YK Luo, S Mueller, ...
Applied Physics Letters 110 (26), 2017
14 2017 Influence of surface chemistry on water absorption in functionalized germanane TJ Asel, WLB Huey, B Noesges, E Molotokaite, SC Chien, Y Wang, ...
Chemistry of Materials 32 (4), 1537-1544, 2020
12 2020 High conductivity β-Ga2O3 formed by hot Si ion implantation A Sardar, T Isaacs-Smith, J Lawson, T Asel, RB Comes, JN Merrett, ...
Applied Physics Letters 121 (26), 2022
10 2022 Identification of Ge vacancies as electronic defects in methyl-and hydrogen-terminated germanane TJ Asel, E Yanchenko, X Yang, S Jiang, K Krymowski, Y Wang, A Trout, ...
Applied Physics Letters 113 (6), 2018
10 2018 Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time KR Gann, N Pieczulewski, CA Gorsak, K Heinselman, TJ Asel, ...
Journal of Applied Physics 135 (1), 2024
9 2024 Surface relaxation and rumpling of Sn-doped A Pancotti, TC Back, W Hamouda, M Lachheb, C Lubin, P Soukiassian, ...
Physical Review B 102 (24), 245306, 2020
9 2020 Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba, Sr) TiO3 ZQ Zeng, A Podpirka, SW Kirchoefer, TJ Asel, LJ Brillson
Applied Physics Letters 106 (18), 2015
7 2015 Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor Z Wen, X Zhai, C Lee, S Kosanovic, Y Kim, AT Neal, T Asel, S Mou, ...
Applied Physics Letters 124 (12), 2024
6 2024 