| Fundamentals of power semiconductor devices BJ Baliga Springer Science & Business Media, 2010 | 3277 | 2010 |
| Comparison of 6H-SiC, 3C-SiC, and Si for power devices M Bhatnagar, BJ Baliga IEEE Transactions on electron devices 40 (3), 645-655, 2002 | 1484 | 2002 |
| Power semiconductor devices BJ Baliga (No Title), 1996 | 1440 | 1996 |
| Power semiconductor device figure of merit for high-frequency applications BJ Baliga IEEE Electron Device Letters 10 (10), 455-457, 1989 | 1438 | 1989 |
| Modern power devices J Baliga John Wiley and Sons Inc., New York, NY, 1987 | 1430 | 1987 |
| Optimum semiconductors for high-power electronics K Shenai, RS Scott, BJ Baliga IEEE transactions on Electron Devices 36 (9), 1811-1823, 1989 | 904 | 1989 |
| Silicon carbide power devices BJ Baliga World scientific, 2005 | 728 | 2005 |
| Semiconductors for high‐voltage, vertical channel field‐effect transistors BJ Baliga Journal of applied Physics 53 (3), 1759-1764, 1982 | 693 | 1982 |
| Gallium nitride devices for power electronic applications BJ Baliga Semiconductor Science and Technology 28 (7), 074011, 2013 | 685 | 2013 |
| Trends in power semiconductor devices BJ Baliga IEEE Transactions on electron Devices 43 (10), 1717-1731, 1996 | 583 | 1996 |
| Power semiconductor devices having improved high frequency switching and breakdown characteristics BJ Baliga US Patent 5,998,833, 1999 | 509 | 1999 |
| Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance BJ Baliga US Patent 5,637,898, 1997 | 407 | 1997 |
| The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device BJ Baliga, MS Adler, RP Love, PV Gray, ND Zommer IEEE Transactions on Electron devices 31 (6), 821-828, 1984 | 359 | 1984 |
| Advanced power MOSFET concepts BJ Baliga Springer Science & Business Media, 2010 | 295 | 2010 |
| The insulated gate rectifier (IGR): A new power switching device BJ Baliga, MS Adler, PV Gray, RP Love, N Zommer 1982 International Electron Devices Meeting, 264-267, 1982 | 295 | 1982 |
| Smart grid technologies J Wang, AQ Huang, W Sung, Y Liu, BJ Baliga IEEE Industrial Electronics Magazine 3 (2), 16-23, 2009 | 287 | 2009 |
| An overview of smart power technology BJ Baliga IEEE transactions on Electron Devices 38 (7), 1568-1575, 1991 | 261 | 1991 |
| Silicon carbide power MOSFET with floating field ring and floating field plate BJ Baliga US Patent 5,233,215, 1993 | 245 | 1993 |
| Schottky barrier rectifier with MOS trench M Mehrotra, BJ Baliga US Patent 5,365,102, 1994 | 244 | 1994 |
| The future of power semiconductor device technology BJ Baliga Proceedings of the IEEE 89 (6), 822-832, 2002 | 239 | 2002 |
