4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array S Kim, J Park, TH Kim, K Hong, Y Hwang, BG Park, H Kim Advanced Intelligent Systems 4 (9), 2100273, 2022 | 55 | 2022 |
Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system TH Kim, S Kim, K Hong, J Park, Y Hwang, BG Park, H Kim Chaos, Solitons & Fractals 153, 111587, 2021 | 52 | 2021 |
3-bit multilevel operation with accurate programming scheme in tio x/al2o3 memristor crossbar array for quantized neuromorphic system TH Kim, J Lee, S Kim, J Park, BG Park, H Kim Nanotechnology 32 (29), 295201, 2021 | 36 | 2021 |
Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors J Park, TH Kim, S Kim, GH Lee, H Nili, H Kim Chaos, Solitons & Fractals 152, 111388, 2021 | 27 | 2021 |
Effect of program error in memristive neural network with weight quantization TH Kim, S Kim, K Hong, J Park, S Youn, JH Lee, BG Park, H Kim IEEE Transactions on Electron Devices 69 (6), 3151-3157, 2022 | 24 | 2022 |
Intrinsic variation effect in memristive neural network with weight quantization J Park, MS Song, S Youn, TH Kim, S Kim, K Hong, H Kim Nanotechnology 33 (37), 375203, 2022 | 18 | 2022 |
Implementation of convolutional neural networks in memristor crossbar arrays with binary activation and weight quantization J Park, S Kim, MS Song, S Youn, K Kim, TH Kim, H Kim ACS applied materials & interfaces 16 (1), 1054-1065, 2024 | 17 | 2024 |
Effect of weight overlap region on neuromorphic system with memristive synaptic devices GH Lee, TH Kim, MS Song, J Park, S Kim, K Hong, Y Kim, BG Park, H Kim Chaos, Solitons & Fractals 157, 111999, 2022 | 15 | 2022 |
Memristor Crossbar Circuit for Ternary Content‐Addressable Memory with Fine‐Tuning Operation S Youn, S Kim, TH Kim, J Park, H Kim Advanced Intelligent Systems, 2200325, 2023 | 12 | 2023 |
Highly reliable physical unclonable functions using memristor crossbar with tunneling conduction J Park, TH Kim, S Kim, MS Song, S Youn, K Hong, BG Park, H Kim 2022 International Electron Devices Meeting (IEDM), 18.3. 1-18.3. 4, 2022 | 9 | 2022 |
Programmable threshold logic implementations in a memristor crossbar array S Youn, J Lee, S Kim, J Park, K Kim, H Kim Nano Letters 24 (12), 3581-3589, 2024 | 8 | 2024 |
Multibit, Lead‐Free Cs2SnI6 Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application A Kumar, M Krishnaiah, J Park, D Mishra, B Dash, HB Jo, G Lee, S Youn, ... Advanced Functional Materials, 2310780, 2024 | 7 | 2024 |
Low-fluctuation nonlinear model using incremental step pulse programming with memristive devices GH Lee, TH Kim, S Youn, J Park, S Kim, H Kim Chaos, Solitons & Fractals 170, 113359, 2023 | 7 | 2023 |
Fuse devices for pruning in memristive neural network TH Kim, K Hong, S Kim, J Park, S Youn, JH Lee, BG Park, H Kim, WY Choi IEEE Electron Device Letters 44 (3), 520-523, 2023 | 5 | 2023 |
Memristor Crossbar Array with Enhanced Device Yield for In-Memory Vector–Matrix Multiplication TH Kim, S Kim, J Park, S Youn, H Kim ACS Applied Electronic Materials, 2024 | 3 | 2024 |
Bias-Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source J Park, H Kim, H Kim Advanced Intelligent Systems, 2400648, 2025 | | 2025 |
True random number generator using stochastic noise signal of memristor with variation tolerance D Yu, S Ahn, S Youn, J Park, H Kim Chaos, Solitons & Fractals 189, 115708, 2024 | | 2024 |
Threshold learning algorithm for memristive neural network with binary switching behavior S Youn, Y Hwang, TH Kim, S Kim, H Hwang, J Park, H Kim Neural Networks 176, 106355, 2024 | | 2024 |
Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlOx Oxidation for Neuromorphic System S Kim, K Park, K Hong, TH Kim, J Park, S Youn, H Kim, WY Choi Advanced Materials Technologies, 2400063, 2024 | | 2024 |