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Solomon Amsalu Chekol
Solomon Amsalu Chekol
Dirección de correo verificada de fz-juelich.de - Página principal
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Effect of the threshold kinetics on the filament relaxation behavior of Ag‐based diffusive memristors
SA Chekol, S Menzel, RW Ahmad, R Waser, S Hoffmann‐Eifert
Advanced functional materials 32 (15), 2111242, 2022
822022
3D stackable and scalable binary ovonic threshold switch devices with excellent thermal stability and low leakage current for high‐density cross‐point memory applications
J Yoo, SH Kim, SA Chekol, J Park, C Sung, J Song, D Lee, H Hwang
Advanced Electronic Materials 5 (7), 1900196, 2019
422019
AC–Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application
SA Chekol, J Yoo, J Park, J Song, C Sung, H Hwang
Nanotechnology 29 (34), 345202, 2018
392018
Self-limited CBRAM with threshold selector for 1S1R crossbar array applications
J Song, J Woo, S Lim, SA Chekol, H Hwang
IEEE Electron Device Letters 38 (11), 1532-1535, 2017
362017
Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices
J Song, J Woo, J Yoo, SA Chekol, S Lim, C Sung, H Hwang
IEEE Transactions on Electron Devices 64 (11), 4763-4767, 2017
352017
Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes
J Park, C Lee, M Kwak, SA Chekol, S Lim, M Kim, J Woo, H Hwang, D Lee
Nanotechnology 30 (30), 305202, 2019
262019
Te-based binary OTS selectors with excellent selectivity (>105), endurance (>108) and thermal stability (>450°C)
J Yoo, Y Koo, SA Chekol, J Park, J Song, H Hwang
2018 IEEE Symposium on VLSI Technology, 207-208, 2018
252018
W/WO3− x based three-terminal synapse device with linear conductance change and high on/off ratio for neuromorphic application
J Go, Y Kim, M Kwak, J Song, SA Chekol, JD Kwon, H Hwang
Applied Physics Express 12 (2), 026503, 2019
222019
An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application
SA Chekol, J Song, J Yoo, S Lim, H Hwang
Applied Physics Letters 114 (10), 2019
212019
NbO2-Based Frequency Storable Coupled Oscillators for Associative Memory Application
D Lee, E Cha, J Park, C Sung, K Moon, SA Chekol, H Hwang
IEEE Journal of the Electron Devices Society 6, 250-253, 2018
202018
Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation
SA Chekol, S Menzel, R Waser, S Hoffmann‐Eifert
Advanced Electronic Materials 8 (11), 2200549, 2022
162022
Hardware implementation of neural network using pre-programmed resistive device for pattern recognition
W Choi, K Moon, M Kwak, C Sung, J Lee, J Song, J Park, SA Chekol, ...
Solid-State Electronics 153, 79-83, 2019
142019
An ag/hfo2/pt threshold switching device with an ultra-low leakage (< 10 fa), high on/offratio (> 1011), and low threshold voltage (< 0.2 v) for energy-efficient neuromorphic …
SA Chekol, F Cüppers, R Waser, S Hoffmann-Eifert
2021 IEEE International Memory Workshop (IMW), 1-4, 2021
122021
Thermally stable Te-based binary OTS device for selector application
SA Chekol, J Yoo, H Hwang
2018 Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2018
72018
Communication—reduced off-current of NbO2 by thermal oxidation of polycrystalline Nb wire
SA Chekol, J Song, J Park, E Cha, S Lim, H Hwang
ECS Journal of Solid State Science and Technology 6 (9), P641, 2017
62017
Selector devices for emerging memories
SA Chekol, J Song, J Park, J Yoo, S Lim, H Hwang
Memristive Devices for Brain-Inspired Computing, 135-164, 2020
52020
Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory
S Lee, J Song, S Lim, SA Chekol, H Hwang
Solid-State Electronics 153, 8-11, 2019
52019
SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials
SA Chekol, R Nacke, S Aussen, S Hoffmann-Eifert
Micromachines 14 (3), 571, 2023
42023
Unveiling the relaxation dynamics of based diffusive memristors for use in neuromorphic computing
SA Chekol, R Waser, M Wuttig
Fachgruppe für Materialwissenschaft und Werkstofftechnik, 2024
2024
Controllability of Relaxation Behavior in Ag-based Diffusive Memristors
SA Chekol, R Waser, S Hoffmann-Eifert
2023 Device Research Conference (DRC), 1-2, 2023
2023
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