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Po-An Chen
Po-An Chen
Institute of Microelectronics, National Cheng Kung University, Taiwan
Dirección de correo verificada de gs.ncku.edu.tw
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Thinnest Nonvolatile Memory Based on Monolayer h‐BN
X Wu, R Ge, PA Chen, H Chou, Z Zhang, Y Zhang, S Banerjee, ...
Advanced Materials 31 (15), 1806790, 2019
2652019
Observation of single-defect memristor in an MoS 2 atomic sheet
SM Hus, R Ge, PA Chen, L Liang, GE Donnelly, W Ko, F Huang, ...
Nature Nanotechnology 16 (1), 58-62, 2021
2522021
Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches
R Ge, X Wu, M Kim, PA Chen, J Shi, J Choi, X Li, Y Zhang, MH Chiang, ...
2018 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2018
262018
All-zigzag graphene nanoribbons for planar interconnect application
PA Chen, MH Chiang, WC Hsu
Journal of Applied Physics 122 (3), 034301, 2017
102017
An RRAM with a 2D Material Embedded Double Switching Layer for Neuromorphic Computing
PA Chen, RJ Ge, JW Lee, CH Hsu, WC Hsu, D Akinwande, MH Chiang
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), 1-4, 2018
62018
Bilayer Modulation with Dual Vacancy Filaments by Intentionally Oxidized Titanium Oxide for Multilayer-hBN RRAM
PA Chen, WC Hsu, MH Chiang
IEEE Transactions on Nanotechnology, 2021
52021
Single-defect Memristor in MoS Atomic-layer
SM Hus, R Ge, PA Chen, MH Chiang, GE Donnelly, W Ko, F Huang, ...
arXiv preprint arXiv:2002.01574, 2020
22020
Gradual RESET modulation by intentionally oxidized titanium oxide for multilayer-hBN RRAM
PA Chen, WC Hsu, MH Chiang
2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), 1-5, 2019
12019
Non-Volatile Resistance Switching Phenomenon in Monolayer h-BN
X Wu, R Ge, PA Chen, MH Chiang, D Akinwande, J Lee
ECS Meeting Abstracts, 1316, 2019
2019
Simulation Based Study of Oxygen Plasma Induced Defects on Zigzag Graphene Nanoribbons
PA Chen, JW Lee, MH Chiang, WC Hsu
ECS Transactions 80 (10), 463, 2017
2017
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Artículos 1–10