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Skotnicki T
Skotnicki T
STMicroelectronics
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The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance
T Skotnicki, JA Hutchby, TJ King, HSP Wong, F Boeuf
IEEE Circuits and Devices Magazine 21 (1), 16-26, 2005
5692005
Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
R Tauk, F Teppe, S Boubanga, D Coquillat, W Knap, YM Meziani, ...
Applied Physics Letters 89 (25), 2006
4392006
Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors
W Knap, F Teppe, Y Meziani, N Dyakonova, J Lusakowski, F Boeuf, ...
Applied Physics Letters 85 (4), 675-677, 2004
4062004
Broadband terahertz imaging with highly sensitive silicon CMOS detectors
F Schuster, D Coquillat, H Videlier, M Sakowicz, F Teppe, L Dussopt, ...
Optics express 19 (8), 7827-7832, 2011
4032011
Thermoelectricity for IoT–A review
M Haras, T Skotnicki
Nano Energy 54, 461-476, 2018
3442018
Silicon-on-Nothing (SON)-an innovative process for advanced CMOS
M Jurczak, T Skotnicki, M Paoli, B Tormen, J Martins, JL Regolini, ...
IEEE Transactions on Electron Devices 47 (11), 2179-2187, 2000
3162000
Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ...
CRC press, 2018
3032018
Innovative materials, devices, and CMOS technologies for low-power mobile multimedia
T Skotnicki, C Fenouillet-Beranger, C Gallon, F Boeuf, S Monfray, F Payet, ...
IEEE transactions on electron devices 55 (1), 96-130, 2007
2712007
Novel integration process and performances analysis of Low STandby Power (LSTP) 3D Multi-Channel CMOSFET (MCFET) on SOI with Metal/High-K Gate stack
E Bernard, T Ernst, B Guillaumot, N Vulliet, V Barral, V Maffini-Alvaro, ...
2008 Symposium on VLSI Technology, 16-17, 2008
2642008
Method for making a semiconductor device comprising a stack alternately consisting of silicon layers and dielectric material layers
T Skotnicki, M Jurczak
US Patent 6,713,356, 2004
2032004
Vibratory beam electromechanical resonator
T Skotnicki, D Dutartre, P Ribot
US Patent 6,873,088, 2005
1872005
DRAM cell with high integration density
T Skotnicki, S Monfray, C Mallardeau
US Patent 6,534,811, 2003
1812003
The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects
T Skotnicki, G Merckel, T Pedron
IEEE Electron Device Letters 9 (3), 109-112, 2002
1772002
FDSOI devices with thin BOX and ground plane integration for 32 nm node and below
C Fenouillet-Beranger, S Denorme, P Perreau, C Buj, O Faynot, F Andrieu, ...
Solid-State Electronics 53 (7), 730-734, 2009
1652009
Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling
A Cros, K Romanjek, D Fleury, S Harrison, R Cerutti, P Coronel, ...
2006 International Electron Devices Meeting, 1-4, 2006
1482006
75 nm damascene metal gate and high-k integration for advanced CMOS devices
B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ...
Digest. International Electron Devices Meeting,, 355-358, 2002
1462002
A capacitor-less DRAM cell on 75nm gate length, 16nm thin fully depleted SOI device for high density embedded memories
R Ranica, A Villaret, C Fenouillet-Beranger, P Malinge, P Mazoyer, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
1342004
SON (silicon on nothing)-a new device architecture for the ULSI era
M Jurczak, T Skotnicki, M Paoli, B Tormen, JL Regolini, C Morin, A Schiltz, ...
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 1999
1311999
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ...
2013 IEEE International Electron Devices Meeting, 9.2. 1-9.2. 4, 2013
1252013
Process for transferring a layer of strained semiconductor material
B Ghyselen, D Bensahel, T Skotnicki
US Patent 6,953,736, 2005
119*2005
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