| Artificial synapses based on multiterminal memtransistors for neuromorphic application L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ... Advanced Functional Materials 29 (25), 1901106, 2019 | 257 | 2019 |
| Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries Y Li, L Loh, S Li, L Chen, B Li, M Bosman, KW Ang Nature Electronics 4 (5), 348-356, 2021 | 186 | 2021 |
| Wafer‐scale 2D hafnium diselenide based memristor crossbar array for energy‐efficient neural network hardware S Li, ME Pam, Y Li, L Chen, YC Chien, X Fong, D Chi, KW Ang Advanced Materials 34 (25), 2103376, 2022 | 154 | 2022 |
| Self-selective multi-terminal memtransistor crossbar array for in-memory computing X Feng, S Li, SL Wong, S Tong, L Chen, P Zhang, L Wang, X Fong, D Chi, ... ACS nano 15 (1), 1764-1774, 2021 | 124 | 2021 |
| Hardware implementation of memristor-based artificial neural networks F Aguirre, A Sebastian, M Le Gallo, W Song, T Wang, JJ Yang, W Lu, ... Nature communications 15 (1), 1974, 2024 | 109 | 2024 |
| A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ... Advanced Electronic Materials 6 (6), 2000057, 2020 | 94 | 2020 |
| In‐Memory Computing using Memristor Arrays with Ultrathin 2D PdSeOx/PdSe2 Heterostructure Y Li, S Chen, Z Yu, S Li, Y Xiong, ME Pam, YW Zhang, KW Ang Advanced Materials 34 (26), 2201488, 2022 | 88 | 2022 |
| An Electronic Synapse Based on 2D Ferroelectric CuInP2S6 B Li, S Li, H Wang, L Chen, L Liu, X Feng, Y Li, J Chen, X Gong, KW Ang Advanced Electronic Materials 6 (12), 2000760, 2020 | 87 | 2020 |
| Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing S Li, B Li, X Feng, L Chen, Y Li, L Huang, X Fong, KW Ang npj 2D Materials and Applications 5 (1), 1, 2021 | 64 | 2021 |
| Technology and integration roadmap for optoelectronic memristor J Wang, N Ilyas, Y Ren, Y Ji, S Li, C Li, F Liu, D Gu, KW Ang Advanced Materials 36 (9), 2307393, 2024 | 44 | 2024 |
| Interface‐Modulated Resistive Switching in Mo‐Irradiated ReS2 for Neuromorphic Computing ME Pam, S Li, T Su, YC Chien, Y Li, YS Ang, KW Ang Advanced Materials 34 (30), 2202722, 2022 | 40 | 2022 |
| Ferroelectric memory based on two-dimensional materials for neuromorphic computing L Chen, ME Pam, S Li, KW Ang Neuromorphic Computing and Engineering 2 (2), 022001, 2022 | 38 | 2022 |
| Ultrasensitive and robust two-dimensional indium selenide flexible electronics and sensors for human motion detection L Chen, ZG Yu, D Liang, S Li, WC Tan, YW Zhang, KW Ang Nano Energy 76, 105020, 2020 | 35 | 2020 |
| Recent advances in In-memory computing: exploring memristor and memtransistor arrays with 2D materials H Zhou, S Li, KW Ang, YW Zhang Nano-Micro Letters 16 (1), 121, 2024 | 29 | 2024 |
| Enhancing Memory Window Efficiency of Ferroelectric Transistor for Neuromorphic Computing via Two‐Dimensional Materials Integration H Xiang, YC Chien, L Li, H Zheng, S Li, NT Duong, Y Shi, KW Ang Advanced Functional Materials 33 (42), 2304657, 2023 | 27 | 2023 |
| Dynamic Ferroelectric Transistor‐Based Reservoir Computing for Spatiotemporal Information Processing NT Duong, YC Chien, H Xiang, S Li, H Zheng, Y Shi, KW Ang Advanced Intelligent Systems 5 (6), 2300009, 2023 | 20 | 2023 |
| A MoS2 Hafnium Oxide Based Ferroelectric Encoder for Temporal‐Efficient Spiking Neural Network YC Chien, H Xiang, Y Shi, NT Duong, S Li, KW Ang Advanced Materials 35 (2), 2204949, 2023 | 12 | 2023 |
| Nonvolatile Logic‐in‐Memory Computing based on Solution‐Processed CuI Memristor B Li, W Wei, L Luo, M Gao, ZG Yu, S Li, KW Ang, C Zhu Advanced Electronic Materials 8 (11), 2200089, 2022 | 8 | 2022 |
| Coupled Ferroelectric‐Photonic Memory in a Retinomorphic Hardware for In‐Sensor Computing NT Duong, Y Shi, S Li, YC Chien, H Xiang, H Zheng, P Li, L Li, Y Wu, ... Advanced Science 11 (12), 2303447, 2024 | 7 | 2024 |
| Charge Carrier Mobility and Series Resistance Extraction in 2D Field‐Effect Transistors: Toward the Universal Technique YC Chien, X Feng, L Chen, KC Chang, WC Tan, S Li, L Huang, KW Ang Advanced Functional Materials 31 (41), 2105003, 2021 | 6 | 2021 |
