| Terahertz Gunn-like oscillations in InGaAs/InAlAs planar diodes S Pérez, T González, D Pardo, J Mateos Journal of applied physics 103 (9), 2008 | 96 | 2008 |
| Comparative Monte Carlo analysis of InP-and GaN-based gunn diodes S García, S Pérez, I Íñiguez-De-La-Torre, J Mateos, T González Journal of Applied Physics 115 (4), 2014 | 44 | 2014 |
| Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields S Pérez, T González, SL Delage, J Obregon Journal of applied Physics 88 (2), 800-807, 2000 | 39 | 2000 |
| Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations S García, I Íñiguez-de-la-Torre, J Mateos, T González, S Pérez Semiconductor Science and Technology 31 (6), 065005, 2016 | 38 | 2016 |
| Upconversion of partition noise in semiconductors operating under periodic large-signal conditions P Shiktorov, E Starikov, V Gružinskis, S Pérez, T González, L Reggiani, ... Physical Review B 67 (16), 165201, 2003 | 38 | 2003 |
| An assessment of available models for the design of Schottky-based multipliers up to THz frequencies D Pardo, J Grajal, CG Perez-Moreno, S Perez IEEE Transactions on Terahertz Science and Technology 4 (2), 277-287, 2014 | 36 | 2014 |
| Monte Carlo simulation of Schottky diodes operating under terahertz cyclostationary conditions P Shiktorov, E Starikov, V Gruzinskis, S Pérez, T González, L Reggiani, ... IEEE Electron Device Letters 25 (1), 1-3, 2004 | 34 | 2004 |
| Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length S García, I Iñiguez-De-La-Torre, S Pérez, J Mateos, T González Journal of Applied Physics 114 (7), 2013 | 28 | 2013 |
| Monte Carlo investigation of terahertz plasma oscillations in ultrathin layers of n-type In0. 53Ga0. 47As JF Millithaler, L Reggiani, J Pousset, L Varani, C Palermo, W Knap, ... Applied Physics Letters 92 (4), 2008 | 26 | 2008 |
| Noise in Schottky-barrier diodes: from static-to large-signal operation S Perez, P Shiktorov, T González, E Starikov, V Gruzinskis, L Reggiani, ... Noise in Devices and Circuits II 5470, 322-336, 2004 | 23 | 2004 |
| Monte Carlo simulation of threshold bandwidth for high-order harmonic extraction P Shiktorov, E Starikov, V Gruzinskis, S Pérez, T González, L Reggiani, ... IEEE Transactions on Electron Devices 50 (5), 1171-1178, 2003 | 22 | 2003 |
| GaN nanodiode arrays with improved design for zero-bias sub-THz detection H Sánchez-Martín, S Sánchez-Martín, I Íñiguez-De-La-Torre, S Pérez, ... Semiconductor Science and Technology 33 (9), 095016, 2018 | 21 | 2018 |
| Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits P Shiktorov, E Starikov, V Gružinskis, S Pérez, T González, L Reggiani, ... Semiconductor science and technology 21 (4), 550, 2006 | 21 | 2006 |
| Monte Carlo analysis of the noise behavior in Si bipolar junction transistors and SiGe heterojunction bipolar transistors at radio frequencies MJ Martin-Martinez, S Pérez, D Pardo, T González Journal of Applied Physics 90 (3), 1582-1588, 2001 | 18 | 2001 |
| Numerical modeling of TeraHertz electronic devices L Varani, C Palermo, JF Millithaler, JC Vaissiere, E Starikov, P Shiktorov, ... Journal of Computational Electronics 5, 71-77, 2006 | 17 | 2006 |
| Microscopic investigation of large-signal noise in semiconductor materials and devices T Gonzalez, S Perez, E Starikov, P Shiktorov, V Gruzinskis, L Reggiani, ... Noise in Devices and Circuits 5113, 252-266, 2003 | 17 | 2003 |
| Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes B Orfao, BG Vasallo, D Moro-Melgar, S Perez, J Mateos, T Gonzalez IEEE Transactions on Electron Devices 67 (9), 3530-3535, 2020 | 16 | 2020 |
| Monte Carlo simulation of noise in electronic devices: limitations and perspectives T Gonzalez, J Mateos, MJ Martin-Martinez, S Perez, R Rengel, ... Unsolved Problems of Noise and Fluctuations: UPoN 2002 665, 496-503, 2003 | 16 | 2003 |
| Monte Carlo analysis of the influence of dc conditions on the upconversion of generation-recombination noise in semiconductors S Pérez, T González, SL Delage, J Obregon Semiconductor science and technology 16 (2), L8, 2001 | 15 | 2001 |
| Non-linear thermal resistance model for the simulation of high power GaN-based devices S García-Sánchez, I Íñiguez-de-la-Torre, S Pérez, K Ranjan, M Agrawal, ... Semiconductor Science and Technology 36 (5), 055002, 2021 | 14 | 2021 |
Tomás GonzálezProfessor of Electronics - University of Salamanca (Spain)Dirección de correo verificada de usal.es