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Wei Feng (冯伟)
Wei Feng (冯伟)
College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University
Dirección de correo verificada de nefu.edu.cn
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Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates
PA Hu, L Wang, M Yoon, J Zhang, W Feng, X Wang, Z Wen, JC Idrobo, ...
Nano letters 13 (4), 1649-1654, 2013
8362013
Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface
W Feng, W Zheng, W Cao, PA Hu
Advanced materials 26 (38), 6587-6593, 2014
5082014
Intrinsic two-dimensional ferroelectricity with dipole locking
J Xiao, H Zhu, Y Wang, W Feng, Y Hu, A Dasgupta, Y Han, Y Wang, ...
Physical review letters 120 (22), 227601, 2018
4572018
A dual-band multilayer InSe self-powered photodetector with high performance induced by surface plasmon resonance and asymmetric Schottky junction
M Dai, H Chen, R Feng, W Feng, Y Hu, H Yang, G Liu, X Chen, J Zhang, ...
ACS nano 12 (8), 8739-8747, 2018
2552018
Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response
W Feng, JB Wu, X Li, W Zheng, X Zhou, K Xiao, W Cao, B Yang, JC Idrobo, ...
Journal of Materials Chemistry C 3 (27), 7022-7028, 2015
2432015
Synthesis of two-dimensional β-Ga 2 O 3 nanosheets for high-performance solar blind photodetectors
W Feng, X Wang, J Zhang, L Wang, W Zheng, PA Hu, W Cao, B Yang
Journal of Materials Chemistry C 2 (17), 3254-3259, 2014
2052014
Vertical 2D MoO2/MoSe2 Core–Shell Nanosheet Arrays as High‐Performance Electrocatalysts for Hydrogen Evolution Reaction
X Chen, G Liu, W Zheng, W Feng, W Cao, W Hu, PA Hu
Advanced Functional Materials 26 (46), 8537-8544, 2016
1922016
Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
P Hu, J Zhang, M Yoon, XF Qiao, X Zhang, W Feng, P Tan, W Zheng, J Liu, ...
Nano Research 7, 694-703, 2014
1822014
Sensitive Electronic-Skin Strain Sensor Array Based on the Patterned Two-Dimensional α-In2Se3
W Feng, W Zheng, F Gao, XS Chen, G Liu, T Hasan, WW Cao, PA Hu
Chemistry of Materials 28 (12), 4278-4283, 2016
1732016
Anisotropic Growth of Nonlayered CdS on MoS2 Monolayer for Functional Vertical Heterostructures
W Zheng, W Feng, X Zhang, X Chen, G Liu, Y Qiu, T Hasan, P Tan, PA Hu
Advanced Functional Materials 26 (16), 2648-2654, 2016
1412016
Colorimetric sensor based on self‐assembled Polydiacetylene/graphene‐stacked composite film for vapor‐phase volatile organic compounds
X Wang, X Sun, PA Hu, J Zhang, L Wang, W Feng, S Lei, B Yang, W Cao
Advanced Functional Materials 23 (48), 6044-6050, 2013
1372013
Performance improvement of multilayer InSe transistors with optimized metal contacts
W Feng, X Zhou, WQ Tian, W Zheng, PA Hu
Physical Chemistry Chemical Physics 17 (5), 3653-3658, 2015
1362015
Vertically aligned two-dimensional SnS 2 nanosheets with a strong photon capturing capability for efficient photoelectrochemical water splitting
G Liu, Z Li, T Hasan, X Chen, W Zheng, W Feng, D Jia, Y Zhou, PA Hu
Journal of Materials Chemistry A 5 (5), 1989-1995, 2017
1352017
High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi2O2S Nanosheets
X Yang, L Qu, F Gao, Y Hu, H Yu, Y Wang, M Cui, Y Zhang, Z Fu, Y Huang, ...
ACS Applied Materials & Interfaces 14 (5), 7175-7183, 2022
1152022
In-Plane Mosaic Potential Growth of Large-Area 2D Layered Semiconductors MoS2–MoSe2 Lateral Heterostructures and Photodetector Application
X Chen, Y Qiu, H Yang, G Liu, W Zheng, W Feng, W Cao, W Hu, PA Hu
ACS applied materials & interfaces 9 (2), 1684-1691, 2017
1122017
Low-temperature growth of large-area heteroatom-doped graphene film
J Zhang, J Li, Z Wang, X Wang, W Feng, W Zheng, W Cao, PA Hu
Chemistry of Materials 26 (7), 2460-2466, 2014
1062014
Ultralow Power Optical Synapses Based on MoS2 Layers by Indium‐Induced Surface Charge Doping for Biomimetic Eyes
Y Hu, M Dai, W Feng, X Zhang, F Gao, S Zhang, B Tan, J Zhang, Y Shuai, ...
Advanced Materials 33 (52), 2104960, 2021
972021
A fast and zero-biased photodetector based on GaTe–InSe vertical 2D p–n heterojunction
W Feng, Z Jin, J Yuan, J Zhang, S Jia, L Dong, J Yoon, L Zhou, R Vajtai, ...
2D Materials 5 (2), 025008, 2018
962018
Controlled growth of vertical 3D MoS 2 (1− x) Se 2x nanosheets for an efficient and stable hydrogen evolution reaction
X Chen, Z Wang, Y Qiu, J Zhang, G Liu, W Zheng, W Feng, W Cao, PA Hu, ...
Journal of Materials Chemistry A 4 (46), 18060-18066, 2016
832016
Boosting photoresponse of self-powered InSe-based photoelectrochemical photodetectors via suppression of interface doping
X Yang, X Liu, L Qu, F Gao, Y Xu, M Cui, H Yu, Y Wang, PA Hu, W Feng
ACS nano 16 (5), 8440-8448, 2022
782022
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