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Jinwoo Park
Jinwoo Park
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4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array
S Kim, J Park, TH Kim, K Hong, Y Hwang, BG Park, H Kim
Advanced Intelligent Systems 4 (9), 2100273, 2022
552022
Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system
TH Kim, S Kim, K Hong, J Park, Y Hwang, BG Park, H Kim
Chaos, Solitons & Fractals 153, 111587, 2021
522021
3-bit multilevel operation with accurate programming scheme in tio x/al2o3 memristor crossbar array for quantized neuromorphic system
TH Kim, J Lee, S Kim, J Park, BG Park, H Kim
Nanotechnology 32 (29), 295201, 2021
362021
Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors
J Park, TH Kim, S Kim, GH Lee, H Nili, H Kim
Chaos, Solitons & Fractals 152, 111388, 2021
272021
Effect of program error in memristive neural network with weight quantization
TH Kim, S Kim, K Hong, J Park, S Youn, JH Lee, BG Park, H Kim
IEEE Transactions on Electron Devices 69 (6), 3151-3157, 2022
242022
Intrinsic variation effect in memristive neural network with weight quantization
J Park, MS Song, S Youn, TH Kim, S Kim, K Hong, H Kim
Nanotechnology 33 (37), 375203, 2022
182022
Implementation of convolutional neural networks in memristor crossbar arrays with binary activation and weight quantization
J Park, S Kim, MS Song, S Youn, K Kim, TH Kim, H Kim
ACS applied materials & interfaces 16 (1), 1054-1065, 2024
172024
Effect of weight overlap region on neuromorphic system with memristive synaptic devices
GH Lee, TH Kim, MS Song, J Park, S Kim, K Hong, Y Kim, BG Park, H Kim
Chaos, Solitons & Fractals 157, 111999, 2022
152022
Memristor Crossbar Circuit for Ternary Content‐Addressable Memory with Fine‐Tuning Operation
S Youn, S Kim, TH Kim, J Park, H Kim
Advanced Intelligent Systems, 2200325, 2023
122023
Highly reliable physical unclonable functions using memristor crossbar with tunneling conduction
J Park, TH Kim, S Kim, MS Song, S Youn, K Hong, BG Park, H Kim
2022 International Electron Devices Meeting (IEDM), 18.3. 1-18.3. 4, 2022
92022
Programmable threshold logic implementations in a memristor crossbar array
S Youn, J Lee, S Kim, J Park, K Kim, H Kim
Nano Letters 24 (12), 3581-3589, 2024
82024
Multibit, Lead‐Free Cs2SnI6 Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application
A Kumar, M Krishnaiah, J Park, D Mishra, B Dash, HB Jo, G Lee, S Youn, ...
Advanced Functional Materials, 2310780, 2024
72024
Low-fluctuation nonlinear model using incremental step pulse programming with memristive devices
GH Lee, TH Kim, S Youn, J Park, S Kim, H Kim
Chaos, Solitons & Fractals 170, 113359, 2023
72023
Fuse devices for pruning in memristive neural network
TH Kim, K Hong, S Kim, J Park, S Youn, JH Lee, BG Park, H Kim, WY Choi
IEEE Electron Device Letters 44 (3), 520-523, 2023
52023
Memristor Crossbar Array with Enhanced Device Yield for In-Memory Vector–Matrix Multiplication
TH Kim, S Kim, J Park, S Youn, H Kim
ACS Applied Electronic Materials, 2024
32024
Bias-Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source
J Park, H Kim, H Kim
Advanced Intelligent Systems, 2400648, 2025
2025
True random number generator using stochastic noise signal of memristor with variation tolerance
D Yu, S Ahn, S Youn, J Park, H Kim
Chaos, Solitons & Fractals 189, 115708, 2024
2024
Threshold learning algorithm for memristive neural network with binary switching behavior
S Youn, Y Hwang, TH Kim, S Kim, H Hwang, J Park, H Kim
Neural Networks 176, 106355, 2024
2024
Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlOx Oxidation for Neuromorphic System
S Kim, K Park, K Hong, TH Kim, J Park, S Youn, H Kim, WY Choi
Advanced Materials Technologies, 2400063, 2024
2024
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