| Tin perovskite transistors and complementary circuits based on A-site cation engineering H Zhu, W Yang, Y Reo, G Zheng, S Bai, A Liu, YY Noh Nature Electronics 6 (9), 650-657, 2023 | 44 | 2023 |
| Ion migration induced unusual charge transport in tin halide perovskites T Roh, H Zhu, W Yang, A Liu, YY Noh ACS Energy Letters 8 (2), 957-962, 2023 | 25 | 2023 |
| Fluorinated organic a‐cation enabling high‐performance hysteresis‐free 2D/3D hybrid tin perovskite transistors W Yang, G Park, A Liu, HB Lee, JW Kang, H Zhu, YY Noh Advanced Functional Materials 33 (36), 2303309, 2023 | 20 | 2023 |
| Two-Dimensional Dion-Jacobson Tin Perovskite Transistors with Enhanced Ambient Stability W Park, Y Reo, W Yang, H Choi, S Jeon, B Lim, A Liu, H Zhu, YY Noh ACS Energy Letters 9 (5), 2436-2445, 2024 | 6 | 2024 |
| Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors W Yang, L Dou, H Zhu, YY Noh Small Structures 5 (4), 2300393, 2024 | 4 | 2024 |
| High-performance tin perovskite transistors through formate pseudohalide engineering G Park, W Yang, A Liu, H Zhu, F De Angelis, YY Noh Materials Science and Engineering: R: Reports 159, 100806, 2024 | 2 | 2024 |
| Fabrication of high-performance tin halide perovskite thin-film transistors via chemical solution-based composition engineering H Zhu, Y Reo, G Park, W Yang, A Liu, YY Noh Nature Protocols, 1-15, 2025 | | 2025 |
